晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 25/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK |
61,644 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 4V, 10V | 27mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | ±16V | 1700pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 150V 13A DPAK |
157,440 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 13A (Tc) | 10V | 295mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | 860pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 59A |
52,782 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 59A (Tc) | 6V, 10V | 12.2mOhm @ 46A, 10V | 3.5V @ 46µA | 35nC @ 10V | ±20V | 2500pF @ 50V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 500V 2.1A DPAK |
39,174 |
|
QFET® | P-Channel | MOSFET (Metal Oxide) | 500V | 2.1A (Tc) | 10V | 4.9Ohm @ 1.05A, 10V | 5V @ 250µA | 23nC @ 10V | ±30V | 660pF @ 25V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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|
ON Semiconductor |
MOSFET P-CH 40V 10.8A 8-SOIC |
142,398 |
|
PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 40V | 10.8A (Ta) | 4.5V, 10V | 13mOhm @ 10.5A, 10V | 3V @ 250µA | 49nC @ 10V | ±20V | 2670pF @ 20V | - | 5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 25V 60A POWERPAKSO-8 |
28,200 |
|
TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 25V | 60A (Tc) | 4.5V, 10V | 0.96mOhm @ 15A, 10V | 2.4V @ 250µA | 48nC @ 4.5V | +20V, -16V | 5150pF @ 10V | - | 54.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Infineon Technologies |
MOSFET N-CH 200V 660MA SOT-223 |
28,470 |
|
SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 660mA (Ta) | 0V, 10V | 1.8Ohm @ 660mA, 10V | 1V @ 400µA | 14nC @ 5V | ±20V | 430pF @ 25V | Depletion Mode | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET N-CH 100V 2.9A SOT223 |
55,992 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 2.9A (Ta) | 10V | 125mOhm @ 2.9A, 10V | 4V @ 250µA | 17nC @ 10V | ±20V | 859pF @ 50V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET N-CH 60V 6.9A SOT223 |
228,018 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 5.4A (Ta) | 10V | 40mOhm @ 8.2A, 10V | 3V @ 250µA | 24.2nC @ 5V | ±20V | 1407pF @ 40V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET N-CH 30V 15A POWER33 |
70,140 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta), 20A (Tc) | 2.5V, 4.5V | 6.1mOhm @ 15A, 4.5V | 1.5V @ 250µA | 27.2nC @ 4.5V | ±12V | 3365pF @ 15V | - | 2.3W (Ta), 41W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Power33 | 8-PowerTDFN |
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Nexperia |
MOSFET N-CH 60V 100A LFPAK |
689,226 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 5.2mOhm @ 15A, 10V | 4V @ 1mA | 56nC @ 10V | ±20V | 3501pF @ 30V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Infineon Technologies |
MOSFET N-CH 600V 7.3A TO252 |
26,064 |
|
CoolMOS™ C6 | N-Channel | MOSFET (Metal Oxide) | 600V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5nC @ 10V | ±20V | 440pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 30V 100A LFPAK |
118,752 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 1.15mOhm @ 25A, 10V | 1.95V @ 1mA | 103.5nC @ 10V | ±20V | 6645pF @ 15V | - | 272W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Vishay Siliconix |
MOSFET P-CH 60V 3.2A PPAK SO-8 |
328,092 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 3.2A (Ta) | 4.5V, 10V | 64mOhm @ 5A, 10V | 3V @ 250µA | 40nC @ 10V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Renesas Electronics America |
MOSFET N-CH 60V 25A LFPAK |
305,700 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 25A (Ta) | 4.5V, 10V | 14mOhm @ 12.5A, 10V | - | 15nC @ 4.5V | ±20V | 2030pF @ 10V | - | 45W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Vishay Siliconix |
MOSFET N-CH 100V 6.8A 8-SOIC |
65,082 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 6.8A (Tc) | 6V, 10V | 63mOhm @ 4.4A, 10V | 4.5V @ 250µA | 20nC @ 10V | ±20V | 600pF @ 50V | - | 2.5W (Ta), 6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET P-CH 40V 11A 8SOIC |
57,174 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 40V | 11A (Ta) | 4.5V, 10V | 13mOhm @ 11A, 10V | 3V @ 250µA | 56nC @ 4.5V | ±20V | 4350pF @ 20V | - | 2.4W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 150V 21A 8-TSDSON |
334,638 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 21A (Tc) | 8V, 10V | 52mOhm @ 18A, 10V | 4V @ 35µA | 12nC @ 10V | ±20V | 890pF @ 75V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 100V 50A 8VSON |
2,724 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 50A (Ta) | 6V, 10V | 14.5mOhm @ 10A, 10V | 3.6V @ 250µA | 21nC @ 10V | ±20V | 1680pF @ 50V | - | 2.8W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON (3.3x3.3) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N CH 200V 3.7A 8-SO |
32,328 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 3.7A (Ta) | 10V | 78mOhm @ 2.2A, 10V | 5V @ 100µA | 44nC @ 10V | ±20V | 1750pF @ 100V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 40V 16.4A DPAK |
50,928 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 16.4A (Ta), 101A (Tc) | 5V, 10V | 4.4mOhm @ 50A, 10V | 3.5V @ 250µA | 100nC @ 10V | ±20V | 5025pF @ 25V | - | 2.5W (Ta), 93.75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET P-CH 40V 9.1A 8-SO |
109,884 |
|
- | P-Channel | MOSFET (Metal Oxide) | 40V | 9.1A (Ta) | 4.5V, 10V | 11mOhm @ 9.8A, 10V | 2.5V @ 250µA | 47.5nC @ 5V | ±25V | 4234pF @ 20V | - | 1.45W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 30V 12A PPAK SO-8 |
48,054 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 7mOhm @ 19A, 10V | 2.5V @ 250µA | 18nC @ 4.5V | ±20V | - | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Infineon Technologies |
MOSFET N-CH 60V 50A TDSON-8 |
583,698 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 15A (Ta), 50A (Tc) | 4.5V, 10V | 6.7mOhm @ 50A, 10V | 2.2V @ 35µA | 67nC @ 10V | ±20V | 5100pF @ 30V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 500V 0.4A SOT-223 |
248,094 |
|
SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 500V | 400mA (Ta) | 10V | 4Ohm @ 400mA, 10V | 4V @ 1mA | - | ±20V | 400pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 40V 10A 8-SOIC |
211,404 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 10A (Ta) | 2.8V, 10V | 13mOhm @ 10A, 10V | 2V @ 250µA | 44nC @ 4.5V | ±12V | 3430pF @ 20V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 200V DPAK-3 |
76,662 |
|
UniFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 16A (Tc) | 5V, 10V | 125mOhm @ 8A, 10V | 2.5V @ 250µA | 40nC @ 10V | ±20V | 1575pF @ 25V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 25V 33A TDSON-8 |
297,756 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 33A (Ta), 100A (Tc) | 4.5V, 10V | 1.4mOhm @ 30A, 10V | 2V @ 250µA | 39nC @ 10V | ±20V | 2700pF @ 12V | - | 2.5W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET P-CH 30V 9.7A 8-SOIC |
21,156 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 9.7A (Ta) | 2.5V, 10V | 10.5mOhm @ 12.6A, 10V | 1.4V @ 250µA | 70nC @ 4.5V | ±12V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 150V 1.2A 6-TSOP |
154,584 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 1.2A (Ta) | 6V, 10V | 375mOhm @ 1.5A, 10V | 4V @ 250µA | 8nC @ 10V | ±20V | - | - | 1.14W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |