晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 107/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 200V 84A TO220 |
23,850 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 84A (Tc) | 10V | 12mOhm @ 84A, 10V | 4V @ 270µA | 87nC @ 10V | ±20V | 6650pF @ 100V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 900V 15A TO-247 |
18,888 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 15A (Tc) | 10V | 340mOhm @ 9.2A, 10V | 3.5V @ 1mA | 94nC @ 10V | ±20V | 2400pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH TO220-3 |
7,728 |
|
CoolMOS™ CFD7 | N-Channel | MOSFET (Metal Oxide) | 650V | 31A (Tc) | 10V | 70mOhm @ 15.1A, 10V | 4.5V @ 760µA | 67nC @ 10V | ±20V | 2721pF @ 400V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
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|
IXYS |
MOSFET N-CH 500V 42A TO247 |
18,666 |
|
HiPerFET™, PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 500V | 42A (Tc) | 10V | 145mOhm @ 500mA, 10V | 4.5V @ 4mA | 92nC @ 10V | ±30V | 5300pF @ 25V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 250V 61A TO220 |
8,436 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 250V | 61A (Tc) | 10V | 22mOhm @ 61A, 10V | 4V @ 270µA | 86nC @ 10V | ±20V | 7076pF @ 125V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
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|
STMicroelectronics |
MOSFET N-CH 300V 42A TO247 |
16,020 |
|
STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 300V | 42A (Tc) | 10V | 75mOhm @ 17A, 10V | 4V @ 250µA | 90nC @ 10V | ±20V | 3200pF @ 25V | - | 300W (Tc) | 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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|
IXYS |
MOSFET N-CH 250V 110A TO-247 |
6,924 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 110A (Tc) | 10V | 24mOhm @ 55A, 10V | 4.5V @ 1mA | 157nC @ 10V | ±20V | 9400pF @ 25V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
|
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|
Infineon Technologies |
MOSFET N-CH 75V 195A TO-247AC |
20,880 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 195A (Tc) | 10V | 1.85mOhm @ 195A, 10V | 4V @ 250µA | 570nC @ 10V | ±20V | 19230pF @ 50V | - | 520W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
|
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|
Infineon Technologies |
MOSFET N-CH 300V 70A TO-247AC |
22,668 |
|
- | N-Channel | MOSFET (Metal Oxide) | 300V | 70A (Tc) | 10V | 32mOhm @ 42A, 10V | 5V @ 250µA | 270nC @ 10V | ±20V | 10774pF @ 50V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
|
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STMicroelectronics |
MOSFET N-CH 800V 17A TO-220 |
7,980 |
|
MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 800V | 17A (Tc) | 10V | 295mOhm @ 8.5A, 10V | 5V @ 250µA | 70nC @ 10V | ±30V | 2070pF @ 50V | - | 190W (Tc) | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V 53.5A TO247-3 |
8,460 |
|
CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 53.5A (Tc) | 10V | 70mOhm @ 20.6A, 10V | 4.5V @ 1.72mA | 100nC @ 10V | ±20V | 4750pF @ 100V | - | 391W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
|
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Cree/Wolfspeed |
MOSFET N-CH 900V 22A |
17,316 |
|
C3M™ | N-Channel | SiCFET (Silicon Carbide) | 900V | 22A (Tc) | 15V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | 17.3nC @ 15V | +18V, -8V | 350pF @ 600V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
|
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STMicroelectronics |
MOSFET N-CH 900V 18.5A TO-220FP |
18,834 |
|
SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 900V | 18.5A (Tc) | 10V | 299mOhm @ 9A, 10V | 5V @ 100µA | 43nC @ 10V | ±30V | 1645pF @ 100V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 500V 21A TO-247 |
18,336 |
|
MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 500V | 21A (Tc) | 10V | 158mOhm @ 10.5A, 10V | 4V @ 250µA | 50nC @ 10V | ±25V | 1735pF @ 25V | - | 150W (Tc) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 500V 44A TO-247 |
21,228 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 44A (Tc) | 10V | 120mOhm @ 22A, 10V | 4V @ 250µA | 108nC @ 10V | ±30V | 5335pF @ 25V | - | 750W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 950V 17.5A TO-220FP |
19,488 |
|
SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 950V | 17.5A (Tc) | 10V | 330mOhm @ 9A, 10V | 5V @ 100µA | 40nC @ 10V | ±30V | 1500pF @ 100V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 600V 20A TO-220F |
14,886 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 165mOhm @ 10A, 10V | 4V @ 250µA | 60nC @ 10V | ±30V | 1800pF @ 50V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 900V 18.5A TO-220 |
17,172 |
|
SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 900V | 18.5A (Tc) | 10V | 299mOhm @ 9A, 10V | 5V @ 100µA | 43nC @ 10V | ±30V | 1645pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V 20A TO-247 |
9,612 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 165mOhm @ 10A, 10V | 4V @ 250µA | 60nC @ 10V | ±30V | 1800pF @ 50V | - | 140W (Tc) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
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IXYS |
MOSFET N-CH 500V 36A TO-247 |
7,668 |
|
HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 500V | 36A (Tc) | 10V | 170mOhm @ 500mA, 10V | 5V @ 4mA | 93nC @ 10V | ±30V | 5500pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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|
IXYS |
MOSFET N-CH 500V 60A TO247 |
18,432 |
|
HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 500V | 60A (Tc) | 10V | 100mOhm @ 30A, 10V | 5V @ 4mA | 96nC @ 10V | ±30V | 6250pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
|
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STMicroelectronics |
MOSFET N-CH 650V 35A TO220 |
29,430 |
|
MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 35A (Tc) | 10V | 78mOhm @ 19.5A, 10V | 5V @ 250µA | 91nC @ 10V | ±25V | 3375pF @ 100V | - | 210W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 200V 182A TO247AC |
8,292 |
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StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 182A (Tc) | 10V | 6.6mOhm @ 82A, 10V | 4V @ 270µA | 203nC @ 10V | ±20V | 9820pF @ 50V | - | 556W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
TRENCH_MOSFETS |
9,300 |
|
StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | - | 6V, 10V | 1.28mOhm @ 100A, 10V | 3.8V @ 278µA | 555nC @ 10V | ±20V | 25000pF @ 50V | - | 556W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
|
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STMicroelectronics |
MOSFET N-CH 600V 29A TO-220 |
13,062 |
|
MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 29A (Tc) | 10V | 105mOhm @ 14.5A, 10V | 4V @ 250µA | 80nC @ 10V | ±25V | 2722pF @ 100V | - | 250W (Tc) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
|
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Infineon Technologies |
MOSFET N-CH TO220-3 |
9,564 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 300V | 44A (Tc) | 10V | 41mOhm @ 44A, 10V | 4V @ 270µA | 87nC @ 10V | ±20V | 7180pF @ 100V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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|
|
STMicroelectronics |
MOSFET N CH 550V 33A TO-220 |
8,664 |
|
MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 550V | 33A (Tc) | 10V | 80mOhm @ 16.5A, 10V | 5V @ 250µA | 62nC @ 10V | ±25V | 2670pF @ 100V | - | 190W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
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|
IXYS |
MOSFET N-CH 500V 15A TO-247 |
6,072 |
|
Linear L2™ | N-Channel | MOSFET (Metal Oxide) | 500V | 15A (Tc) | 10V | 480mOhm @ 7.5A, 10V | 4.5V @ 250µA | 123nC @ 10V | ±20V | 4080pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
|
|
|
ON Semiconductor |
MOSFET N-CH 600V 47A TO-247 |
9,300 |
|
SuperFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 70mOhm @ 23.5A, 10V | 5V @ 250µA | 270nC @ 10V | ±30V | 8000pF @ 25V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
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Vishay Siliconix |
MOSFET N-CH 600V 27A TO-247AC |
90,954 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 27A (Tc) | 10V | 220mOhm @ 16A, 10V | 5V @ 250µA | 180nC @ 10V | ±30V | 4660pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |