晶體管-FET，MOSFET-陣列
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-陣列
記錄 3,829
頁面 119/128
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | FET功能 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | 輸入電容（Ciss）（最大值）@ Vds | 功率-最大 | 工作溫度 | 安裝類型 | 包裝/箱 | 供應商設備包裝 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
MOSFET 2N-CH 1200V 131A D3 |
3,490 |
|
- | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 131A (Tc) | 20mOhm @ 100A, 20V | 2.2V @ 5mA (Typ) | 246nC @ 20V | 4750pF @ 1000V | 625W | -40°C ~ 150°C (TJ) | Chassis Mount | D-3 Module | D3 |
|
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|
Microsemi |
MOSFET 2N-CH 1200V 55A SP1 |
5,562 |
|
- | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 55A (Tc) | 49mOhm @ 40A, 20V | 2.2V @ 2mA (Typ) | 98nC @ 20V | 1900pF @ 1000V | 250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
|
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|
Microsemi |
MOSFET 6N-CH 1200V 78A SP6-P |
3,420 |
|
- | 6 N-Channel (3-Phase Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 78A (Tc) | 33mOhm @ 60A, 20V | 2.2V @ 3mA (Typ) | 148nC @ 20V | 2850pF @ 1000V | 370W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6-P |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 25V 25A 24PQFN |
8,226 |
|
HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 25V | 25A | 3.4mOhm @ 25A, 10V | 2.1V @ 35µA | 15nC @ 4.5V | 1321pF @ 13V | 25W, 28W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | Dual PQFN (5x4) |
|
|
|
ON Semiconductor |
MOSFET N-CH 24V 8A ECH8 |
4,068 |
|
- | 2 N-Channel (Dual) Common Drain | Logic Level Gate, 2.5V Drive | 24V | 8A (Ta) | 23mOhm @ 4A, 4.5V | 1.3V @ 1mA | 7.5nC @ 4.5V | - | - | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 8-ECH |
|
|
|
ON Semiconductor |
MOSFET N/P-CH 60V 3A/2.5A VEC8 |
6,048 |
|
- | N and P-Channel | Logic Level Gate | 60V | 3A, 2.5A | 80mOhm @ 1.5A, 10V | 2.6V @ 1mA | 10nC @ 10V | 505pF @ 20V | 1W | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | SOT-28FL/VEC8 |
|
|
|
Diodes Incorporated |
MOSFET N/P-CH 12V 6UDFN |
26,570 |
|
- | N and P-Channel | Standard | 12V | 5.6A, 3.8A | 29mOhm @ 5A, 4.5V | 1V @ 250µA | 19.6nC @ 8V | 914pF @ 6V | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) |
|
|
|
Diodes Incorporated |
MOSFET 2N-CH 20V 4.7A 6UDFN |
4,140 |
|
- | 2 N-Channel (Dual) | Standard | 20V | 4.7A | 40mOhm @ 4.2A, 4.5V | 1.4V @ 250µA | 15nC @ 8V | 713pF @ 10V | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) |
|
|
|
Diodes Incorporated |
MOSFET 2P-CH 20V 3.2A 6UDFN |
4,050 |
|
- | 2 P-Channel (Dual) | Standard | 20V | 3.2A | 90mOhm @ 2.9A, 4.5V | 1.4V @ 250µA | 18nC @ 8V | 881pF @ 10V | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) |
|
|
|
Diodes Incorporated |
MOSFET 2P-CH 20V 3.2A 6UDFN |
7,758 |
|
- | 2 P-Channel (Dual) | Standard | 20V | 3.2A | 90mOhm @ 2.9A, 4.5V | 1.4V @ 250µA | 18nC @ 8V | 881pF @ 10V | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) |
|
|
|
Renesas Electronics America |
MOSFET 2N-CH 12V |
3,420 |
|
- | 2 N-Channel (Dual) Common Drain | Logic Level Gate, 2.5V Drive | - | - | - | - | 20nC @ 4V | - | 1.8W | 150°C (TJ) | Surface Mount | 6-XFLGA | 6-EFLIP-LGA (2.17x1.47) |
|
|
|
Trinamic Motion Control GmbH |
MOSFET N/P-CH 30V 8PQFN |
8,550 |
|
- | N and P-Channel, Common Drain | Standard | 30V | 7.3A, 5.3A | 30mOhm @ 4A, 10V | 3V @ 250µA | 7.2nC @ 4.5V | 400pF @ 25V | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (3x3) |
|
|
|
Trinamic Motion Control GmbH |
MOSFET 2N/2P-CH 30V 8SOIC |
2,268 |
|
- | 2 N and 2 P-Channel (H-Bridge) | Standard | 30V | 5.5A, 4.1A | 33mOhm @ 5A, 10V | 3V @ 250µA | 10nC @ 4.5V | 960pF @ 25V | 1.38W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Trinamic Motion Control GmbH |
MOSFET N/P-CH 40V 8PQFN |
8,352 |
|
- | N and P-Channel | Standard | 40V | 8.8A, 7.3A | 26.5mOhm @ 7A, 10V | 3V @ 250µA | 11.2nC @ 4.5V | 1050pF @ 15V | 3.57W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PQFN (5x6) |
|
|
|
Trinamic Motion Control GmbH |
MOSFET N/P-CH 60V TO252-4 |
3,366 |
|
- | N and P-Channel, Common Drain | Standard | 60V | 6.6A, 4.7A | 36mOhm @ 6A, 10V | 3V @ 250µA | 19.2nC @ 4.5V | 1560pF @ 25V | 3.13W | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-5, DPak (4 Leads + Tab), TO-252AD | TO-252-4L |
|
|
|
ON Semiconductor |
MOSFET 2N-CH 30V 8DFN |
3,294 |
|
- | 2 N-Channel (Dual) Asymmetrical | Standard | 30V | 15.4A, 29.7A | 3mOhm @ 20A, 10V | 2.1V @ 250µA | 32nC @ 10V | 1960pF @ 15V | 1.13W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) |
|
|
|
ON Semiconductor |
MOSFET 2N-CH 30V 8DFN |
7,488 |
|
- | 2 N-Channel (Dual) Asymmetrical | Standard | 30V | 11.3A, 18.1A | 5.4mOhm @ 30A, 10V | 2.2V @ 250µA | 22.2nC @ 10V | 1153pF @ 15V | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) |
|
|
|
ON Semiconductor |
MOSFET 2N-CH 30V 8DFN |
3,472 |
|
- | 2 N-Channel (Dual) Asymmetrical | Standard | 30V | 11.7A, 14.9A | 5.4mOhm @ 30A, 10V | 2.2V @ 250µA | 22.2nC @ 10V | 1252pF @ 15V | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) |
|
|
|
ON Semiconductor |
MOSFET 2N-CH 30V 8DFN |
5,706 |
|
- | 2 N-Channel (Dual) Asymmetrical | Standard | 30V | 11.7A, 14.2A | 5.4mOhm @ 10A, 10V | 2.2V @ 250µA | 22.2nC @ 10V | 1252pF @ 15V | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) |
|
|
|
ON Semiconductor |
MOSFET 2N-CH 40V 14A DPAK |
4,680 |
|
- | 2 N-Channel (Dual) Common Drain | Standard | 40V | 14A | 10mOhm @ 50A, 10V | 2.5V @ 250µA | 41nC @ 10V | 2103pF @ 25V | 3.8W | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-5, DPak (4 Leads + Tab), TO-252AD | D-Pak 5-Lead |
|
|
|
ON Semiconductor |
MOSFET 2N-CH 12V 11A EMH8 |
6,876 |
|
- | 2 N-Channel (Dual) Common Drain | Logic Level Gate, 2.5V Drive | 12V | 11A | 10mOhm @ 5A, 4.5V | 1.3V @ 1mA | 16nC @ 4.5V | - | 1.3W | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | SOT-383FL, EMH8 |
|
|
|
ON Semiconductor |
MOSFET 2P-CH 20V 5A ECH8 |
8,064 |
|
* | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-SMD, Flat Lead | 8-ECH |
|
|
|
ON Semiconductor |
MOSFET 2N-CH 12V 6A CSP4 |
2,880 |
|
* | - | - | - | - | - | - | - | - | - | - | Surface Mount | 4-XFBGA | - |
|
|
|
ON Semiconductor |
MOSFET 2P-CH 20V 3A EMH8 |
2,358 |
|
- | 2 P-Channel (Dual) | Logic Level Gate, 1.8V Drive | 20V | 3A | 85mOhm @ 3A, 4.5V | - | 4nC @ 4.5V | 320pF @ 10V | 1W | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 8-EMH |
|
|
|
ON Semiconductor |
MOSFET 2P-CH 50V 0.14A MCPH6 |
2,862 |
|
- | 2 P-Channel (Dual) | Logic Level Gate, 4V Drive | 50V | 140mA | 22Ohm @ 40mA, 10V | - | 1.32nC @ 10V | 6.2pF @ 10V | 800mW | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | 6-MCPH |
|
|
|
ON Semiconductor |
MOSFET PCH DUAL MCPH6 |
6,444 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
ON Semiconductor |
MOSFET 2N-CH 30V 8DFN |
6,264 |
|
- | 2 N-Channel (Dual) Asymmetrical | Standard | 30V | 11.7A, 14.9A | 5.4mOhm @ 30A, 10V | 2.2V @ 250µA | 22.2nC @ 10V | 1252pF @ 15V | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) |
|
|
|
ON Semiconductor |
MOSFET 2N-CH 30V 8DFN |
7,866 |
|
- | 2 N-Channel (Dual) Asymmetrical | Standard | 30V | 11.7A, 14.2A | 5.4mOhm @ 10A, 10V | 2.2V @ 250µA | 22.2nC @ 10V | 1252pF @ 15V | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) |
|
|
|
ON Semiconductor |
MOSFET 2P-CH 20V 0.43A SOT563 |
3,526 |
|
- | 2 P-Channel (Dual) | Standard | 20V | 430mA | 900mOhm @ 430mA, 4.5V | 1V @ 250µA | 2.5nC @ 4.5V | 175pF @ 16V | 250mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563-6 |
|
|
|
ON Semiconductor |
MOSFET 2N-CH 20V 0.54A SOT563 |
7,542 |
|
- | 2 N-Channel (Dual) | Standard | 20V | 540mA | 550mOhm @ 540mA, 4.5V | 1V @ 250µA | 2.5nC @ 4.5V | 150pF @ 16V | 250mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563-6 |