晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 749/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET P-CH 60V 30A IPAK |
4,410 |
|
SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 10V | 75mOhm @ 21.5A, 10V | 4V @ 1.7mA | 48nC @ 10V | ±20V | 1535pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 650V 11A TO-247 |
7,074 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 380mOhm @ 7A, 10V | 3.9V @ 500µA | 60nC @ 10V | ±20V | 1200pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V 11A TO-247 |
8,676 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 440mOhm @ 7A, 10V | 5V @ 500µA | 64nC @ 10V | ±20V | 1200pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
|
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|
Infineon Technologies |
MOSFET N-CH 600V 11A TO-247 |
6,534 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 380mOhm @ 7A, 10V | 5.5V @ 500µA | 54nC @ 10V | ±20V | 1460pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
|
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|
Infineon Technologies |
MOSFET N-CH 800V 17A TO-247 |
3,924 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 17A (Tc) | 10V | 290mOhm @ 11A, 10V | 3.9V @ 1mA | 177nC @ 10V | ±20V | 2320pF @ 25V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
|
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|
Infineon Technologies |
MOSFET N-CH 560V 52A TO-247 |
6,876 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 560V | 52A (Tc) | 10V | 70mOhm @ 30A, 10V | 3.9V @ 2.7mA | 290nC @ 10V | ±20V | 6800pF @ 25V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Renesas Electronics America |
MOSFET P-CH 60V 15A 4LDPAK |
4,194 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 15A (Ta) | 4V, 10V | 90mOhm @ 7.5A, 10V | - | - | +3V, -16V | - | - | 50W (Tc) | 150°C (TJ) | Surface Mount | 4-LDPAK | SC-83 |
|
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|
Renesas Electronics America |
MOSFET N-CH 200V 2A 8SOP |
5,562 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 2A (Ta) | 10V | 440mOhm @ 1A, 10V | - | 13nC @ 10V | ±30V | 450pF @ 25V | - | 2.5W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Renesas Electronics America |
MOSFET N-CH 100V 25A 5LFPAK |
6,300 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 25A (Ta) | 7V, 10V | 16mOhm @ 12.5A, 10V | - | 105nC @ 10V | ±20V | 6500pF @ 10V | - | 30W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 30V 40A 5LFPAK |
3,276 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Ta) | 4.5V, 10V | 6.1mOhm @ 20A, 10V | - | 40nC @ 10V | ±20V | 2450pF @ 10V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
|
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|
Renesas Electronics America |
MOSFET N-CH 30V 60A 5LFPAK |
3,132 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Ta) | 4.5V, 10V | 3.1mOhm @ 30A, 10V | - | 50nC @ 4.5V | ±20V | 7600pF @ 10V | - | 30W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
|
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Renesas Electronics America |
MOSFET N-CH 40V 40A 5LFPAK |
8,442 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 40A (Ta) | 7V, 10V | 4.8mOhm @ 20A, 10V | - | 52nC @ 10V | ±20V | 3750pF @ 10V | - | 25W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
|
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Renesas Electronics America |
MOSFET N-CH 100V 20A 5LFPAK |
8,442 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 20A (Ta) | 8V, 10V | 27mOhm @ 10A, 10V | - | 33.5nC @ 10V | ±20V | 2280pF @ 10V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 30V 45A LFPAK |
8,838 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 45A (Ta) | 4.5V, 10V | 3.8mOhm @ 22.5A, 10V | - | 27nC @ 4.5V | ±20V | 4400pF @ 10V | - | 25W (Tc) | 150°C (TJ) | Surface Mount | 5-LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 80V 25A 5LFPAK |
7,974 |
|
- | N-Channel | MOSFET (Metal Oxide) | 80V | 25A (Ta) | 6V, 10V | 16mOhm @ 12.5A, 10V | - | 30nC @ 10V | ±20V | 2150pF @ 10V | - | 25W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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ON Semiconductor |
MOSFET N-CH 280V 75A TO-3P |
8,388 |
|
UniFET™ | N-Channel | MOSFET (Metal Oxide) | 280V | 75A (Tc) | 10V | 41mOhm @ 37.5A, 10V | 5V @ 250µA | 144nC @ 10V | ±30V | 6700pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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ON Semiconductor |
MOSFET N-CH 300V 34A TO-3PF |
3,474 |
|
UniFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 34A (Tc) | 10V | 56mOhm @ 17A, 10V | 5V @ 250µA | 100nC @ 10V | ±30V | 4670pF @ 25V | - | 161W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 280V 36A TO-3PF |
7,884 |
|
UniFET™ | N-Channel | MOSFET (Metal Oxide) | 280V | 36A (Tc) | 10V | 51mOhm @ 18A, 10V | 5V @ 250µA | 100nC @ 10V | ±30V | 4630pF @ 25V | - | 165W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 280V 46A TO-3PF |
2,898 |
|
UniFET™ | N-Channel | MOSFET (Metal Oxide) | 280V | 46A (Tc) | 10V | 41mOhm @ 23A, 10V | 5V @ 250µA | 144nC @ 10V | ±30V | 6700pF @ 25V | - | 215W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 500V 380MA TO-92 |
2,556 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 380mA (Tc) | 10V | 6Ohm @ 190mA, 10V | 4V @ 250µA | 6.4nC @ 10V | ±30V | 195pF @ 25V | - | 890mW (Ta), 2.08W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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ON Semiconductor |
MOSFET N-CH 500V 6A DPAK |
7,362 |
|
UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 6A (Tc) | 10V | 900mOhm @ 3A, 10V | 5V @ 250µA | 16.6nC @ 10V | ±30V | 940pF @ 25V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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ON Semiconductor |
MOSFET N-CH 330V 25A D2PAK |
5,220 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 330V | 25A (Tc) | 10V | 230mOhm @ 12.5A, 10V | 5V @ 250µA | 75nC @ 15V | ±30V | 2010pF @ 25V | - | 3.1W (Ta), 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 650V 7A D2PAK |
3,526 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 1.4Ohm @ 3.5A, 10V | 4V @ 250µA | 36nC @ 10V | ±30V | 1245pF @ 25V | - | 173W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 30V 17A POWER56 |
2,052 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 17A (Ta), 35A (Tc) | 4.5V, 10V | 5mOhm @ 17A, 10V | 3V @ 1mA | 47nC @ 10V | ±20V | 2515pF @ 15V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
|
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Infineon Technologies |
MOSFET N-CH 650V 3.2A TO-220 |
4,374 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 3.2A (Tc) | 10V | 1.4Ohm @ 2A, 10V | 3.9V @ 135µA | 17nC @ 10V | ±20V | 400pF @ 25V | - | 29.7W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 650V 7.3A TO-220 |
6,768 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 350µA | 27nC @ 10V | ±20V | 790pF @ 25V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
|
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|
Infineon Technologies |
MOSFET P-CH 20V 390MA SC75 |
7,686 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 20V | 390mA (Ta) | 2.5V, 4.5V | 1.2Ohm @ 390mA, 4.5V | 1.2V @ 1.5µA | 0.62nC @ 4.5V | ±12V | 56pF @ 15V | - | 250mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SC-75 | SC-75, SOT-416 |
|
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Infineon Technologies |
MOSFET N-CH 25V 100A TDSON-8 |
3,006 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 30A (Ta), 100A (Tc) | 4.5V, 10V | 2mOhm @ 50A, 10V | 2V @ 110µA | 66nC @ 5V | ±20V | 8290pF @ 15V | - | 2.8W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 25V 100A TDSON-8 |
3,454 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 24A (Ta), 100A (Tc) | 4.5V, 10V | 2.9mOhm @ 50A, 10V | 2V @ 80µA | 41nC @ 5V | ±20V | 5090pF @ 15V | - | 2.8W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 25V 89A TDSON-8 |
7,200 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 19A (Ta), 89A (Tc) | 4.5V, 10V | 4.8mOhm @ 50A, 10V | 2V @ 35µA | 21nC @ 5V | ±20V | 2670pF @ 15V | - | 2.8W (Ta), 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |