晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 24/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET P-CH 60V 2.9A SOT-223 |
64,758 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 2.9A (Ta) | 10V | 130mOhm @ 2.9A, 10V | 4V @ 1mA | 33nC @ 10V | ±20V | 875pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET P-CH 40V 50A TO252-3 |
97,848 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 10.6mOhm @ 50A, 10V | 2.2V @ 85µA | 59nC @ 10V | ±16V | 3900pF @ 25V | - | 58W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 150V 2A POWER33 |
219,630 |
|
PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 150V | 2A (Ta), 8.4A (Tc) | 6V, 10V | 307mOhm @ 2A, 10V | 4V @ 250µA | 13nC @ 10V | ±25V | 885pF @ 75V | - | 2.3W (Ta), 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
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STMicroelectronics |
MOSFET N-CH 20V 6A 8SOIC |
25,482 |
|
STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 20V | 6A (Tc) | 1.95V, 4.5V | 40mOhm @ 3A, 4.5V | 600mV @ 250µA | 11.5nC @ 4.5V | ±12V | 460pF @ 15V | - | 2.5W (Tc) | 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
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|
Infineon Technologies |
MOSFET N-CH 80V 30A DPAK |
99,300 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 30A (Tc) | 4.5V, 10V | 28mOhm @ 23A, 10V | 2.5V @ 250µA | 33nC @ 4.5V | ±16V | 1890pF @ 25V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET P-CH 240V 0.48A SOT223 |
56,724 |
|
- | P-Channel | MOSFET (Metal Oxide) | 240V | 480mA (Ta) | 3.5V, 10V | 9Ohm @ 200mA, 10V | 2V @ 1mA | - | ±40V | 200pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 80V 30A DPAK |
58,998 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 30A (Tc) | 4.5V, 10V | 28mOhm @ 23A, 10V | 2.5V @ 250µA | 33nC @ 4.5V | ±16V | 1890pF @ 25V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 44A DPAK |
82,260 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 44A (Tc) | 10V | 27mOhm @ 26A, 10V | 4V @ 250µA | 65nC @ 10V | ±20V | 1300pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 55V 31A DPAK |
343,278 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 31A (Tc) | 10V | 65mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1200pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 60V 18.3A TO-252 |
259,560 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 18.3A (Tc) | 4.5V, 10V | 60mOhm @ 10A, 10V | 3V @ 250µA | 40nC @ 10V | ±20V | 1710pF @ 25V | - | 2.3W (Ta), 38.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 40V 40A PPAK SO-8 |
138,204 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 40A (Tc) | 4.5V, 10V | 6.6mOhm @ 20A, 10V | 2.5V @ 250µA | 48nC @ 10V | ±20V | 1785pF @ 20V | - | 5W (Ta), 34.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 30V 30A PPAK SO-8 |
51,552 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 7.9mOhm @ 20A, 10V | 3V @ 250µA | 30nC @ 10V | ±20V | 1155pF @ 15V | - | 4.8W (Ta), 41.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8 |
24,240 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 3.5mOhm @ 15A, 10V | 2.4V @ 250µA | 65nC @ 10V | ±20V | 2730pF @ 15V | - | 5W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Texas Instruments |
MOSFET N-CH 30V 100A 8SON |
21,690 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta), 100A (Tc) | 4.5V, 10V | 5.2mOhm @ 20A, 10V | 2.1V @ 250µA | 8.3nC @ 4.5V | ±20V | 1250pF @ 15V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 100V TRENCH SSOT-6 |
53,316 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 2.7A (Ta) | 6V, 10V | 109mOhm @ 2.7A, 10V | 4V @ 250µA | 5nC @ 10V | ±20V | 210pF @ 50V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT™-6 | SOT-23-6 Thin, TSOT-23-6 |
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Nexperia |
MOSFET N-CH 80V LFPAK |
51,858 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 67A (Tc) | 10V | 11mOhm @ 25A, 10V | 4V @ 1mA | 45nC @ 10V | ±20V | 2800pF @ 40V | - | 117W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Infineon Technologies |
MOSFET N-CH 80V 40A TSDSON-8 |
37,524 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 10A (Ta), 40A (Tc) | 6V, 10V | 12.3mOhm @ 20A, 10V | 3.5V @ 33µA | 25nC @ 10V | ±20V | 1700pF @ 40V | - | 2.1W (Ta), 66W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 80V 55A TDSON-8 |
1,142,814 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 11A (Ta), 55A (Tc) | 6V, 10V | 12.3mOhm @ 33A, 10V | 3.5V @ 33µA | 25nC @ 10V | ±20V | 1870pF @ 40V | - | 2.5W (Ta), 66W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET P-CH 20V POWER33 |
85,884 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 14A (Ta), 56A (Tc) | 1.8V, 4.5V | 6.5mOhm @ 14A, 4.5V | 1V @ 250µA | 61nC @ 4.5V | ±8V | 7435pF @ 10V | - | 2.3W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (3.3x3.3), Power33 | 8-PowerWDFN |
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ON Semiconductor |
MOSFET P-CH 20V 13.5A 8-SOIC |
197,670 |
|
PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 13.5A (Ta) | 1.8V, 4.5V | 8.5mOhm @ 13.5A, 4.5V | 1.5V @ 250µA | 120nC @ 4.5V | ±8V | 8237pF @ 10V | - | 2.5W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 55V 56A DPAK |
221,088 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 56A (Tc) | 10V | 16mOhm @ 34A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 2430pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH TO252-3 |
314,094 |
|
Automotive, AEC-Q101, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 60A (Tc) | 4.5V, 10V | 12mOhm @ 60A, 10V | 2.1V @ 46µA | 49nC @ 10V | ±16V | 3170pF @ 25V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 900V 1.7A DPAK |
92,604 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 900V | 1.7A (Tc) | 10V | 7.2Ohm @ 850mA, 10V | 5V @ 250µA | 15nC @ 10V | ±30V | 500pF @ 25V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 9.6A POWER33 |
1,150,836 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 9.6A (Ta), 16.5A (Tc) | 4.5V, 10V | 14mOhm @ 9.6A, 10V | 3V @ 250µA | 26nC @ 10V | ±20V | 1230pF @ 15V | - | 2.1W (Ta), 31W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3), Power33 | 8-PowerWDFN |
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STMicroelectronics |
MOSFET N-CH 30V 6.5A SOT223 |
30,318 |
|
STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 30V | 6.5A (Tc) | 5V, 10V | 50mOhm @ 2A, 10V | 1V @ 250µA | 9nC @ 10V | ±16V | 330pF @ 25V | - | 3.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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STMicroelectronics |
MOSFET N-CH 60V 16A D2PAK |
31,644 |
|
STripFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 16A (Tc) | 5V, 10V | 90mOhm @ 8A, 10V | 1V @ 250µA (Min) | 10nC @ 4.5V | ±16V | 345pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 20V 15A 8-SOIC |
72,516 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 15A (Ta) | 2.5V, 4.5V | 8.2mOhm @ 15A, 4.5V | 1.2V @ 250µA | 130nC @ 4.5V | ±12V | 7980pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 100V 3.4A 1212-8 |
201,246 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 3.4A (Ta) | 6V, 10V | 62mOhm @ 5.4A, 10V | 4.5V @ 250µA | 17nC @ 10V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Microchip Technology |
MOSFET N-CH 250V 360MA SOT89-3 |
93,390 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 360mA (Tj) | 0V | 6Ohm @ 200mA, 0V | - | - | ±20V | 350pF @ 25V | Depletion Mode | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
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Infineon Technologies |
MOSFET N CH 40V 90A DPAK |
127,626 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 6V, 10V | 2.4mOhm @ 90A, 10V | 3.9V @ 100µA | 134nC @ 10V | ±20V | 4610pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |