晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 174/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CH 650V POWERPAK SO-8L |
29,418 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 7.9A (Tc) | 10V | 598mOhm @ 3.5A, 10V | 4V @ 250µA | 44nC @ 10V | ±30V | 820pF @ 100V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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ON Semiconductor |
MOSFET N-CH 250V 7.4A IPAK |
49,710 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 7.4A (Tc) | 10V | 420mOhm @ 3.7A, 10V | 5V @ 250µA | 20nC @ 10V | ±30V | 700pF @ 25V | - | 2.5W (Ta), 55W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 950V 4A TO251 |
20,154 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 950V | 4A (Tc) | 10V | 2Ohm @ 1.7A, 10V | 3.5V @ 80µA | 10nC @ 10V | ±20V | 330pF @ 400V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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STMicroelectronics |
MOSFET N CH 30V 65A IPAK |
13,350 |
|
STripFET™ V | N-Channel | MOSFET (Metal Oxide) | 30V | 65A (Tc) | 4.5V, 10V | 7.3mOhm @ 32.5A, 10V | 3V @ 250µA | 8nC @ 4.5V | ±22V | 1290pF @ 25V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
|
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|
ON Semiconductor |
MOSFET N-CH 30V 23A 8MLP |
28,026 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 23A (Ta) | 2.5V, 4.5V | 2.7mOhm @ 23A, 4.5V | 1.5V @ 250µA | 38nC @ 4.5V | ±12V | 5075pF @ 15V | - | 2.3W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Power33 | 8-PowerWDFN |
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STMicroelectronics |
MOSFET N-CH 650V 5.5A IPAK |
20,802 |
|
MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 650V | 5.5A (Tc) | 10V | 820mOhm @ 2.5A, 10V | 4V @ 250µA | 11.5nC @ 10V | ±25V | 325pF @ 100V | - | 60W (Tc) | 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
|
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|
ON Semiconductor |
MOSFET N CH 600V 4.5A IPAK |
14,604 |
|
SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 4.5A (Tc) | 10V | 900mOhm @ 2.3A, 10V | 3.5V @ 250µA | 17nC @ 10V | ±20V | 710pF @ 25V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 600V 12A POWER88 |
28,908 |
|
SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Ta) | 10V | 299mOhm @ 6A, 10V | 3.5V @ 250µA | 51nC @ 10V | ±20V | 1948pF @ 380V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Power88 | 4-PowerTSFN |
|
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STMicroelectronics |
MOSFET N-CH 525V 2.5A TO-220FP |
16,158 |
|
SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 525V | 2.5A (Tc) | 10V | 2.6Ohm @ 1.25A, 10V | 4.5V @ 50µA | 11nC @ 10V | ±30V | 334pF @ 100V | - | 20W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
SUPERFET3 650V IPAK PKG |
16,032 |
|
SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 6A (Tc) | 10V | 600mOhm @ 3A, 10V | 4.5V @ 600µA | 11nC @ 10V | ±30V | 465pF @ 400V | - | 54W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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Alpha & Omega Semiconductor |
600V A MOS5TM N-CHANNEL POWER TR |
20,376 |
|
aMOS5™ | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 3.8V @ 250µA | 20nC @ 10V | ±20V | 955pF @ 100V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 500V 5.3A TO252 DPK |
23,658 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 5.3A (Tc) | 10V | 1.5Ohm @ 2.5A, 10V | 5V @ 250µA | 20nC @ 10V | ±30V | 325pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 100V 6.8A D2PAK |
17,250 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 6.8A (Tc) | 10V | 600mOhm @ 4.1A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 390pF @ 25V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CHAN 60V |
28,842 |
|
TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 60V | 42.8A (Ta), 100A (Tc) | 6V, 10V | 1.7mOhm @ 20A, 10V | 3.4V @ 250µA | 102nC @ 10V | ±20V | 5130pF @ 30V | - | 6.25W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8DC | PowerPAK® SO-8 |
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ON Semiconductor |
MOSFET N-CH 60V 10.6A POWER56 |
22,830 |
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UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 10.6A (Ta), 22A (Tc) | 6V, 10V | 11.5mOhm @ 10.6A, 10V | 4V @ 250µA | 45nC @ 10V | ±20V | 2800pF @ 30V | - | 2.5W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (5x6), Power56 | 8-PowerWDFN |
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Rohm Semiconductor |
RS1E260AT IS THE HIGH RELIABILIT |
22,626 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 26A (Ta), 80A (Tc) | 4.5V, 10V | 3.1mOhm @ 26A, 10V | 2.5V @ 1mA | 175nC @ 10V | ±20V | 7850pF @ 15V | - | 3W (Ta) | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 150V 5A 8-SOIC |
39,702 |
|
STripFET™ III | N-Channel | MOSFET (Metal Oxide) | 150V | 5A (Tc) | 10V | 57mOhm @ 2.5A, 10V | 4V @ 250µA | 29nC @ 10V | ±20V | 1300pF @ 25V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 100V |
21,924 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 100V | 23.2A (Ta), 95A (Tc) | 7.5V, 10V | 4.8mOhm @ 20A, 10V | 3.4V @ 250µA | 108nC @ 10V | ±20V | 5400pF @ 50V | - | 6.25W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8DC | PowerPAK® SO-8 |
|
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STMicroelectronics |
MOSFET N-CH 620V 2.5A IPAK |
18,672 |
|
SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 620V | 2.5A (Tc) | 10V | 3Ohm @ 1.25A, 10V | 4.5V @ 50µA | 17nC @ 10V | ±30V | 386pF @ 50V | - | 45W (Tc) | 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
|
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STMicroelectronics |
MOSFET N-CH 600V 1.4A TO-220FP |
17,004 |
|
SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 600V | 1.4A (Tc) | 10V | 8Ohm @ 700mA, 10V | 4.5V @ 50µA | 10nC @ 10V | ±30V | 170pF @ 25V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 200V 2.6A I-PAK |
24,786 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 2.6A (Tc) | 10V | 1.5Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
|
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STMicroelectronics |
MOSFET N-CH 600V IPAK |
33,198 |
|
MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 4.5A (Tc) | 10V | 1.2Ohm @ 2.25A, 10V | 4V @ 250µA | 13.5nC @ 10V | ±25V | 232pF @ 100V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 250V 2.2A I-PAK |
26,454 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 2.2A (Tc) | 10V | 2Ohm @ 1.3A, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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STMicroelectronics |
MOSFET N-CH 620V 2.2A TO220 |
17,766 |
|
SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 620V | 2.2A (Tc) | 10V | 3.6Ohm @ 1.1A, 10V | 4.5V @ 50µA | 15nC @ 10V | ±30V | 340pF @ 50V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
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STMicroelectronics |
MOSFET N CH 620V 3.8A I2PAKFP |
13,098 |
|
SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 620V | 3.8A (Tc) | 10V | 2Ohm @ 1.9A, 10V | 4.5V @ 50µA | 22nC @ 10V | ±30V | 550pF @ 50V | - | 25W (Tc) | 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak |
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Vishay Siliconix |
MOSFET N-CH 800V 1.8A TO-220AB |
23,796 |
|
- | N-Channel | MOSFET (Metal Oxide) | 800V | 1.8A (Tc) | 10V | 6.5Ohm @ 1.1A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 530pF @ 25V | - | 54W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
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STMicroelectronics |
MOSFET N-CH 30V 55A I2PAK |
23,508 |
|
STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 30V | 55A (Tc) | 4.5V, 10V | 13mOhm @ 27.5A, 10V | 2.5V @ 250µA | 27nC @ 4.5V | ±16V | 1265pF @ 25V | - | 80W (Tc) | -60°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
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STMicroelectronics |
MOSFET N-CH 620V 5.5A I2PAK |
18,516 |
|
SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 620V | 5.5A (Tc) | 10V | 1.2Ohm @ 2.8A, 10V | 4.5V @ 50µA | 34nC @ 10V | ±30V | 875pF @ 50V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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STMicroelectronics |
MOSFET N-CH 25V 21A POLARPAK |
25,206 |
|
STripFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 21A (Ta) | 4.5V, 10V | 7.3mOhm @ 10.5A, 10V | 2.5V @ 250µA | 9.5nC @ 4.5V | ±16V | 1425pF @ 25V | - | 5.2W (Ta) | 150°C (TJ) | Surface Mount | PolarPak® | PolarPak® |
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Vishay Siliconix |
MOSFET N-CH 800V 2.8A DPAK |
14,676 |
|
E | N-Channel | MOSFET (Metal Oxide) | 800V | 2.8A (Tc) | 10V | 2.75Ohm @ 1A, 10V | 4V @ 250µA | 19.6nC @ 10V | ±30V | 315pF @ 100V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |