晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 277/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Rohm Semiconductor |
MOSFET N-CH 200V 8A TO220 |
8,244 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 8A (Tc) | 10V | 770mOhm @ 4A, 10V | 5.25V @ 1mA | 8.5nC @ 10V | ±30V | 330pF @ 25V | - | 2.23W (Ta), 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET NCH 500V 11.1A TO220-3 |
8,856 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 11.1A (Tc) | 13V | 500mOhm @ 2.3A, 13V | 3.5V @ 200µA | 18.7nC @ 10V | ±20V | 433pF @ 100V | - | 28W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
MOSFET N-CH 500V 8A TO-220 |
16,500 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850mOhm @ 4A, 10V | 4.5V @ 250µA | 28nC @ 10V | ±30V | 1042pF @ 25V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
|
Alpha & Omega Semiconductor |
MOSFET N-CH 100V 22A TO220 |
8,124 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 22A (Tc) | 4.5V, 10V | 24mOhm @ 20A, 10V | 2.7V @ 250µA | 15nC @ 10V | ±20V | 1190pF @ 50V | - | 2.1W (Ta), 27W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
|
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|
Nexperia |
MOSFET N-CH 55V 20.3A TO220AB |
8,640 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 20.3A (Tc) | 10V | 75mOhm @ 10A, 10V | 4V @ 1mA | 11nC @ 10V | ±20V | 483pF @ 25V | - | 62W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
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ON Semiconductor |
MOSFET P-CH 60V 8.6A TO-220F |
12,408 |
|
QFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 8.6A (Tc) | 10V | 175mOhm @ 4.3A, 10V | 4V @ 250µA | 17nC @ 10V | ±25V | 550pF @ 25V | - | 30W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
|
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Infineon Technologies |
MOSFET N-CH 500V 6.3A TO-220FP |
18,588 |
|
CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 500V | 6.3A (Tc) | 13V | 380mOhm @ 3.2A, 13V | 3.5V @ 260µA | 24.8nC @ 10V | ±20V | 584pF @ 100V | - | 29.2W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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|
Rohm Semiconductor |
MOSFET N-CH 250V 5A TO220 |
8,262 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 5A (Tc) | 10V | 1.36Ohm @ 2.5A, 10V | 5.5V @ 1mA | 8.5nC @ 10V | ±30V | 350pF @ 25V | - | 2.23W (Ta), 30W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
|
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|
Infineon Technologies |
MOSFET N-CH 650V 7.3A D2PAK |
18,840 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 350µA | 27nC @ 10V | ±20V | 790pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V TO220-3 |
8,016 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 70A (Tc) | 10V | 4.1mOhm @ 70A, 10V | 4V @ 45µA | 56nC @ 10V | ±20V | 4500pF @ 20V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Microchip Technology |
MOSFET N-CH 500V 0.2A TO92-3 |
18,588 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 200mA (Tj) | 4.5V, 10V | 13Ohm @ 400mA, 10V | 4V @ 1mA | - | ±20V | 150pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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|
Alpha & Omega Semiconductor |
MOSFET N-CH 500V 9A TO-220 |
18,864 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 9A (Tc) | 10V | 850mOhm @ 4.5A, 10V | 4.5V @ 250µA | 28nC @ 10V | ±30V | 1042pF @ 25V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
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Infineon Technologies |
MOSFET N-CHANNEL 650V 9A TO220 |
6,672 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 650V | 9A (Tc) | 10V | 360mOhm @ 2.7A, 10V | 4V @ 140µA | 13nC @ 10V | ±30V | 555pF @ 400V | - | 22W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 600V TO-220-3 |
6,444 |
|
CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 600V | 9.1A (Tc) | 10V | 460mOhm @ 3.4A, 10V | 3.5V @ 280µA | 28nC @ 10V | ±20V | 620pF @ 100V | - | 30W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Microchip Technology |
MOSFET N-CH 60V 330MA TO92-3 |
8,880 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 330mA (Tj) | 10V | 3Ohm @ 1A, 10V | 2V @ 1mA | - | ±30V | 50pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 600V 0.16A TO92-3 |
9,300 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 160mA (Tj) | 4.5V, 10V | 20Ohm @ 100mA, 10V | 4V @ 2mA | - | ±20V | 150pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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ON Semiconductor |
MOSFET N-CH 500V 4.5A TO220F |
16,464 |
|
UniFET-II™ | N-Channel | MOSFET (Metal Oxide) | 500V | 4.5A (Tc) | 10V | 1.5Ohm @ 2.25A, 10V | 5V @ 250µA | 12nC @ 10V | ±25V | 440pF @ 25V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
|
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Infineon Technologies |
MOSFET N-CH 60V 50A TO220-3 |
17,244 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 9.3mOhm @ 50A, 10V | 4V @ 34µA | 36nC @ 10V | ±20V | 2900pF @ 30V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 7A TO220SIS |
8,496 |
|
DTMOSV | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 560mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5nC @ 10V | ±30V | 380pF @ 300V | - | 30W | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
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Infineon Technologies |
MOSFET N-CH 30V 70A TO-220-3 |
18,684 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 70A (Tc) | 4.5V, 10V | 4.2mOhm @ 30A, 10V | 2.2V @ 250µA | 38nC @ 10V | ±20V | 3900pF @ 15V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 60A TO220SIS |
6,240 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 40A (Tc) | 10V | 10.4mOhm @ 20A, 10V | 4V @ 300µA | 23nC @ 10V | ±20V | 1700pF @ 30V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 400V 3.1A I-PAK |
22,548 |
|
- | N-Channel | MOSFET (Metal Oxide) | 400V | 3.1A (Tc) | 10V | 1.8Ohm @ 1.9A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 350pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
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Infineon Technologies |
MOSFET N-CH 700V 12.5A TO220 |
8,724 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 12.5A (Tc) | 10V | 360mOhm @ 3A, 10V | 3.5V @ 150µA | 16.4nC @ 10V | ±16V | 517pF @ 400V | - | 26.4W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
|
|
|
Microchip Technology |
MOSFET N-CH 400V 0.175A TO92-3 |
15,408 |
|
- | N-Channel | MOSFET (Metal Oxide) | 400V | 175mA (Tj) | 4.5V, 10V | 12Ohm @ 500mA, 10V | 2V @ 1mA | - | ±20V | 125pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
|
|
|
ON Semiconductor |
MOSFET N-CH 500V 5A TO-220F |
17,160 |
|
UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 1.4Ohm @ 2.5A, 10V | 5V @ 250µA | 15nC @ 10V | ±30V | 640pF @ 25V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
|
|
|
Infineon Technologies |
MOSFET N-CH 800V 2A TO-220 |
9,780 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 2A (Tc) | 10V | 2.7Ohm @ 1.2A, 10V | 3.9V @ 120µA | 16nC @ 10V | ±20V | 290pF @ 100V | - | 30.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
|
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STMicroelectronics |
MOSFET N-CH 650V 7A D2PAK |
20,604 |
|
MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 5V @ 250µA | 15nC @ 10V | ±25V | 690pF @ 100V | - | 70W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
ON Semiconductor |
MOSFET N-CH 200V 9.5A TO-220 |
15,936 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 9.5A (Tc) | 10V | 360mOhm @ 4.75A, 10V | 4V @ 250µA | 26nC @ 10V | ±30V | 510pF @ 25V | - | 72W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
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ON Semiconductor |
MOSFET N-CH 600V 2A TO-220F |
8,946 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Tc) | 10V | 4.7Ohm @ 1A, 10V | 4V @ 250µA | 12nC @ 10V | ±30V | 235pF @ 25V | - | 23W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
|
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ON Semiconductor |
MOSFET N-CH 250V 8.8A TO-220F |
17,292 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 8.8A (Tc) | 10V | 430mOhm @ 4.4A, 10V | 4V @ 250µA | 35nC @ 10V | ±30V | 710pF @ 25V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |