晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 170/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CH 300V 10A TO252AA |
17,058 |
|
Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 300V | 10A (Tc) | 10V | 330mOhm @ 14A, 10V | 4.4V @ 250µA | 47nC @ 10V | ±30V | 2190pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 12A SO-8FL |
13,032 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta), 130A (Tc) | 4.5V, 11.5V | 3.5mOhm @ 30A, 10V | 2.5V @ 250µA | 52nC @ 11.5V | ±20V | 3100pF @ 12V | - | 890mW (Ta), 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Vishay Siliconix |
MOSFET N-CH 40V 50A TO252AA |
47,916 |
|
Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 10V | 5.6mOhm @ 20A, 10V | 3.5V @ 250µA | 85nC @ 10V | ±20V | 4000pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 60V 5.1A DPAK |
24,672 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 5.1A (Tc) | 10V | 500mOhm @ 3.1A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 270pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET COOLMOS 700V TO251-3 |
14,940 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 4A (Tc) | 10V | 1.4Ohm @ 700mA, 10V | 3.5V @ 40µA | 4.7nC @ 400V | ±16V | 158pF @ 400V | - | 22.7W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Rohm Semiconductor |
RD3H200SNFRA IS THE HIGH RELIABI |
25,380 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 45V | 20A (Ta) | 4V, 10V | 28mOhm @ 20A, 10V | 2.5V @ 1mA | 12nC @ 5V | ±20V | 950pF @ 10V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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|
Vishay Siliconix |
MOSFET N-CH 20V PPAK 1212-8SH |
53,154 |
|
TrenchFET® Gen II | N-Channel | MOSFET (Metal Oxide) | 20V | 13.5A (Ta) | 4.5V, 10V | 5.3mOhm @ 21.1A, 10V | 2.5V @ 250µA | 21nC @ 4.5V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8SH | PowerPAK® 1212-8SH |
|
|
|
Infineon Technologies |
MOSFET COOLMOS 700V TO251-3 |
17,448 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 6A (Tc) | 10V | 900mOhm @ 1.1A, 10V | 3.5V @ 60µA | 6.8nC @ 400V | ±16V | 211pF @ 400V | - | 30.5W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Rohm Semiconductor |
RD3G500GN IS THE LOW ON - RESIST |
25,344 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 4.9mOhm @ 50A, 10V | 2.5V @ 1mA | 31nC @ 10V | ±20V | 22800pF @ 20V | - | 35W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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|
Vishay Siliconix |
MOSFET N-CH 200V 4.8A DPAK |
28,908 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 4.8A (Tc) | 10V | 800mOhm @ 2.9A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 260pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Toshiba Semiconductor and Storage |
MOSFET N-CHANNEL 60V 58A DPAK |
24,642 |
|
U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 60V | 58A (Tc) | 4.5V, 10V | 4.4mOhm @ 29A, 10V | 2.5V @ 500µA | 48.2nC @ 10V | ±20V | 3280pF @ 30V | - | 87W (Tc) | 175°C | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Vishay Siliconix |
MOSFET N-CH 60V 7.7A DPAK |
26,538 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 7.7A (Tc) | 10V | 200mOhm @ 4.6A, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 300pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 30V 8A PWRFLAT3.3SQ |
93,576 |
|
STripFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 8A (Tc) | 4.5V, 10V | 15mOhm @ 4A, 10V | 2.5V @ 250µA | 12nC @ 4.5V | ±18V | 965pF @ 25V | - | 2W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (3.3x3.3) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CHANNEL 700V 4A IPAK |
17,412 |
|
- | N-Channel | MOSFET (Metal Oxide) | 700V | 4A (Tc) | 10V | 2Ohm @ 1A, 10V | 3.5V @ 70µA | 7.8nC @ 10V | ±20V | 163pF @ 100V | - | 42W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Taiwan Semiconductor Corporation |
MOSFET SINGLE N-CHANNEL TRENCH |
36,324 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 16A (Ta), 107A (Tc) | 4.5V, 10V | 4.8mOhm @ 16A, 10V | 2.5V @ 250µA | 105nC @ 10V | ±20V | 6253pF @ 30V | - | 3.1W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET SINGLE N-CHANNEL TRENCH |
24,270 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 24A (Ta), 161A (Tc) | 10V | 2.5mOhm @ 24A, 10V | 4V @ 250µA | 113nC @ 10V | ±20V | 7150pF @ 20V | - | 3.1W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET SINGLE N-CHANNEL TRENCH |
23,988 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 24A (Ta), 161A (Tc) | 4.5V, 10V | 2.5mOhm @ 24A, 10V | 2.5V @ 250µA | 112nC @ 10V | ±20V | 6435pF @ 20V | - | 3.1W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
|
|
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Taiwan Semiconductor Corporation |
MOSFET SINGLE N-CHANNEL TRENCH |
24,750 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 16A (Ta), 104A (Tc) | 10V | 5mOhm @ 16A, 10V | 4V @ 250µA | 104nC @ 10V | ±20V | 6870pF @ 30V | - | 3.1W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
|
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Microchip Technology |
MOSFET N-CH 350V 0.23A SOT89-3 |
21,540 |
|
- | N-Channel | MOSFET (Metal Oxide) | 350V | 230mA (Tj) | 3V, 10V | 15Ohm @ 200mA, 10V | 2V @ 1mA | - | ±20V | 110pF @ 25V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
|
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Vishay Siliconix |
MOSFET N-CH 620V 6A TO252AA |
23,352 |
|
E | N-Channel | MOSFET (Metal Oxide) | 620V | 6A (Tc) | 10V | 900mOhm @ 3A, 10V | 4V @ 250µA | 34nC @ 10V | ±30V | 578pF @ 100V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 60V 14A DPAK |
19,932 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 14A (Tc) | 10V | 100mOhm @ 8.4A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 640pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Vishay Siliconix |
MOSFET P-CHAN 30V POWERPAK SO-8 |
58,752 |
|
TrenchFET® Gen III | P-Channel | MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 4.6mOhm @ 15A, 10V | 2.3V @ 250µA | 138nC @ 10V | ±20V | 4930pF @ 15V | - | 69.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
|
|
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STMicroelectronics |
MOSFET N-CH 620V 4.5A DPAK |
22,800 |
|
- | N-Channel | MOSFET (Metal Oxide) | 620V | 4.5A (Tc) | 10V | 2Ohm @ 1.9A, 10V | 4.5V @ 50µA | 23nC @ 10V | ±30V | 560pF @ 50V | - | 70W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
ON Semiconductor |
MOSFET N-CH 250V 4.4A IPAK-3 |
52,308 |
|
UniFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 4.4A (Tc) | 10V | 1.1Ohm @ 2.2A, 10V | 5V @ 250µA | 6nC @ 10V | ±30V | 250pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
|
|
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Rohm Semiconductor |
4V DRIVE NCH MOSFET (CORRESPONDS |
22,440 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 45V | 7A (Ta) | 4V, 10V | 25mOhm @ 7A, 10V | 2.5V @ 1mA | 16.8nC @ 5V | ±20V | 1000pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
|
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Vishay Siliconix |
MOSFET P-CH 250V 2.7A DPAK |
23,940 |
|
- | P-Channel | MOSFET (Metal Oxide) | 250V | 2.7A (Tc) | 10V | 3Ohm @ 1.7A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 220pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
T8 80V |
16,464 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
60V 3.0 MOHM T6 S08FL SIN |
250,518 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 26A (Ta), 133A (Tc) | 4.5V, 10V | 3mOhm @ 50A, 10V | 2V @ 250µA | 40.7nC @ 10V | ±20V | 2880pF @ 25V | - | 4W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
|
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Infineon Technologies |
MOSFET N-CH 600V 4.5A TO252-3 |
38,910 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 4.5A (Tc) | 10V | 950mOhm @ 2.8A, 10V | 3.9V @ 200µA | 25nC @ 10V | ±20V | 490pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 30V 15A PPAK SO-8 |
26,886 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta) | 4.5V, 10V | 4.2mOhm @ 25A, 10V | 3V @ 250µA | 40nC @ 4.5V | ±20V | 3775pF @ 15V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |