晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 354/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Diodes Incorporated |
MOSFET N-CH 60V 14.2A TO252 |
4,968 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 14.2A (Ta), 59A (Tc) | 4.5V, 10V | 10mOhm @ 13.5A, 10V | 2V @ 250µA | 33.5nC @ 10V | ±20V | 1925pF @ 30V | - | 3.2W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 80V 84A LFPAK |
3,744 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 84A (Tc) | 5V | 10mOhm @ 25A, 10V | 2.1V @ 1mA | 44.2nC @ 5V | ±10V | 6506pF @ 25V | - | 194W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
|
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ON Semiconductor |
MOSFET N-CH 40V 90A TO252 |
6,750 |
|
Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 10V | 3.2mOhm @ 80A, 10V | 4V @ 250µA | 46nC @ 10V | ±20V | 3130pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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ON Semiconductor |
MOSFET N-CH 40V 23A WDFN8 |
3,816 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 23A (Ta), 107A (Tc) | 4.5V, 10V | 3mOhm @ 40A, 10V | 2V @ 250µA | 35nC @ 10V | ±20V | 2100pF @ 25V | - | 3.3W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
|
|
|
ON Semiconductor |
MOSFET N-CH 100V 22A D-PAK |
7,650 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 22A (Tc) | 6V, 10V | 64mOhm @ 5.4A, 10V | 4V @ 250µA | 39nC @ 10V | ±20V | 1514pF @ 50V | - | 3.8W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 100A TDSON-8 |
5,112 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 28A (Ta), 100A (Tc) | 4.5V, 10V | 1.6mOhm @ 30A, 10V | 2V @ 250µA | 173nC @ 10V | ±20V | 13000pF @ 15V | - | 2.5W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
|
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|
Vishay Siliconix |
MOSFET N-CH 30V 60A PPAK SO-8 |
39,843 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 1.45mOhm @ 20A, 10V | 2.3V @ 250µA | 335nC @ 10V | ±20V | 10240pF @ 15V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
|
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|
Infineon Technologies |
MOSFET N-CH 25V 23A TSDSON-8 |
3,402 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 23A (Ta), 40A (Tc) | 4.5V, 10V | 1.8mOhm @ 30A, 10V | 2V @ 250µA | 39nC @ 10V | ±20V | 2800pF @ 12V | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CHANNEL 40V 80A DPAK |
3,492 |
|
Automotive, AEC-Q101, STripFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 2.8mOhm @ 40A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 4350pF @ 25V | - | 172W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 100V 5.6A D2PAK |
8,352 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 5.6A (Tc) | 10V | 540mOhm @ 3.4A, 10V | 4V @ 250µA | 8.3nC @ 10V | ±20V | 180pF @ 25V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Vishay Siliconix |
MOSFET N-CH 100V 27.5A PPAK SO-8 |
2,502 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 27.5A (Tc) | 4.5V, 10V | 23.5mOhm @ 10A, 10V | 2.8V @ 250µA | 23nC @ 10V | ±20V | 730pF @ 50V | - | 5W (Ta), 35.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Infineon Technologies |
MOSFET N-CH 60V 48A D2PAK |
7,686 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 48A (Tc) | 10V | 23mOhm @ 29A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 1360pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 40V 120A POWERFLAT |
8,388 |
|
Automotive, AEC-Q101, STripFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 2.5mOhm @ 16A, 10V | 4V @ 250µA | 29nC @ 10V | ±20V | 2300pF @ 25V | - | 111W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
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ON Semiconductor |
MOSFET N-CH 100V 12A POWER56 |
5,202 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 12A (Ta), 49A (Tc) | 4.5V, 10V | 8mOhm @ 12A, 10V | 3V @ 250µA | 60nC @ 10V | ±20V | 3710pF @ 50V | - | 2.5W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 80V 95A 8TDSON |
7,272 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 95A (Tc) | 6V, 10V | 5.2mOhm @ 47.5A, 10V | 3.8V @ 49µA | 40nC @ 10V | ±20V | 2900pF @ 40V | - | 2.5W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET P-CH 60V 5.1A DPAK |
6,516 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 5.1A (Tc) | 10V | 500mOhm @ 3.1A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 270pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
N-CHANNEL 500 V, 0.35 OHM TYP., |
2,232 |
|
MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 500V | 11A (Tc) | 10V | 350mOhm @ 5.5A, 10V | 5V @ 250µA | 16nC @ 10V | ±25V | 628pF @ 100V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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STMicroelectronics |
MOSFET N-CH 30V 35A POWERFLAT5X6 |
7,938 |
|
STripFET™ V | N-Channel | MOSFET (Metal Oxide) | 30V | 195A (Tc) | 4.5V, 10V | 1.75mOhm @ 17.5A, 10V | 2.2V @ 250µA | 40nC @ 4.5V | ±22V | 5800pF @ 25V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 700V 8.5A TO220 |
5,418 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 8.5A (Tc) | 10V | 600mOhm @ 1.8A, 10V | 3.5V @ 90µA | 10.5nC @ 10V | ±16V | 364pF @ 400V | - | 25W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 43A TO-220 |
8,586 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 43A (Ta) | 10V | 15mOhm @ 15A, 10V | 4V @ 200µA | 16nC @ 10V | ±20V | 1050pF @ 30V | - | 53W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
N-CHANNEL 60 V, 0.0028 OHM TYP., |
2,772 |
|
STripFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 10V | 3.2mOhm @ 40A, 10V | 4V @ 250µA | 55nC @ 10V | ±20V | 3100pF @ 25V | - | 158W (Tc) | 175°C (TJ) | Surface Mount | H2PAK-6 | TO-263-7, D²Pak (6 Leads + Tab) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 35A TO-220 |
4,536 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 80V | 35A (Tc) | 10V | 12.2mOhm @ 17.5A, 10V | 4V @ 300µA | 25nC @ 10V | ±20V | 1700pF @ 40V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 80V 100A POWERPAKSO |
8,154 |
|
TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Tc) | 7.5V, 10V | 2.9mOhm @ 20A, 10V | 3.4V @ 250µA | 81nC @ 7.5V | ±20V | 5150pF @ 40V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
|
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Vishay Siliconix |
MOSFET N-CH 200V 18A D2PAK |
2,232 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 70nC @ 10V | ±20V | 1300pF @ 25V | - | 3.1W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 80V 19.4A POWER56 |
6,084 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 19.4A (Ta), 100A (Tc) | 10V | 3.9mOhm @ 50A, 10V | 4.5V @ 250µA | 100nC @ 10V | ±20V | 7600pF @ 40V | - | 2.5W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
|
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Rohm Semiconductor |
MOSFET N-CH 250V 8A TO220 |
7,524 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 8A (Tc) | 10V | 600mOhm @ 4A, 10V | 5V @ 1mA | 15nC @ 10V | ±30V | 840pF @ 25V | - | 2.23W (Ta), 35W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 650V 1.8A IPAK |
4,896 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 1.8A (Tc) | 10V | 3Ohm @ 1.1A, 10V | 3.9V @ 80µA | 12.5nC @ 10V | ±20V | 200pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
|
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 100A DPAK |
8,100 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Ta) | 4.5V, 10V | 2.3mOhm @ 50A, 10V | 2.5V @ 500µA | 76nC @ 10V | ±20V | 5490pF @ 10V | - | 100W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 250V 25A |
5,400 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 250V | 25A (Tc) | 10V | 60mOhm @ 25A, 10V | 4V @ 90µA | 29nC @ 10V | ±20V | 2350pF @ 100V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 80V 130A |
4,860 |
|
Automotive, AEC-Q101, STripFET™ F7 | N-Channel | MOSFET (Metal Oxide) | 80V | 130A (Tc) | 10V | 3.6mOhm @ 13A, 10V | 4.5V @ 250µA | 103nC @ 10V | ±20V | 6800pF @ 40V | - | 4.8W (Ta), 135W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |