晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 235/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Texas Instruments |
MOSFET P-CH 15V 1.27A 8-TSSOP |
6,822 |
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- | P-Channel | MOSFET (Metal Oxide) | 15V | 1.27A (Ta) | 2.7V, 10V | 180mOhm @ 1.5A, 10V | 1.5V @ 250µA | 5.45nC @ 10V | +2V, -15V | - | - | 504mW (Ta) | -40°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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ON Semiconductor |
MOSFET N-CH 100V 38A 8-MLP |
3,852 |
|
Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 38A (Tc) | 4.5V, 10V | 26mOhm @ 20A, 10V | 3V @ 250µA | 84nC @ 10V | ±20V | 3945pF @ 25V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N CH 40V 120A TO220AB |
21,744 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 6V, 10V | 3.3mOhm @ 70A, 10V | 3.9V @ 100µA | 93nC @ 10V | ±20V | 3183pF @ 25V | - | 99W (Tc) | - | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 30V 11.3A 1212-8 |
6,642 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 11.3A (Tc) | 4.5V, 10V | 7.5mOhm @ 17.8A, 10V | 1.5V @ 250µA | 27nC @ 4.5V | ±12V | 2610pF @ 15V | - | 1.5W (Ta) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 40V PWRPAK SO-8 |
8,136 |
|
TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 40V | 62.5A (Ta), 100A (Tc) | 4.5V, 10V | 1mOhm @ 20A, 10V | 2.2V @ 250µA | 194nC @ 10V | +20V, -16V | 8445pF @ 20V | - | 6.25W (Ta), 100W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Diodes Incorporated |
MOSFET N-CHAN 61V 100V POWERDI50 |
7,524 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | 11.8A (Ta), 100A (Tc) | 6V, 10V | 8.8mOhm @ 13A, 10V | 4V @ 250µA | 56.4nC @ 10V | ±20V | 4468pF @ 50V | - | 1.5W (Ta), 166W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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STMicroelectronics |
MOSFET P-CH 30V 7A 8-SOIC |
8,964 |
|
STripFET™ II | P-Channel | MOSFET (Metal Oxide) | 30V | 7A (Tc) | 4.5V, 10V | 21mOhm @ 3.5A, 10V | 2.5V @ 250µA | 38nC @ 4.5V | ±20V | 2600pF @ 25V | - | 2.5W (Tc) | 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Nexperia |
MOSFET N-CH 40V 120A LFPAK56 |
5,004 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Ta) | 10V | 1.7mOhm @ 25A, 10V | 3.6V @ 1mA | 96nC @ 10V | +20V, -10V | 6142pF @ 25V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Rohm Semiconductor |
MOSFET N-CH 200V 5A CPT3 |
3,042 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 5A (Ta) | 10V | 720mOhm @ 2.5A, 10V | 4V @ 1mA | 9.3nC @ 10V | ±30V | 292pF @ 10V | - | 20W (Tc) | - | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
PMOS PWR56 40V 8 MOHM |
3,744 |
|
Automotive, AEC-Q101, PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 40V | 65A (Tc) | 4.5V, 10V | 8mOhm @ 65A, 10V | 3V @ 250µA | 67nC @ 10V | ±16V | 3360pF @ 20V | - | 107W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | 8-DFN (5.1x6.3) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 25V 30A 8-PQFN |
2,376 |
|
PowerTrench®, SyncFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 30A (Ta), 70A (Tc) | 4.5V, 10V | 1.8mOhm @ 30A, 10V | 2.2V @ 1mA | 68nC @ 10V | ±12V | 4350pF @ 13V | - | 2.5W (Ta), 65W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 900V 2.1A DPAK |
7,866 |
|
SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 900V | 2.1A (Tc) | 10V | 6.5Ohm @ 1.05A, 10V | 4.5V @ 50µA | 27nC @ 10V | ±30V | 485pF @ 25V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 7A DPAK |
2,178 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Ta) | 10V | 670mOhm @ 3.5A, 10V | 4.5V @ 350µA | 16nC @ 10V | ±30V | 490pF @ 300V | Super Junction | 60W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 150V 18A 8-SOP |
4,518 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 150V | 18A (Ta) | 10V | 33mOhm @ 9A, 10V | 4V @ 300µA | 10.6nC @ 10V | ±20V | 1100pF @ 75V | - | 1.6W (Ta), 57W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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ON Semiconductor |
MOSFET N-CH 25V 33A 8-PQFN |
28,356 |
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PowerTrench®, SyncFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 38A (Ta), 90A (Tc) | 4.5V, 10V | 1.5mOhm @ 33A, 10V | 2.2V @ 1mA | 81nC @ 10V | ±12V | 5118pF @ 13V | - | 2.5W (Ta), 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Dual Cool™56 | 8-PowerTDFN |
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Nexperia |
MOSFET N-CH 60V 100A D2PAK |
13,770 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 3.2mOhm @ 25A, 10V | 4V @ 1mA | 130nC @ 10V | ±20V | 8079pF @ 30V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 40V 50A PPAK SO-8 |
5,238 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 2.8mOhm @ 20A, 10V | 2.5V @ 250µA | 117nC @ 10V | ±20V | 4750pF @ 20V | - | 5.4W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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STMicroelectronics |
MOSFET N-CH 30V 4.5A 8-SOIC |
24,246 |
|
STripFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 4.5A (Tc) | 5V, 10V | 55mOhm @ 2A, 10V | 1V @ 250µA | 4.7nC @ 5V | ±20V | 330pF @ 25V | Schottky Diode (Isolated) | 2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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STMicroelectronics |
MOSFET N-CH 150V 5A 8SO |
2,394 |
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DeepGATE™, STripFET™ | N-Channel | MOSFET (Metal Oxide) | 150V | 5A (Tc) | 10V | 63mOhm @ 2.5A, 10V | 4V @ 250µA | 48nC @ 10V | ±20V | 2710pF @ 25V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET LOW ON-RESISTANCE AND FAS |
2,682 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 3A (Tc) | 10V | 1.5Ohm @ 1A, 10V | 5.5V @ 1mA | 8nC @ 10V | ±20V | 185pF @ 25V | - | 44W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 12A DPAK |
3,978 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta), 50A (Tc) | 4.5V, 10V | 14.5mOhm @ 12A, 10V | 3V @ 250µA | 28nC @ 5V | ±20V | 1230pF @ 15V | - | 3.2W (Ta), 56W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET P-CH 100V 13A SOT428 |
5,274 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 13A (Ta) | 4V, 10V | - | - | - | ±20V | - | - | 20W (Ta) | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 100V 100A I2PAK |
53,838 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tj) | 10V | 8.5mOhm @ 25A, 10V | 4V @ 1mA | 111nC @ 10V | ±20V | 5512pF @ 50V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
MOSFET N-CH 60V 14A 8-PQFN |
5,040 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 14A (Ta), 42A (Tc) | 8V, 10V | 7.4mOhm @ 14A, 10V | 4.5V @ 250µA | 40nC @ 10V | ±20V | 2850pF @ 30V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 80V 60A PPAK SO-8 |
3,258 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 60A (Tc) | 4.5V, 10V | 8mOhm @ 20A, 10V | 2.6V @ 250µA | 54nC @ 10V | ±20V | 1855pF @ 40V | - | 5W (Ta), 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
|
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STMicroelectronics |
MOSFET N-CH 800V 8POWERFLAT |
8,820 |
|
SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 800V | 2.5A (Tc) | 10V | 2.5Ohm @ 1.5A, 10V | 5V @ 100µA | 10.5nC @ 10V | ±30V | 175pF @ 100V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
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ON Semiconductor |
MOSFET N-CH 30V 8.6A 8SOIC |
4,662 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 8.6A (Ta) | 4.5V, 10V | 6.5mOhm @ 7.5A, 10V | 2.5V @ 250µA | 38.5nC @ 10V | ±20V | 2563pF @ 25V | - | 810mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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STMicroelectronics |
MOSFET P-CH 30V 52A DPAK |
8,280 |
|
STripFET™ H6 | P-Channel | MOSFET (Metal Oxide) | 30V | 52A (Tc) | 4.5V, 10V | 12mOhm @ 26A, 10V | 2.5V @ 250µA | 33nC @ 4.5V | ±20V | 3350pF @ 25V | - | 70W (Tc) | 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 20V 40A PPAK 1212 |
4,374 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 40A (Tc) | 2.5V, 10V | 3.6mOhm @ 20A, 10V | 1.1V @ 250µA | 225nC @ 10V | ±12V | 6600pF @ 10V | - | 4.8W (Ta), 57W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S (3.3x3.3) | PowerPAK® 1212-8S |
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Nexperia |
MOSFET N-CH 150V 29A DPAK |
4,482 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 29A (Tc) | 10V | 63mOhm @ 15A, 10V | 4V @ 1mA | 55nC @ 10V | ±20V | 2390pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |