晶體管-FET，MOSFET-單
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
展開過濾器
重置過濾器
應用過濾器
類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 278/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
MOSFET N-CH 800V 4A TO220 |
22,296 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 4A (Tc) | 10V | 1.4Ohm @ 1.4A, 10V | 3.5V @ 70µA | 10nC @ 10V | ±20V | 250pF @ 500V | Super Junction | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 60V 7.7A I-PAK |
6,336 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 7.7A (Tc) | 10V | 200mOhm @ 4.6A, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 300pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
ON Semiconductor |
MOSFET N-CH 800V 5.8A D2PAK |
15,720 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 800V | 5.8A (Tc) | 10V | 1.95Ohm @ 2.9A, 10V | 5V @ 250µA | 31nC @ 10V | ±30V | 1500pF @ 25V | - | 3.13W (Ta), 158W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V 4.4A TO220-FP |
8,592 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 4.4A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 3.5V @ 130µA | 13nC @ 10V | ±20V | 280pF @ 100V | - | 26W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
|
|
|
ON Semiconductor |
MOSFET N-CH 800V 3A TO-220 |
14,376 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 4.8Ohm @ 1.5A, 10V | 5V @ 250µA | 16.5nC @ 10V | ±30V | 705pF @ 25V | - | 107W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 500V 7.5A TO-220FP |
8,820 |
|
CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 500V | 7.5A (Tc) | 13V | 280mOhm @ 4.2A, 13V | 3.5V @ 350µA | 32.6nC @ 10V | ±20V | 773pF @ 100V | - | 30.4W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
|
|
|
Vishay Siliconix |
MOSFET P-CH 60V 6.7A D2PAK |
18,888 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 6.7A (Tc) | 10V | 500mOhm @ 4A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 270pF @ 25V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 80A TO220-3 |
10,800 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 10V | 5.7mOhm @ 80A, 10V | 4V @ 58µA | 82nC @ 10V | ±20V | 6600pF @ 30V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 800V 4.5A TO220 |
7,320 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 4.5A (Tc) | 10V | 1.2Ohm @ 1.7A, 10V | 3.5V @ 80µA | 11nC @ 10V | ±20V | 300pF @ 500V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 58A TO220-3 |
8,484 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 58A (Tc) | 6V, 10V | 12.3mOhm @ 46A, 10V | 3.5V @ 46µA | 35nC @ 10V | ±20V | 2500pF @ 50V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 80A TO220-3 |
10,260 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 4.5V, 10V | 5mOhm @ 80A, 10V | 2.2V @ 58µA | 50nC @ 4.5V | ±20V | 8400pF @ 30V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 9.7A TO220SIS |
8,910 |
|
DTMOSV | N-Channel | MOSFET (Metal Oxide) | 600V | 9.7A (Tc) | 10V | 380mOhm @ 4.9A, 10V | 4V @ 360µA | 20nC @ 10V | ±30V | 590pF @ 300V | - | 30W | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Nexperia |
MOSFET N-CH 60V 92A TO220AB |
9,960 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 92A (Tc) | 10V | 7.8mOhm @ 25A, 10V | 4V @ 1mA | 38.7nC @ 10V | ±20V | 2651pF @ 30V | - | 149W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N CH 120V 60A TO-220 |
7,656 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 120V | 60A (Tc) | 10V | 13.8mOhm @ 16A, 10V | 4V @ 500µA | 34nC @ 10V | ±20V | 2000pF @ 60V | - | 98W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
|
ON Semiconductor |
MOSFET N-CH 400V 6A TO-220 |
17,700 |
|
FRFET® | N-Channel | MOSFET (Metal Oxide) | 400V | 6A (Tc) | 10V | 1.1Ohm @ 3A, 10V | 4V @ 250µA | 20nC @ 10V | ±30V | 625pF @ 25V | - | 73W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
|
|
Microchip Technology |
MOSFET P-CH 200V 0.175A TO92-3 |
16,140 |
|
- | P-Channel | MOSFET (Metal Oxide) | 200V | 175mA (Tj) | 5V, 10V | 12Ohm @ 200mA, 10V | 2.4V @ 1mA | - | ±20V | 150pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
|
|
|
Microchip Technology |
MOSFET P-CH 400V 0.086A TO92-3 |
8,292 |
|
- | P-Channel | MOSFET (Metal Oxide) | 400V | 86mA (Tj) | 4.5V, 10V | 25Ohm @ 100mA, 10V | 2.4V @ 1mA | - | ±20V | 125pF @ 25V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
|
|
|
ON Semiconductor |
MOSFET N-CH 60V 22.5A TO-220F |
18,540 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 22.5A (Tc) | 5V, 10V | 35mOhm @ 11.3A, 10V | 2.5V @ 250µA | 20nC @ 5V | ±20V | 1040pF @ 25V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
|
|
|
ON Semiconductor |
MOSFET N-CH 500V 8A TO220F |
7,656 |
|
UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850mOhm @ 4A, 10V | 5V @ 250µA | 18nC @ 10V | ±25V | 735pF @ 25V | - | 40.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
|
|
|
ON Semiconductor |
MOSFET N-CH 500V 5A TO-220F |
15,396 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 1.4Ohm @ 2.5A, 10V | 4V @ 250µA | 24nC @ 10V | ±30V | 625pF @ 25V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F-3 (Y-Forming) | TO-220-3 Full Pack, Formed Leads |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 21A TO220FP |
16,980 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 21A (Tc) | 10V | 40mOhm @ 11A, 10V | 4V @ 250µA | 34nC @ 10V | ±20V | 700pF @ 25V | - | 37W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
|
|
|
Infineon Technologies |
MOSFET N-CHANNEL 600V 12A TO220 |
19,464 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 280mOhm @ 3.8A, 10V | 4V @ 190µA | 18nC @ 10V | ±20V | 761pF @ 400V | - | 24W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
|
|
|
Nexperia |
MOSFET N-CH 200V 32.7A TO220AB |
6,540 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 32.7A (Tc) | 10V | 77mOhm @ 15A, 10V | 4V @ 1mA | 32.2nC @ 10V | ±20V | 1870pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
Microchip Technology |
MOSFET N-CH 500V 50MA TO92-3 |
18,420 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 50mA (Tj) | 5V, 10V | 60Ohm @ 50mA, 10V | 4V @ 1mA | - | ±20V | 55pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
|
|
|
ON Semiconductor |
MOSFET N-CH 30V 40A TO-220 |
14,760 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 18mOhm @ 20A, 10V | 3V @ 250µA | 17nC @ 5V | ±20V | 1160pF @ 15V | - | 60W (Tc) | -65°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
|
|
Microchip Technology |
MOSFET N-CH 240V 0.19A TO92-3 |
16,092 |
|
- | N-Channel | MOSFET (Metal Oxide) | 240V | 190mA (Tj) | 2.5V, 10V | 6Ohm @ 500mA, 10V | 2V @ 1mA | - | ±20V | 125pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
|
|
|
IXYS |
MOSFET N-CH 100V 44A TO-220 |
6,336 |
|
TrenchMV™ | N-Channel | MOSFET (Metal Oxide) | 100V | 44A (Tc) | 10V | 30mOhm @ 22A, 10V | 4.5V @ 25µA | 33nC @ 10V | ±30V | 1262pF @ 25V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 162A D2PAK |
17,280 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 162A (Tc) | 10V | 4mOhm @ 95A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 7360pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Alpha & Omega Semiconductor |
MOSFET N-CH 600V 10A TO-220 |
8,154 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 750mOhm @ 5A, 10V | 4.5V @ 250µA | 40nC @ 10V | ±30V | 1600pF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 50V 5.3A I-PAK |
16,212 |
|
- | P-Channel | MOSFET (Metal Oxide) | 50V | 5.3A (Tc) | 10V | 500mOhm @ 2.8A, 10V | 4V @ 250µA | 9.1nC @ 10V | ±20V | 240pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |