Toshiba Semiconductor and Storage 晶體管-FET，MOSFET-單
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展開過濾器
重置過濾器
應用過濾器
類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
制造商Toshiba Semiconductor and Storage
記錄 786
頁面 8/27
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 150V 18A 8-SOP |
4,518 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 150V | 18A (Ta) | 10V | 33mOhm @ 9A, 10V | 4V @ 300µA | 10.6nC @ 10V | ±20V | 1100pF @ 75V | - | 1.6W (Ta), 57W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 15A 8-SOP |
7,092 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 250V | 10A (Ta) | 10V | 112mOhm @ 5A, 10V | 4V @ 300µA | 11nC @ 10V | ±20V | 1100pF @ 100V | - | 1.6W (Ta), 57W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 6.8A DPAK |
4,068 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 6.8A (Ta) | 10V | 800mOhm @ 3.4A, 10V | 3.5V @ 250µA | 15nC @ 10V | ±30V | 490pF @ 300V | - | 60W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 75V 150A SOP8 |
3,780 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 75V | 150A (Tc) | 10V | 2.6mOhm @ 50A, 10V | 4V @ 1mA | 72nC @ 10V | ±20V | 6000pF @ 37.5V | - | 142W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
6,768 |
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U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 30V | 150A (Tc) | 4.5V, 10V | - | 2.1V @ 500µA | 80nC @ 10V | ±20V | 7540pF @ 15V | - | 132W (Tc) | 175°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 45V 150A |
2,016 |
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U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 45V | 150A (Tc) | 4.5V, 10V | 1.04mOhm @ 50A, 10V | 2.4V @ 1mA | 99nC @ 10V | ±20V | 9600pF @ 22.5V | - | 960mW (Ta), 170W (Tc) | 175°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N CH 60V 32A 8-SOP ADV |
5,076 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 32A (Ta) | 6.5V, 10V | 4.6mOhm @ 16A, 10V | 4V @ 500µA | 49nC @ 10V | ±20V | 3965pF @ 30V | - | 1.6W (Ta), 63W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 16A 8-SOP |
14,706 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 60V | 16A (Ta) | 4.5V, 10V | 6.9mOhm @ 8A, 10V | 2.3V @ 1mA | 87nC @ 10V | ±20V | 7540pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A D2PAK |
20,184 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 13.7A (Ta) | 10V | 250mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | ±30V | 1300pF @ 300V | - | 130W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 200V 33A SOP8 |
8,406 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 200V | 33A (Ta) | 10V | 29mOhm @ 16.5A, 10V | 4V @ 1mA | 22nC @ 10V | ±20V | 2200pF @ 100V | - | 78W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 26A SOP8 |
3,924 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 250V | 26A (Tc) | 10V | 52mOhm @ 13A, 10V | 4V @ 1mA | 22nC @ 10V | ±20V | 2200pF @ 100V | - | 78W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
8,694 |
|
U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 45V | 300A (Tc) | 4.5V, 10V | - | 2.4V @ 1mA | 122nC @ 10V | ±20V | 9600pF @ 22.5V | - | 960mW (Ta), 170W (Tc) | 175°C | Surface Mount | 8-DSOP Advance | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 9.7A DPAK |
8,082 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 9.7A (Ta) | 10V | 430mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | ±30V | 700pF @ 300V | Super Junction | 80W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 65A D2PAK |
20,916 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 65A (Ta) | 10V | 4.5mOhm @ 32.5A, 10V | 4V @ 1mA | 81nC @ 10V | ±20V | 5400pF @ 50V | - | 156W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 20A 5DFN |
8,694 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 190mOhm @ 10A, 10V | 4.5V @ 1mA | 55nC @ 10V | ±30V | 1800pF @ 300V | - | 156W (Tc) | 150°C (TJ) | Surface Mount | 4-DFN-EP (8x8) | 4-VSFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET N CH 60V 60A SOP ADV |
8,460 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 60A (Tc) | 6.5V, 10V | 2.3mOhm @ 30A, 10V | 4V @ 1mA | 72nC @ 10V | ±20V | 6100pF @ 30V | - | 1.6W (Ta), 78W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N CH 80V 60A SOP ADV |
8,496 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 80V | 60A (Tc) | 10V | 4mOhm @ 30A, 10V | 4V @ 1mA | 59nC @ 10V | ±20V | 5300pF @ 40V | - | 1.6W (Ta), 78W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N CH 100V 60A SOP ADV |
7,578 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 60A (Tc) | 10V | 4.5mOhm @ 30A, 10V | 4V @ 1mA | 58nC @ 10V | ±20V | 5200pF @ 50V | - | 1.6W (Ta), 78W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 150A 8DSOP |
3,870 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 150A (Tc) | 4.5V, 10V | 0.85mOhm @ 50A, 10V | 2.3V @ 1mA | 74nC @ 10V | ±20V | 6900pF @ 15V | - | 800mW (Ta), 142W (Tc) | 150°C (TJ) | Surface Mount | 8-DSOP Advance | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 46A 8-SOP ADV |
19,842 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 40V | 46A (Ta) | 4.5V, 10V | 3.6mOhm @ 23A, 10V | 2.3V @ 1mA | 90nC @ 10V | ±20V | 7540pF @ 10V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 12A TO-3PN |
13,236 |
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DTMOSII | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Ta) | 10V | 400mOhm @ 6A, 10V | 5V @ 1mA | 14nC @ 10V | ±30V | 720pF @ 10V | - | 144W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 30.8A 5DFN |
2,358 |
|
DTMOSIV-H | N-Channel | MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 98mOhm @ 9.4A, 10V | 3.5V @ 1.5mA | 65nC @ 10V | ±30V | 3000pF @ 300V | Super Junction | 240W (Tc) | 150°C (TJ) | Surface Mount | 4-DFN-EP (8x8) | 4-VSFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 20A TO220SIS |
8,964 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 155mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | ±30V | 1680pF @ 300V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 15A TO-3PN |
15,540 |
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DTMOSII | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Ta) | 10V | 300mOhm @ 7.5A, 10V | 5V @ 1mA | 17nC @ 10V | ±30V | 950pF @ 10V | - | 170W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 30A TO-220 |
19,260 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 10V | 15mOhm @ 15A, 10V | 4V @ 200µA | 16nC @ 10V | ±20V | 1050pF @ 30V | - | 25W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 7A TO-220SIS |
6,426 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Ta) | 10V | 650mOhm @ 3.5A, 10V | 4.5V @ 350µA | 16nC @ 10V | ±30V | 490pF @ 300V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 900V 3A TO-220SIS |
18,096 |
|
π-MOSIV | N-Channel | MOSFET (Metal Oxide) | 900V | 3A (Ta) | 10V | 4.3Ohm @ 1.5A, 10V | 4V @ 1mA | 17nC @ 10V | ±30V | 700pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 75V 80A TO220SIS |
9,804 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 75V | 80A (Ta) | 10V | 4.5mOhm @ 40A, 10V | 4V @ 1mA | 175nC @ 10V | ±20V | 8200pF @ 10V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 100A TO3P(L) |
6,462 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 100A (Ta) | 10V | 18mOhm @ 50A, 10V | 3.7V @ 5mA | 360nC @ 10V | ±30V | 15000pF @ 30V | Super Junction | 797W (Tc) | 150°C (TJ) | Through Hole | TO-3P(L) | TO-3PL |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 7A TO220SIS |
8,496 |
|
DTMOSV | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 560mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5nC @ 10V | ±30V | 380pF @ 300V | - | 30W | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |