Toshiba Semiconductor and Storage 晶體管-FET，MOSFET-單
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展開過濾器
重置過濾器
應用過濾器
類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
制造商Toshiba Semiconductor and Storage
記錄 786
頁面 18/27
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 11A TO-220SIS |
6,552 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 500V | 11A (Ta) | 10V | 600mOhm @ 5.5A, 10V | 4V @ 1mA | 24nC @ 10V | ±30V | 1200pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 75V 60A TO-220AB |
3,526 |
|
- | N-Channel | MOSFET (Metal Oxide) | 75V | 60A | - | 9mOhm @ 30A, 10V | - | 75nC @ 10V | - | - | - | 128W | - | Through Hole | TO-220-3 | TO-220-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 7A TO-220SIS |
2,718 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Ta) | 10V | 980mOhm @ 3.5A, 10V | 4V @ 1mA | 24nC @ 10V | ±30V | 1200pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 9.3A TO-220SIS |
4,608 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 9.3A (Ta) | 10V | 500mOhm @ 4.6A, 10V | 3.5V @ 350µA | 20nC @ 10V | ±30V | 700pF @ 300V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 12A TO-220SIS |
6,606 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 450V | 12A (Ta) | 10V | 520mOhm @ 6A, 10V | 4V @ 1mA | 24nC @ 10V | ±30V | 1200pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 6.2A TO-220SIS |
3,474 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 6.2A (Ta) | 10V | 750mOhm @ 3.1A, 10V | 3.7V @ 310µA | 12nC @ 10V | ±30V | 390pF @ 300V | Super Junction | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 8A IPAK |
8,856 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 8A (Ta) | 10V | 500mOhm @ 4A, 10V | 3.7V @ 400µA | 18.5nC @ 10V | ±30V | 570pF @ 300V | Super Junction | 80W (Tc) | 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 13A TO-220AB |
6,624 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 13A (Ta) | 10V | 250mOhm @ 6.5A, 10V | 3.5V @ 1mA | 25nC @ 10V | ±20V | 1100pF @ 100V | - | 102W (Tc) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 10A TO-220SIS |
3,454 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 550V | 10A (Ta) | 10V | 720mOhm @ 5A, 10V | 4V @ 1mA | 24nC @ 10V | ±30V | 1200pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N CH 120V 72A TO-220 |
5,508 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 120V | 72A (Ta) | 10V | 4.4mOhm @ 36A, 10V | 4V @ 1mA | 130nC @ 10V | ±20V | 8100pF @ 60V | - | 255W (Tc) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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|
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 13A TO-220SIS |
3,816 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 450V | 13A (Ta) | 10V | 460mOhm @ 6.5A, 10V | 4V @ 1mA | 25nC @ 10V | ±30V | 1350pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 525V 12A TO-220SIS |
3,816 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 525V | 12A (Ta) | 10V | 580mOhm @ 6A, 10V | 4V @ 1mA | 25nC @ 10V | ±30V | 1350pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 11A TO-220SIS |
5,796 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 550V | 11A (Ta) | 10V | 630mOhm @ 5.5A, 10V | 4V @ 1mA | 25nC @ 10V | ±30V | 1350pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 8A TO-220SIS |
8,046 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 8A (Ta) | 10V | 500mOhm @ 4A, 10V | 3.7V @ 400µA | 18.5nC @ 10V | ±30V | 570pF @ 300V | Super Junction | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 11A TO-220SIS |
8,964 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Ta) | 10V | 650mOhm @ 5.5A, 10V | 4V @ 1mA | 28nC @ 10V | ±30V | 1550pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
2,736 |
|
DTMOSIV-H | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Ta) | 10V | 135mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 40nC @ 10V | ±30V | 2400pF @ 300V | - | 180W (Tc) | 150°C | Surface Mount | 4-DFN-EP (8x8) | 4-VSFN Exposed Pad |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 12.5A TO-220SIS |
8,028 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 500V | 12.5A (Ta) | 10V | 470mOhm @ 6.3A, 10V | 4V @ 1mA | 28nC @ 10V | ±30V | 1550pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 13.5A TO-220SIS |
8,226 |
|
- | N-Channel | MOSFET (Metal Oxide) | 450V | 13.5A | - | 410mOhm @ 6.8A, 10V | - | - | - | - | - | - | - | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 9.7A IPAK |
4,590 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 9.7A (Ta) | 10V | 430mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | ±30V | 700pF @ 300V | - | 80W (Tc) | 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 15.8A DTMOSIV |
3,942 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 40nC @ 10V | ±30V | 1350pF @ 300V | - | 40W (Tc) | - | Through Hole | TO-220 | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 12A TO-220SIS |
6,138 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 550V | 12A (Ta) | 10V | 570mOhm @ 6A, 10V | 4V @ 1mA | 28nC @ 10V | ±30V | 1550pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 12.5A TO-220SIS |
8,244 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 550V | 12.5A (Ta) | 10V | 480mOhm @ 6.3A, 10V | 4V @ 1mA | 38nC @ 10V | ±30V | 1800pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A I2PAK |
6,966 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 13.7A (Ta) | 10V | 250mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | ±30V | 1300pF @ 300V | - | 130W (Tc) | 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 13A TO-220SIS |
6,822 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 500V | 13A (Ta) | 10V | 400mOhm @ 6.5A, 10V | 4V @ 1mA | 38nC @ 10V | ±30V | 1800pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 14A TO-220SIS |
6,642 |
|
- | N-Channel | MOSFET (Metal Oxide) | 450V | 14A | - | 340mOhm @ 7A, 10V | - | - | - | - | - | - | - | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 11.5A TO-220 |
7,200 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 11.5A (Ta) | 10V | 300mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25nC @ 10V | ±30V | 890pF @ 300V | Super Junction | 110W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 800V TO-3PN |
2,952 |
|
π-MOSVIII | N-Channel | MOSFET (Metal Oxide) | 800V | 10A (Ta) | 10V | 1Ohm @ 5A, 10V | 4V @ 1mA | 46nC @ 10V | ±30V | 2000pF @ 25V | - | 250W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 20A 5DFN |
2,376 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 170mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | ±30V | 1680pF @ 300V | Super Junction | 156W (Tc) | 150°C (TJ) | Surface Mount | 4-DFN-EP (8x8) | 4-VSFN Exposed Pad |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 14A TO-220SIS |
3,490 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 550V | 14A (Ta) | 10V | 370mOhm @ 7A, 10V | 4V @ 1mA | 40nC @ 10V | ±30V | 2300pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A I2PAK |
3,258 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 13.7A (Ta) | 10V | 300mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40nC @ 10V | ±30V | 1300pF @ 300V | - | 130W (Tc) | 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |