晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 357/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 600V 13A TO247-3 |
6,678 |
|
CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 180mOhm @ 5.3A, 10V | 4V @ 260µA | 24nC @ 10V | ±20V | 1080pF @ 400V | - | 68W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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STMicroelectronics |
N-CHANNEL 900 V, 0.60 OHM TYP., |
5,040 |
|
MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 900V | 8A (Tc) | 10V | - | 5V @ 100µA | - | ±30V | - | - | 130W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 300V 36A TO-3P |
8,568 |
|
PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 300V | 36A (Tc) | 10V | 110mOhm @ 18A, 10V | 5.5V @ 250µA | 70nC @ 10V | ±30V | 2250pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
|
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STMicroelectronics |
MOSFET N-CH 80V 180A H2PAK-2 |
2,322 |
|
DeepGATE™, STripFET™ VII | N-Channel | MOSFET (Metal Oxide) | 80V | 180A (Tc) | 10V | 2.1mOhm @ 90A, 10V | 4V @ 250µA | 193nC @ 10V | ±20V | 13600pF @ 50V | - | 315W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | H²PAK | TO-263-3, D²Pak (2 Leads + Tab) Variant |
|
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|
Infineon Technologies |
MOSFET N-CH 650V 18A TO220 |
2,952 |
|
CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 18A (Tc) | 10V | 125mOhm @ 8.9A, 10V | 4V @ 440µA | 35nC @ 10V | ±20V | 1670pF @ 400V | - | 101W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
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Vishay Siliconix |
MOSFET N-CH 200V 57A TO220AB |
5,310 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 57A (Tc) | 10V | 33mOhm @ 30A, 10V | 4V @ 250µA | 130nC @ 10V | ±20V | 5100pF @ 25V | - | 3.75W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 100V 130A TO-247 |
7,578 |
|
TrenchMV™ | N-Channel | MOSFET (Metal Oxide) | 100V | 130A (Tc) | 10V | 9.1mOhm @ 25A, 10V | 4.5V @ 250µA | 104nC @ 10V | ±20V | 5080pF @ 25V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 27.6A TO-220SIS |
8,676 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 27.6A (Ta) | 10V | 110mOhm @ 13.8A, 10V | 3.5V @ 1.6mA | 75nC @ 10V | ±30V | 3000pF @ 300V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
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|
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 30.8A TO-220 |
5,310 |
|
DTMOSIV-H | N-Channel | MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 88mOhm @ 9.4A, 10V | 3.5V @ 1.5mA | 65nC @ 10V | ±30V | 3000pF @ 300V | Super Junction | 230W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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|
STMicroelectronics |
MOSFET N-CH 600V 29A D2PAK |
5,994 |
|
FDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 29A (Tc) | 10V | 110mOhm @ 14.5A, 10V | 5V @ 250µA | 80.4nC @ 10V | ±25V | 2785pF @ 50V | - | 190W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 500V 26A TO-3P |
5,400 |
|
PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 500V | 26A (Tc) | 10V | 230mOhm @ 13A, 10V | 5.5V @ 250µA | 65nC @ 10V | ±30V | 3600pF @ 25V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 100V 180A TO-247 |
7,326 |
|
TrenchMV™ | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 6.4mOhm @ 25A, 10V | 4.5V @ 250µA | 151nC @ 10V | ±30V | 6900pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
60V/270A TRENCHT3 HIPERFET MOSFE |
3,438 |
|
HiperFET™, TrenchT3™ | N-Channel | MOSFET (Metal Oxide) | 60V | 270A (Tc) | 10V | 3.1mOhm @ 100A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 12600pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 100V 200A TO-3P |
6,372 |
|
TrenchMV™ | N-Channel | MOSFET (Metal Oxide) | 100V | 200A (Tc) | 10V | 5.5mOhm @ 50A, 10V | 4.5V @ 250µA | 152nC @ 10V | ±30V | 9400pF @ 25V | - | 550W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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STMicroelectronics |
MOSFET N-CH 400V 38A |
7,578 |
|
Automotive, AEC-Q101, MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 400V | 38A (Tc) | 10V | 72mOhm @ 19A, 10V | 5V @ 250µA | 56nC @ 10V | ±25V | 2600pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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IXYS |
MOSFET N-CH 1000V 6A TO220AB |
5,058 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1000V | 6A (Tc) | - | 2.2Ohm @ 3A, 0V | - | 95nC @ 5V | ±20V | 2650pF @ 25V | Depletion Mode | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Microsemi |
MOSFET N-CH 800V 11A TO-247 |
8,208 |
|
- | N-Channel | MOSFET (Metal Oxide) | 800V | 11A (Tc) | 10V | 450mOhm @ 7.1A, 10V | 3.9V @ 680µA | 60nC @ 10V | ±20V | 1585pF @ 25V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
|
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STMicroelectronics |
MOSFET N-CH 800V 11A TO220FP |
3,726 |
|
MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 800V | 11A (Tc) | 10V | 400mOhm @ 5.5A, 10V | 5V @ 250µA | 43.6nC @ 10V | ±30V | 1630pF @ 25V | - | 35W (Tc) | -65°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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IXYS |
MOSFET P-CH 200V 26A TO-247 |
8,478 |
|
PolarP™ | P-Channel | MOSFET (Metal Oxide) | 200V | 26A (Tc) | 10V | 170mOhm @ 13A, 10V | 4V @ 250µA | 56nC @ 10V | ±20V | 2740pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
|
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Microsemi |
MOSFET N-CH 500V 24A TO-247 |
4,752 |
|
POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 500V | 24A (Tc) | 10V | 240mOhm @ 11A, 10V | 5V @ 1mA | 90nC @ 10V | ±30V | 3630pF @ 25V | - | 335W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 500V 30A TO-247 |
5,940 |
|
POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 500V | 30A (Tc) | 10V | 190mOhm @ 14A, 10V | 5V @ 1mA | 115nC @ 10V | ±30V | 4525pF @ 25V | - | 415W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V 24.3A TO-247 |
4,482 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 24.3A (Tc) | 10V | 160mOhm @ 15.4A, 10V | 3.9V @ 1.2mA | 135nC @ 10V | ±20V | 3000pF @ 25V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
|
|
|
STMicroelectronics |
MOSFET N-CH 800V 17A TO-247 |
4,212 |
|
MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 800V | 17A (Tc) | 10V | 295mOhm @ 8.5A, 10V | 5V @ 250µA | 70nC @ 10V | ±30V | 2070pF @ 50V | - | 190W (Tc) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
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Rohm Semiconductor |
MOSFET N-CH 600V 20A TO-220FM |
4,608 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 250mOhm @ 10A, 10V | 5V @ 1mA | 65nC @ 10V | ±30V | 2040pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V 48A TO247-3 |
3,258 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 48A (Tc) | 10V | 60mOhm @ 15.9A, 10V | 4V @ 800µA | 67nC @ 10V | ±20V | 2895pF @ 400V | - | 164W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
|
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IXYS |
850V/20A ULTRA JUNCTION X-CLASS |
4,014 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 850V | 20A (Tc) | 10V | 330mOhm @ 500mA, 10V | 5.5V @ 2.5mA | 63nC @ 10V | ±30V | 1660pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
|
|
Microsemi |
MOSFET N-CH 1200V 7A TO-247 |
6,084 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1200V | 7A (Tc) | 10V | 2.9Ohm @ 3A, 10V | 5V @ 1mA | 80nC @ 10V | ±30V | 2565pF @ 25V | - | 335W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
|
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IXYS |
MOSFET N-CH 600V 50A TO247 |
4,230 |
|
HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 600V | 50A (Tc) | 10V | 145mOhm @ 500mA, 10V | 5V @ 4mA | 94nC @ 10V | ±30V | 6300pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
|
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IXYS |
MOSFET P-CH 200V 24A TO-247AD |
7,380 |
|
- | P-Channel | MOSFET (Metal Oxide) | 200V | 24A (Tc) | 10V | 150mOhm @ 500mA, 10V | 5V @ 250µA | 150nC @ 10V | ±20V | 4200pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 650V 62A TO-247 |
2,124 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 62A (Tc) | 10V | 52mOhm @ 31A, 10V | 4.5V @ 4mA | 104nC @ 10V | ±30V | 5940pF @ 25V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |