晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 138/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CH 60V 30A TO220FP |
7,800 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 4V, 5V | 28mOhm @ 18A, 5V | 2V @ 250µA | 66nC @ 5V | ±10V | 3300pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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IXYS |
MOSFET N-CH 100V 80A TO-263 |
14,964 |
|
TrenchMV™ | N-Channel | MOSFET (Metal Oxide) | 100V | 80A (Tc) | 10V | 14mOhm @ 25A, 10V | 5V @ 100µA | 60nC @ 10V | ±20V | 3040pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Vishay Siliconix |
MOSFET N-CH 60V 90A TO220AB |
20,532 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 10V | 6mOhm @ 20A, 10V | 4.5V @ 250µA | 120nC @ 10V | ±20V | 4700pF @ 30V | - | 3.75W (Ta), 272W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
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ON Semiconductor |
MOSFET N-CH 600V 16A TO-220F |
19,836 |
|
SuperFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 260mOhm @ 8A, 10V | 5V @ 250µA | 70nC @ 10V | ±30V | 2250pF @ 25V | - | 37.9W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
|
|
|
Infineon Technologies |
MOSFET N-CH 150V 51A TO-220AB |
15,732 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 51A (Tc) | 10V | 32mOhm @ 36A, 10V | 5V @ 250µA | 89nC @ 10V | ±30V | 2770pF @ 25V | - | 3.8W (Ta), 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
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|
Vishay Siliconix |
MOSFET N-CH 600V 2.5A TO220FP |
26,508 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 2.5A (Tc) | 10V | 2.2Ohm @ 1.5A, 10V | 4V @ 250µA | 31nC @ 10V | ±20V | 660pF @ 25V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
|
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|
ON Semiconductor |
MOSFET N-CH 300V 21A TO-220 |
12,156 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 300V | 21A (Tc) | 10V | 160mOhm @ 10.5A, 10V | 5V @ 250µA | 60nC @ 10V | ±30V | 2200pF @ 25V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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|
Infineon Technologies |
MOSFET N-CH 800V TO-220-3 |
14,592 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 16.7A (Tc) | 10V | 310mOhm @ 11A, 10V | 3.9V @ 1mA | 91nC @ 10V | ±20V | 2320pF @ 100V | - | 35W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
|
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Vishay Siliconix |
MOSFET N-CH 600V 10A POWERPAKSO |
16,638 |
|
E | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 360mOhm @ 5A, 10V | 4.5V @ 250µA | 50nC @ 10V | ±30V | 784pF @ 100V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | 8-PowerTDFN |
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|
Infineon Technologies |
MOSFET N-CH 800V 17A TO220 |
13,584 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 17A (Tc) | 10V | 280mOhm @ 7.2A, 10V | 3.5V @ 360µA | 36nC @ 10V | ±20V | 1200pF @ 500V | Super Junction | 101W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
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Vishay Siliconix |
MOSFET N-CH 1000V 3.1A TO-247AC |
8,736 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1000V | 3.1A (Tc) | 10V | 5Ohm @ 1.9A, 10V | 4V @ 250µA | 80nC @ 10V | ±20V | 980pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
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ON Semiconductor |
MOSFET N-CH 300V TO-3 |
22,554 |
|
UniFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 38A (Tc) | 10V | 85mOhm @ 19A, 10V | 5V @ 250µA | 60nC @ 10V | ±30V | 2600pF @ 25V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
|
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Vishay Siliconix |
MOSFET N-CH 200V 78.5A TO220AB |
13,770 |
|
Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 78.5A (Tc) | 10V | 15.3mOhm @ 20A, 10V | 3.5V @ 250µA | 85nC @ 10V | ±20V | 4200pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 170A D2PAK |
19,434 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 170A (Tc) | 10V | 3.6mOhm @ 130A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 5890pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 180A TO-220AB |
15,132 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 170A (Tc) | 10V | 4.5mOhm @ 75A, 10V | 4V @ 250µA | 260nC @ 10V | ±20V | 7600pF @ 50V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 120A |
29,736 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 2.4mOhm @ 100A, 10V | 4V @ 196µA | 275nC @ 10V | ±20V | 23000pF @ 30V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Nexperia |
MOSFET N-CH 100V 120A TO220AB |
28,986 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 5mOhm @ 25A, 10V | 4V @ 1mA | 170nC @ 10V | ±20V | 9900pF @ 50V | - | 338W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 210A TO-220AB |
24,084 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 210A (Tc) | 7V, 10V | 2.8mOhm @ 76A, 10V | 4V @ 250µA | 209nC @ 10V | ±20V | 8250pF @ 25V | - | 3.8W (Ta), 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
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Infineon Technologies |
MOSFET N-CH 600V 20.2A TO247 |
7,944 |
|
CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 20.2A (Tc) | 10V | 190mOhm @ 7.6A, 10V | 4.5V @ 630µ | 11nC @ 10V | ±20V | 1750pF @ 100V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
|
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Vishay Siliconix |
MOSFET N-CH 600V 6.8A TO-247AC |
11,964 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 6.8A (Tc) | 10V | 1.2Ohm @ 4.1A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 1300pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
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Vishay Siliconix |
MOSFET N-CH 400V 10A TO-220AB |
9,312 |
|
- | N-Channel | MOSFET (Metal Oxide) | 400V | 10A (Tc) | 10V | 550mOhm @ 6A, 10V | 4V @ 250µA | 39nC @ 10V | ±30V | 1100pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Rohm Semiconductor |
MOSFET N-CH 600V 20A TO220 |
9,624 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 196mOhm @ 10A, 10V | 4V @ 1mA | 60nC @ 10V | ±20V | 1400pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
|
|
|
Infineon Technologies |
MOSFET N-CH 150V 43A TO-247AC |
24,096 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 43A (Tc) | 10V | 42mOhm @ 22A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 2400pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Nexperia |
MOSFET N-CH 40V 150A SOT78 |
37,320 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 150A (Tc) | 4.5V, 10V | 1.7mOhm @ 25A, 10V | 2.1V @ 1mA | 120nC @ 5V | ±20V | 13200pF @ 25V | - | 349W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
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Vishay Siliconix |
MOSFET N-CH 400V 25A TO-220AB |
24,066 |
|
- | N-Channel | MOSFET (Metal Oxide) | 400V | 25A (Tc) | 10V | 170mOhm @ 13A, 10V | 5V @ 250µA | 88nC @ 10V | ±30V | 1707pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
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ON Semiconductor |
MOSFET N-CH 600V 10.8A TO220F |
20,820 |
|
SuperMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 10.8A (Tc) | 10V | 299mOhm @ 5.4A, 10V | 4V @ 250µA | 35.6nC @ 10V | ±30V | 1505pF @ 100V | - | 32.1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 72A TO-247AC |
8,268 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 72A (Tc) | 10V | 14mOhm @ 45A, 10V | 5.5V @ 250µA | 170nC @ 10V | ±20V | 6160pF @ 25V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
|
|
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Vishay Siliconix |
MOSFET N-CH 100V 120A TO220AB |
6,372 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 7.5V, 10V | 4mOhm @ 20A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 5100pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
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Infineon Technologies |
MOSFET N-CH 650V 12A TO-220 |
14,022 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 250mOhm @ 7.8A, 10V | 3.5V @ 440µA | 35nC @ 10V | ±20V | 1200pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
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Infineon Technologies |
MOSFET N-CH 650V 17.5A TO220 |
51,906 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 17.5A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 4.5V @ 730µA | 68nC @ 10V | ±20V | 1850pF @ 100V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |