晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 500/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET P-CH TO263-3 |
6,930 |
|
Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 3.5mOhm @ 100A, 10V | 4V @ 340µA | 205nC @ 10V | ±20V | 14790pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH TO262-3 |
5,904 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 80A (Tc) | 10V | 5.8mOhm @ 80A, 10V | 4V @ 90µA | 70nC @ 10V | ±20V | 4800pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 100V 1A SAWN ON FOIL |
7,110 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 1A (Tj) | 10V | 100mOhm @ 2A, 10V | 3.5V @ 150µA | - | - | - | - | - | - | Surface Mount | Sawn on foil | Die |
|
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Infineon Technologies |
MOSFET N-CH 150V 41A D2PAK |
5,058 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 41A (Tc) | 10V | 45mOhm @ 25A, 10V | 5.5V @ 250µA | 110nC @ 10V | ±30V | 2520pF @ 25V | - | 3.1W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 800V 11A TO220 |
5,904 |
|
SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 800V | 11A (Tc) | 10V | 400mOhm @ 5.5A, 10V | 4.5V @ 1.1mA | 56nC @ 10V | ±20V | 2350pF @ 100V | - | 35.7W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
|
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|
Infineon Technologies |
MOSFET P-CH 55V 42A D2PAK |
6,534 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 20mOhm @ 42A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 3500pF @ 25V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 195A TO262 |
2,718 |
|
HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 6V, 10V | 1.6mOhm @ 100A, 10V | 3.9V @ 250µA | 324nC @ 10V | ±20V | 10820pF @ 25V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 55V 51A D2PAK |
8,676 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 51A (Tc) | 10V | 13.9mOhm @ 31A, 10V | 4V @ 250µA | 43nC @ 10V | ±20V | 1420pF @ 25V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor |
MOSFET N-CH 60V 19A TO220F |
2,754 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 19A (Ta), 92A (Tc) | 6V, 10V | 2.6mOhm @ 20A, 10V | 3.2V @ 250µA | 210nC @ 10V | ±20V | 11800pF @ 30V | - | 1.9W (Ta), 46.5W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5.8A TO-220SIS |
8,802 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 5.8A (Ta) | 10V | 1Ohm @ 2.9A, 10V | 3.5V @ 180µA | 11nC @ 10V | ±30V | 390pF @ 300V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 900V 1.7A D2PAK |
7,200 |
|
- | N-Channel | MOSFET (Metal Oxide) | 900V | 1.7A (Tc) | 10V | 8Ohm @ 1A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 490pF @ 25V | - | 3.1W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 30A D2PAK |
2,124 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 10V | 50mOhm @ 18A, 10V | 4V @ 250µA | 46nC @ 10V | ±20V | 1200pF @ 25V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor |
MOSFET NCH 100V 105A TO262 |
2,466 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 14.5A (Ta), 105A (Tc) | 10V | 4.1mOhm @ 20A, 10V | 3.4V @ 250µA | 126nC @ 10V | ±20V | 6775pF @ 50V | - | 1.9W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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IXYS |
MOSFET N-CH 800V 0.1A TO-252AA |
5,850 |
|
- | N-Channel | MOSFET (Metal Oxide) | 800V | 100mA (Tc) | 10V | 50Ohm @ 100mA, 10V | 4.5V @ 25µA | 8nC @ 10V | ±20V | 60pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 60V 17A D2PAK |
2,286 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Tc) | 10V | 100mOhm @ 10A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 640pF @ 25V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 17A D2PAK |
8,874 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Tc) | 10V | 100mOhm @ 10A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 640pF @ 25V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Microchip Technology |
MOSFET N-CH 400V 260MA 8SOIC |
7,506 |
|
- | N-Channel | MOSFET (Metal Oxide) | 400V | 260mA (Tj) | 4.5V, 10V | 5Ohm @ 500mA, 10V | 2V @ 2mA | - | ±20V | 225pF @ 25V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 100V 75A TO220AB |
6,696 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 10mOhm @ 58A, 10V | 4V @ 150µA | 180nC @ 10V | ±20V | 5150pF @ 50V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 13A 4VSON |
3,906 |
|
CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 185mOhm @ 5.3A, 10V | 4V @ 260µA | 24nC @ 10V | ±20V | 1080pF @ 400V | - | 77W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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Infineon Technologies |
MOSFET N-CH 650V 11.4A TO220 |
8,712 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 11.4A (Tc) | 10V | 310mOhm @ 4.4A, 10V | 4.5V @ 440µA | 41nC @ 10V | ±20V | 1100pF @ 100V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
LOW POWER_LEGACY |
3,438 |
|
CoolMOS™ CFD2 | N-Channel | MOSFET (Metal Oxide) | 650V | 11.4A (Tc) | 10V | 310mOhm @ 4.4A, 10V | 4.5V @ 400µA | 41nC @ 10V | ±20V | 1100pF @ 100V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
LOW POWER_LEGACY |
6,642 |
|
CoolMOS™ CFD2 | N-Channel | MOSFET (Metal Oxide) | 650V | 11.4A (Tc) | 10V | 310mOhm @ 4.4A, 10V | 4.5V @ 400µA | 41nC @ 10V | ±20V | 1100pF @ 100V | - | 104.2W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
3,402 |
|
Automotive, AEC-Q101, CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 299mOhm @ 6.6A, 10V | 3.5V @ 440µA | 29nC @ 10V | ±20V | 1100pF @ 100V | - | 96W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
MOSFET N-CH 55V 75A D2PAK |
4,230 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 8mOhm @ 50A, 10V | 4V @ 1mA | 116nC @ 10V | ±20V | 4200pF @ 25V | Current Sensing | 272W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 20A TO262 |
7,110 |
|
aMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 199mOhm @ 10A, 10V | 4.1V @ 250µA | 19.8nC @ 10V | ±30V | 1038pF @ 100V | - | 266W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 20A TO262F |
7,722 |
|
aMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 199mOhm @ 10A, 10V | 4.1V @ 250µA | 19.8nC @ 10V | ±30V | 1038pF @ 100V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | - | TO-262-3 Full Pack, I²Pak |
|
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Alpha & Omega Semiconductor |
MOSFET N-CH 100V 105A TO220F |
4,806 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 14.5A (Ta), 105A (Tc) | 6V, 10V | 4.5mOhm @ 20A, 10V | 3.4V @ 250µA | 126nC @ 10V | ±20V | 6775pF @ 50V | - | 2.1W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 100V 70A TO220F |
4,248 |
|
AlphaSGT™ | N-Channel | MOSFET (Metal Oxide) | 100V | 70A (Tc) | 6V, 10V | 4.5mOhm @ 20A, 10V | 3.4V @ 250µA | 126nC @ 10V | ±20V | 6775pF @ 50V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Renesas Electronics America |
MOSFET N-CH 100V 50A TO220 |
2,970 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 50A (Ta) | 10V | 11mOhm @ 25A, 10V | - | 59nC @ 10V | ±20V | 4150pF @ 10V | - | 125W (Tc) | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 60V 50A TO252 |
7,056 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 15mOhm @ 17A, 10V | 3V @ 250µA | 165nC @ 10V | ±20V | 4950pF @ 25V | - | 3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |