晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 614/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET P-CH 55V 18A I-PAK |
6,984 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 18A (Tc) | 10V | 110mOhm @ 9.6A, 10V | 4V @ 250µA | 32nC @ 10V | ±20V | 650pF @ 25V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET P-CH 60V 5.1A I-PAK |
3,834 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 5.1A (Tc) | 10V | 500mOhm @ 3.1A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 270pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET P-CH 50V 9.9A I-PAK |
7,452 |
|
- | P-Channel | MOSFET (Metal Oxide) | 50V | 9.9A (Tc) | 10V | 280mOhm @ 5.7A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 490pF @ 25V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
|
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|
Vishay Siliconix |
MOSFET P-CH 60V 8.8A I-PAK |
8,226 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 8.8A (Tc) | 10V | 280mOhm @ 5.3A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 570pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
Vishay Siliconix |
MOSFET P-CH 100V 3.1A I-PAK |
3,454 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 3.1A (Tc) | 10V | 1.2Ohm @ 1.9A, 10V | 4V @ 250µA | 8.7nC @ 10V | ±20V | 200pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET P-CH 100V 5.6A I-PAK |
4,950 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 5.6A (Tc) | 10V | 600mOhm @ 3.4A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 390pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
|
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|
Infineon Technologies |
MOSFET P-CH 100V 6.6A I-PAK |
5,922 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 6.6A (Tc) | 10V | 480mOhm @ 3.9A, 10V | 4V @ 250µA | 27nC @ 10V | ±20V | 350pF @ 25V | - | 40W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET P-CH 200V 1.9A I-PAK |
7,326 |
|
- | P-Channel | MOSFET (Metal Oxide) | 200V | 1.9A (Tc) | 10V | 3Ohm @ 1.1A, 10V | 4V @ 250µA | 8.9nC @ 10V | ±20V | 170pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
|
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Vishay Siliconix |
MOSFET P-CH 200V 3.6A I-PAK |
6,012 |
|
- | P-Channel | MOSFET (Metal Oxide) | 200V | 3.6A (Tc) | 10V | 1.5Ohm @ 2.2A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 340pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 60V 10A D2PAK |
8,316 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 10A (Tc) | 10V | 200mOhm @ 6A, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 300pF @ 25V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 17A D2PAK |
6,426 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Tc) | 10V | 100mOhm @ 10A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 640pF @ 25V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 50V 30A TO-220AB |
2,100 |
|
- | N-Channel | MOSFET (Metal Oxide) | 50V | 30A (Tc) | 10V | 50mOhm @ 16A, 10V | 4V @ 250µA | 30nC @ 10V | ±20V | 1600pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 30A TO-220AB |
7,848 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 10V | 50mOhm @ 18A, 10V | 4V @ 250µA | 46nC @ 10V | ±20V | 1200pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 29A D2PAK |
3,474 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 29A (Tc) | 10V | 40mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | ±20V | 700pF @ 25V | - | 3.8W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 29A D2PAK |
5,832 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 29A (Tc) | 10V | 40mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | ±20V | 700pF @ 25V | - | 3.8W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 50A TO220AB |
5,814 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 28mOhm @ 31A, 10V | 4V @ 250µA | 67nC @ 10V | ±20V | 1900pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
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Infineon Technologies |
MOSFET N-CH 60V 48A D2PAK |
2,286 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 48A (Tc) | 10V | 23mOhm @ 29A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 1360pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 49A TO-262 |
6,912 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 49A (Tc) | 10V | 17.5mOhm @ 25A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1470pF @ 25V | - | 3.8W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 60V 50A D2PAK |
4,698 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 28mOhm @ 31A, 10V | 4V @ 250µA | 67nC @ 10V | ±20V | 1900pF @ 25V | - | 3.7W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
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Vishay Siliconix |
MOSFET N-CH 60V 50A D2PAK |
2,232 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 28mOhm @ 31A, 10V | 4V @ 250µA | 67nC @ 10V | ±20V | 1900pF @ 25V | - | 3.7W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 53A D2PAK |
5,166 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 53A (Tc) | 10V | 16.5mOhm @ 28A, 10V | 4V @ 250µA | 72nC @ 10V | ±20V | 1696pF @ 25V | - | 3.8W (Ta), 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 64A D2PAK |
5,796 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 64A (Tc) | 10V | 14mOhm @ 32A, 10V | 4V @ 250µA | 81nC @ 10V | ±20V | 1970pF @ 25V | - | 3.8W (Ta), 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
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Infineon Technologies |
MOSFET N-CH 55V 64A D2PAK |
4,374 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 64A (Tc) | 10V | 14mOhm @ 32A, 10V | 4V @ 250µA | 81nC @ 10V | ±20V | 1970pF @ 25V | - | 3.8W (Ta), 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Infineon Technologies |
MOSFET N-CH 40V 130A TO-220AB |
5,814 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 130A (Tc) | 4.5V, 10V | 6.5mOhm @ 78A, 10V | 1V @ 250µA | 100nC @ 4.5V | ±16V | 5330pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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|
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Infineon Technologies |
MOSFET N-CH 40V 130A D2PAK |
3,852 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 130A (Tc) | 4.5V, 10V | 6.5mOhm @ 78A, 10V | 1V @ 250µA | 100nC @ 4.5V | ±16V | 5330pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Infineon Technologies |
MOSFET N-CH 30V 116A D2PAK |
2,304 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 116A (Tc) | 4.5V, 10V | 7mOhm @ 60A, 10V | 3V @ 250µA | 60nC @ 4.5V | ±16V | 3290pF @ 25V | - | 3.8W (Ta), 180W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 104A D2PAK |
7,902 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 104A (Tc) | 4V, 10V | 8mOhm @ 54A, 10V | 2V @ 250µA | 130nC @ 5V | ±16V | 5000pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 61A TO-220AB |
3,294 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 61A (Tc) | 4.5V, 7V | 13mOhm @ 37A, 7V | 700mV @ 250µA | 58nC @ 4.5V | ±10V | 2500pF @ 15V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 20V 61A D2PAK |
3,384 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 61A (Tc) | 4.5V, 7V | 13mOhm @ 37A, 7V | 700mV @ 250µA | 58nC @ 4.5V | ±10V | 2500pF @ 15V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 64A TO-262 |
3,726 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 64A (Tc) | 4.5V, 10V | 12mOhm @ 34A, 10V | 1V @ 250µA | 33nC @ 4.5V | ±16V | 1650pF @ 25V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |