晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 355/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
4,554 |
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U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 40V | 82A (Tc) | 4.5V, 10V | 3.8mOhm @ 30A, 4.5V | 2.4V @ 500µA | 63.4nC @ 10V | ±20V | 4670pF @ 20V | - | 36W (Tc) | 175°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 40V 200A POWERPAK8 |
2,790 |
|
Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 200A (Tc) | 4.5V, 10V | 1.2mOhm @ 20A, 10V | 2.5V @ 250µA | 220nC @ 10V | ±20V | 14500pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 60V 15A TO-220F |
5,994 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 15A (Tc) | 10V | 60mOhm @ 7.5A, 10V | 4V @ 250µA | 15nC @ 10V | ±25V | 590pF @ 25V | - | 30W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
|
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|
Infineon Technologies |
MOSFET N-CH 800V 4A TO220 |
6,462 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 4A (Tc) | 10V | 1.4Ohm @ 1.4A, 10V | 3.5V @ 700µA | 10nC @ 10V | ±20V | 250pF @ 500V | Super Junction | 24W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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|
Rohm Semiconductor |
MOSFET N-CH 600V 20A LPT |
3,168 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 196mOhm @ 9.5A, 10V | 4V @ 1mA | 60nC @ 10V | ±20V | 1400pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Surface Mount | LPTS (D2PAK) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N CH 60V 58A TO-220 |
7,560 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 58A (Ta) | 10V | 5.4mOhm @ 29A, 10V | 4V @ 500µA | 46nC @ 10V | ±20V | 3400pF @ 30V | - | 110W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 58A TO-220 |
8,874 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 58A (Tc) | 10V | 5.4mOhm @ 29A, 10V | 4V @ 500µA | 46nC @ 10V | ±20V | 3400pF @ 30V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
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Toshiba Semiconductor and Storage |
MOSFET N CH 100V 52A TO220 |
8,442 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 52A (Tc) | 10V | 13.8mOhm @ 11A, 10V | 4V @ 300µA | 28nC @ 10V | ±20V | 1800pF @ 50V | - | 72W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 52A TO-220 |
5,526 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 22A (Tc) | 10V | 13.8mOhm @ 11A, 10V | 4V @ 300µA | 28nC @ 10V | ±20V | 1800pF @ 50V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 75A TO-220 |
8,028 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 9.5mOhm @ 17A, 10V | 4V @ 500µA | 38nC @ 10V | ±20V | 2600pF @ 50V | - | 103W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 60V 80A H2PAK-2 |
2,574 |
|
DeepGATE™, STripFET™ VII | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 10V | 3mOhm @ 40A, 10V | 4V @ 250µA | 40nC @ 10V | ±20V | 2700pF @ 25V | - | 158W (Tc) | 175°C (TJ) | Surface Mount | H2Pak-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 75V 28A PPAK SO-8 |
2,052 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 28A (Tc) | 10V | 11mOhm @ 15A, 10V | 2.5V @ 250µA | 100nC @ 10V | ±20V | 2900pF @ 35V | - | 5.4W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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ON Semiconductor |
MOSFET N-CH 100V 151A 8PQFN |
3,366 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 151A (Tc) | 6V, 10V | 3.2mOhm @ 67A, 10V | 4V @ 370µA | 54nC @ 6V | ±20V | 6215pF @ 50V | - | 138W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CHANNEL 800V 6A TO220 |
5,238 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 900mOhm @ 2.2A, 10V | 3.5V @ 110µA | 15nC @ 10V | ±20V | 350pF @ 500V | - | 26W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 34A TO-220 |
6,564 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 34A (Tc) | 10V | 9.5mOhm @ 17A, 10V | 4V @ 500µA | 38nC @ 10V | ±20V | 2600pF @ 50V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Diodes Incorporated |
MOSFET 100V 108A TO220AB |
6,462 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 108A (Tc) | 10V | 9.5mOhm @ 13A, 10V | 3.5V @ 250µA | 53.7nC @ 10V | ±20V | 2592pF @ 50V | - | 2.4W (Ta), 166W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5.2A TO-220SIS |
6,408 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 5.2A (Ta) | 10V | 1.2Ohm @ 2.6A, 10V | 3.5V @ 170µA | 10.5nC @ 10V | ±30V | 380pF @ 300V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V TO220SIS |
5,382 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Ta) | 10V | 750mOhm @ 5A, 10V | 4V @ 1mA | 40nC @ 10V | ±30V | 1300pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Microchip Technology |
MOSFET N-CH 120V 0.23A TO92-3 |
2,268 |
|
- | N-Channel | MOSFET (Metal Oxide) | 120V | 230mA (Tj) | 2.5V, 10V | 6Ohm @ 500mA, 10V | 2V @ 1mA | - | ±30V | 125pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Infineon Technologies |
MOSFET N-CH 60V 90A TO220-3 |
5,004 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 4.5V, 10V | 3.7mOhm @ 90A, 10V | 2.2V @ 93µA | 79nC @ 4.5V | ±20V | 13000pF @ 30V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CHANNEL 800V 8A TO220 |
8,694 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 8A (Tc) | 10V | 600mOhm @ 3.4A, 10V | 3.5V @ 170µA | 20nC @ 10V | ±20V | 570pF @ 500V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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STMicroelectronics |
N-CHANNEL 900 V, 0.25 OHM TYP., |
3,960 |
|
MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 900V | 3A (Tc) | 10V | 2.1Ohm @ 1A, 10V | 5V @ 100µA | 5.3nC @ 10V | ±30V | 173pF @ 100V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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|
IXYS |
MOSFET N-CH 100V 44A TO-252 |
6,750 |
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TrenchMV™ | N-Channel | MOSFET (Metal Oxide) | 100V | 44A (Tc) | 10V | 30mOhm @ 22A, 10V | 4.5V @ 25µA | 33nC @ 10V | ±30V | 1262pF @ 25V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 600V 10A TO-220 |
6,786 |
|
UniFET-II™ | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 750mOhm @ 5A, 10V | 5V @ 250µA | 30nC @ 10V | ±25V | 1475pF @ 25V | - | 185W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V IPAK |
6,246 |
|
MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 7.5A (Tc) | 10V | 600mOhm @ 3A, 10V | 4V @ 250µA | 13.5nC @ 10V | ±25V | 400pF @ 100V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
|
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STMicroelectronics |
MOSFET N-CHANNEL 40V 120A TO220 |
4,356 |
|
STripFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 2.2mOhm @ 60A, 10V | 4V @ 250µA | 67nC @ 10V | ±20V | 5600pF @ 25V | - | 235W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 11A ITO220S |
2,916 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 380mOhm @ 2.7A, 10V | 4V @ 250µA | 21nC @ 10V | ±30V | 810pF @ 100V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220S | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 60V 120A D2PAK |
8,082 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 4.5V, 10V | 2.1mOhm @ 30A, 10V | 2.5V @ 250µA | 126nC @ 10V | ±20V | 11113pF @ 30V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 100V 120A D2PAK |
8,874 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 7.5V, 10V | 3.8mOhm @ 20A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 5100pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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Vishay Siliconix |
MOSFET N-CH 100V 120A D2PAK |
8,712 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 7.5V, 10V | 4mOhm @ 20A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 5100pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |