Infineon Technologies 晶體管-FET,MOSFET-陣列
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類別半導體 / 晶體管 / 晶體管-FET,MOSFET-陣列
制造商Infineon Technologies
記錄 393
頁面 12/14
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | FET功能 | 漏極至源極電壓(Vdss) | 電流-25°C時的連續漏極(Id) | Rds On(Max)@ Id,Vgs | Vgs(th)(最大)@ ID | 門電荷(Qg)(最大值)@ Vgs | 輸入電容(Ciss)(最大值)@ Vds | 功率-最大 | 工作溫度 | 安裝類型 | 包裝/箱 | 供應商設備包裝 |
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Infineon Technologies |
MOSFET 2P-CH 30V 1.5A TSOP-6 |
6,678 |
|
OptiMOS™ | 2 P-Channel (Dual) | Logic Level Gate | 30V | 1.5A | 150mOhm @ 1.5A, 10V | 2V @ 11µA | 2.3nC @ 5V | 282pF @ 15V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | PG-TSOP-6-6 |
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Infineon Technologies |
MOSFET 2N-CH 20V 5.4A 8DSO |
7,074 |
|
OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 20V | 5.4A | 30mOhm @ 6.5A, 4.5V | 1.2V @ 20µA | 4.9nC @ 4.5V | 730pF @ 10V | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | PG-DSO-8 |
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Infineon Technologies |
MOSFET 2N-CH 20V 0.88A SOT363 |
2,070 |
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OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 20V | 880mA | 400mOhm @ 880mA, 2.5V | 750mV @ 1.6µA | 0.26nC @ 2.5V | 78pF @ 10V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-VSSOP, SC-88, SOT-363 | PG-SOT363-6 |
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Infineon Technologies |
MOSFET 2P-CH 30V 1.5A 6TSOP |
5,328 |
|
OptiMOS™ | 2 P-Channel (Dual) | Logic Level Gate | 30V | 1.5A | 140mOhm @ 1.5A, 10V | 2V @ 6.3µA | 2.9nC @ 10V | 294pF @ 15V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | PG-TSOP-6-6 |
|
|
Infineon Technologies |
MOSFET 2N-CH 55V 15A TDSON-8 |
7,002 |
|
OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 55V | 15A | 45mOhm @ 10A, 10V | 2.2V @ 10µA | 20nC @ 10V | 1420pF @ 25V | 21W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
|
|
Infineon Technologies |
MOSFET 2N-CH 55V 20A TDSON-8 |
6,642 |
|
OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 55V | 20A | 23mOhm @ 16A, 10V | 2.2V @ 20µA | 42nC @ 10V | 2950pF @ 25V | 45W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
|
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Infineon Technologies |
MOSFET 2N-CH 55V 20A TDSON-8 |
5,814 |
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OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 55V | 20A | 35mOhm @ 11A, 10V | 2.2V @ 15µA | 23nC @ 10V | 1730pF @ 25V | 30W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
|
|
Infineon Technologies |
MOSFET 2N-CH 150V 8.7A TO-220FP |
2,484 |
|
- | 2 N-Channel (Dual) | Standard | 150V | 8.7A | 95mOhm @ 5.2A, 10V | 4.9V @ 50µA | 20nC @ 10V | 810pF @ 25V | 18W | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 Full Pack (Formed Leads) | TO-220-5 Full-Pak |
|
|
Infineon Technologies |
MOSFET 2N-CH 30V 15A DIRECTFET |
3,492 |
|
HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 15A | 6.6mOhm @ 15A, 10V | 2.35V @ 25µA | 14nC @ 4.5V | 1380pF @ 15V | 2.7W | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET™ Isometric MA | DIRECTFET™ MA |
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|
Infineon Technologies |
MOSFET 2N-CH 25V 7.8A 8TSSOP |
8,658 |
|
HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 25V | 7.8A | 11.3mOhm @ 7.8A, 10V | 2.35V @ 25µA | 9.5nC @ 4.5V | 1151pF @ 20V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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|
Infineon Technologies |
MOSFET 2N-CH 20V 10A 8-SOIC |
7,740 |
|
HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 20V | 10A | 13.4mOhm @ 10A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 960pF @ 10V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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|
Infineon Technologies |
MOSFET 2N-CH 30V 13A/28A PQFN |
4,734 |
|
HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 13A, 28A | 8.6mOhm @ 12A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | 1060pF @ 15V | 2.4W, 3.4W | -55°C ~ 150°C (TJ) | Surface Mount | 18-PowerVQFN | PQFN (5x6) |
|
|
Infineon Technologies |
MOSFET 2P-CH 30V 8A 8SOIC |
3,762 |
|
HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 30V | 8A | 21mOhm @ 8A, 10V | 2.4V @ 25µA | 39nC @ 10V | 1300pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
Infineon Technologies |
MOSFET 2N-CH 30V 15A DIRECTFET |
8,478 |
|
HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 15A | 6.6mOhm @ 15A, 10V | 2.35V @ 25µA | 14nC @ 4.5V | 1380pF @ 15V | 2.7W | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET™ Isometric MA | DIRECTFET™ MA |
|
|
Infineon Technologies |
MOSFET 2N-CH 20V 10A 8-SO |
6,984 |
|
HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 20V | 10A | 13.4mOhm @ 10A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 960pF @ 10V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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|
Infineon Technologies |
MOSFET 2P-CH 20V 2.9A 6-TSOP |
5,166 |
|
HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 20V | 2.9A | 90mOhm @ 2.9A, 4.5V | 1.2V @ 250µA | 9.6nC @ 4.5V | 650pF @ 16V | 960mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP |
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|
Infineon Technologies |
MOSFET 2P-CH 20V 2.2A 6-TSOP |
8,604 |
|
HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 20V | 2.2A | 135mOhm @ 2.2A, 4.5V | 1.2V @ 250µA | 5.4nC @ 4.5V | 320pF @ 15V | 960mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP |
|
|
Infineon Technologies |
MOSFET N/P-CH 20V 2.7A 6-TSOP |
2,376 |
|
HEXFET® | N and P-Channel | Logic Level Gate | 20V | 2.7A, 2.2A | 90mOhm @ 2.7A, 4.5V | 1.25V @ 250µA | 6nC @ 4.5V | 400pF @ 15V | 960mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP |
|
|
Infineon Technologies |
MOSFET 2N-CH 20V 2.7A 6-TSOP |
7,974 |
|
HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 20V | 2.7A | 90mOhm @ 2.7A, 4.5V | 1.25V @ 250µA | 6nC @ 4.5V | 400pF @ 15V | 960mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP |
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|
Infineon Technologies |
MOSFET N/P-CH 12V 6.3A 8-SOIC |
2,088 |
|
HEXFET® | N and P-Channel | Logic Level Gate | 12V | 6.3A, 3A | 34mOhm @ 6A, 4.5V | 1.5V @ 250µA | 8.6nC @ 4.5V | 640pF @ 9V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET N/P-CH 100V 2.1A 8-SOIC |
7,074 |
|
HEXFET® | N and P-Channel | Standard | 100V | 2.1A, 1.5A | 210mOhm @ 2.1A, 10V | 4V @ 250µA | 28nC @ 10V | 380pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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|
Infineon Technologies |
MOSFET 2N-CH 30V 4.6A 8TSSOP |
5,328 |
|
HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 4.6A | 30mOhm @ 4.6A, 10V | 2V @ 250µA | 9nC @ 4.5V | 861pF @ 25V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
|
|
Infineon Technologies |
MOSFET 2P-CH 12V 5.5A 8TSSOP |
4 |
|
HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 12V | 5.5A | 25mOhm @ 5.4A, 4.5V | 900mV @ 250µA | 22nC @ 4.5V | 1984pF @ 6V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
|
|
Infineon Technologies |
MOSFET 2P-CH 20V 3.9A 8TSSOP |
4,608 |
|
HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 20V | 3.9A | 51mOhm @ 3.7A, 4.5V | 1.2V @ 250µA | 17nC @ 4.5V | 1090pF @ 15V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
|
|
Infineon Technologies |
MOSFET 2P-CH 30V 2.3A PQFN |
3,618 |
|
HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 30V | 2.3A | 170mOhm @ 3.1A, 10V | 2.4V @ 10µA | 3.7nC @ 10V | 160pF @ 25V | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | 6-PowerVDFN | 6-PQFN Dual (2x2) |
|
|
Infineon Technologies |
MOSFET 2N-CH 20V 4.5A PQFN |
4,086 |
|
HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 20V | 4.5A | 45mOhm @ 3.4A, 4.5V | 1.1V @ 10µA | 3.1nC @ 4.5V | 310pF @ 10V | 1.5W | -55°C ~ 150°C (TJ) | Surface Mount | 6-PowerVDFN | 6-PQFN Dual (2x2) |
|
|
Infineon Technologies |
MOSFET N/P-CH 55V 4.7/3.4A 8SOIC |
3,348 |
|
HEXFET® | N and P-Channel | Logic Level Gate | 55V | 4.7A, 3.4A | 50mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
Infineon Technologies |
MOSFET 2N-CH 30V 15A DIRECTFET |
5,166 |
|
HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 15A | 6.6mOhm @ 15A, 10V | 2.35V @ 25µA | 14nC @ 4.5V | 1380pF @ 15V | 2.7W | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET™ Isometric MA | DIRECTFET™ MA |
|
|
Infineon Technologies |
MOSFET 2N-CH 30V 15A DIRECTFET |
3,942 |
|
HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 15A | 6.6mOhm @ 15A, 10V | 2.35V @ 25µA | 14nC @ 4.5V | 1380pF @ 15V | 2.7W | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET™ Isometric MA | DIRECTFET™ MA |
|
|
Infineon Technologies |
MOSFET 2P-CH 30V 9.2A 8SOIC |
3,744 |
|
HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 30V | 9.2A | 16.3mOhm @ 9.2A, 10V | 2.4V @ 25µA | 38nC @ 10V | 1740pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |