晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 953/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
MOSFET NCH 600V 10.6A TO252 |
3,348 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 3.5V @ 300µA | 32nC @ 10V | ±20V | 700pF @ 100V | Super Junction | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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|
Infineon Technologies |
MOSFET N-CH 800V TO251-3 |
5,562 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 1.9A (Tc) | 10V | 2.8Ohm @ 1.1A, 10V | 3.9V @ 120µA | 12nC @ 10V | ±20V | 290pF @ 100V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 800V TO251-3 |
7,344 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 3.9A (Tc) | 10V | 1.4Ohm @ 2.3A, 10V | 3.9V @ 240µA | 23nC @ 10V | ±20V | 570pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
|
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|
ON Semiconductor |
MOSFET N-CH 60V 37A 8WDFN |
2,880 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 11A (Ta) | 4.5V, 10V | 11.5mOhm @ 8.7A, 10V | 2.3V @ 250µA | 28nC @ 10V | ±20V | 1462pF @ 25V | - | 3.2W (Ta), 21W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
|
|
|
Diodes Incorporated |
MOSFET NCH 600V 4.5A TO220 |
6,642 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 4.5A (Ta) | 10V | 2.5Ohm @ 2A, 10V | 4.5V @ 250µA | 14.3nC @ 10V | ±30V | 532pF @ 25V | - | 113W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
Diodes Incorporated |
MOSFET NCH 600V 3A TO251 |
3,258 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 3A (Tc) | 10V | 2.5Ohm @ 2A, 10V | 4.5V @ 250µA | 14.3nC @ 10V | ±30V | 532pF @ 25V | - | 41W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
Diodes Incorporated |
MOSFET NCH 100V 28A TO252 |
7,452 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | 28A (Tc) | 6V, 10V | 30mOhm @ 20A, 10V | 3.5V @ 250µA | 33.3nC @ 10V | ±20V | 1871pF @ 50V | - | 2.1W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-4L | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
|
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|
Alpha & Omega Semiconductor |
MOSFET N CH 30V 18A 8SOIC |
7,236 |
|
- | - | - | - | - | 4.5V, 10V | - | - | - | ±20V | - | - | - | - | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
|
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|
Alpha & Omega Semiconductor |
MOSFET N-CH TO-263 |
8,190 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 440mOhm @ 5.5A, 10V | 5V @ 250µA | 42nC @ 10V | ±30V | 2000pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor |
MOSFET N-CH TO-263 |
5,130 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 250mOhm @ 10A, 10V | 5V @ 250µA | 74nC @ 10V | ±30V | 3440pF @ 100V | - | 463W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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|
Alpha & Omega Semiconductor |
MOSFET N-CH TO-252 |
2,790 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-252-2 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Alpha & Omega Semiconductor |
MOSFET N-CH TO-252 |
4,122 |
|
- | - | - | - | - | 4.5V, 10V | - | - | - | ±20V | - | - | - | - | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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|
Alpha & Omega Semiconductor |
MOSFET N-CH TO-252 |
8,496 |
|
- | - | - | - | - | 4.5V, 10V | - | - | - | ±20V | - | - | - | - | - | - | - |
|
|
|
Alpha & Omega Semiconductor |
MOSFET TO-251A |
7,812 |
|
SDMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 55A (Tc) | 4.5V, 10V | 7.3mOhm @ 20A, 10V | 2.5V @ 250µA | 26nC @ 10V | ±20V | 1450pF @ 12.5V | - | 3.2W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-251A | TO-251-3 Short Leads, IPak, TO-251AA |
|
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Alpha & Omega Semiconductor |
MOSFET DFN 5X6 |
2,502 |
|
- | - | - | - | - | 4.5V, 10V | - | - | - | ±20V | - | - | - | - | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
|
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Alpha & Omega Semiconductor |
MOSFET N-CH DFN 3X3 |
2,448 |
|
AlphaMOS | N-Channel | MOSFET (Metal Oxide) | 30V | 24A (Tc) | 4.5V, 10V | 8.8mOhm @ 20A, 10V | 2.5V @ 250µA | 22nC @ 10V | ±20V | 1086pF @ 15V | - | 3.1W (Ta), 23W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3x3) | 8-PowerVDFN |
|
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Alpha & Omega Semiconductor |
MOSFET N-CH TO251B |
6,606 |
|
AlphaMOS | N-Channel | MOSFET (Metal Oxide) | 30V | 46A (Tc) | 4.5V, 10V | 5mOhm @ 20A, 10V | 2.6V @ 250µA | 33nC @ 10V | ±20V | 1333pF @ 15V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-251B | TO-251-3 Short Leads, IPak, TO-251AA |
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Transphorm |
GANFET N-CH 600V 9A TO220 |
4,752 |
|
- | N-Channel | GaNFET (Gallium Nitride) | 600V | 9A (Tc) | 10V | 350mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3nC @ 4.5V | ±18V | 760pF @ 480V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Transphorm |
GANFET N-CH 600V 9A PQFN |
8,442 |
|
- | N-Channel | GaNFET (Gallium Nitride) | 600V | 9A (Tc) | 10V | 350mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3nC @ 4.5V | ±18V | 760pF @ 480V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 4-PQFN (8x8) | 4-PowerDFN |
|
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Transphorm |
GANFET N-CH 600V 17A PQFN |
7,308 |
|
- | N-Channel | GaNFET (Gallium Nitride) | 600V | 17A (Tc) | 10V | 180mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | ±18V | 760pF @ 480V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PQFN (8x8) | 4-PowerDFN |
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Transphorm |
GANFET N-CH 650V 20A PQFN |
4,428 |
|
- | N-Channel | GaNFET (Gallium Nitride) | 650V | 20A (Tc) | 10V | 130mOhm @ 13A, 8V | 2.6V @ 300µA | 14nC @ 8V | ±18V | 760pF @ 400V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 4-PQFN (8x8) | 4-PowerDFN |
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Transphorm |
GANFET N-CH 600V 9A TO220 |
2,754 |
|
- | N-Channel | GaNFET (Gallium Nitride) | 600V | 9A (Tc) | 10V | 350mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3nC @ 4.5V | ±18V | 760pF @ 480V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Transphorm |
GANFET N-CH 600V 9A PQFN |
7,254 |
|
- | N-Channel | GaNFET (Gallium Nitride) | 600V | 9A (Tc) | 10V | 350mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3nC @ 4.5V | ±18V | 760pF @ 480V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 3-PQFN (8x8) | 3-PowerDFN |
|
|
|
Infineon Technologies |
MOSFET N-CH TO-220AB |
7,542 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 160A (Tc) | 10V | 4.2mOhm @ 75A, 10V | 4V @ 150µA | 120nC @ 10V | ±20V | 4520pF @ 50V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | - | - |
|
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Infineon Technologies |
MOSFET N-CH 16SOIC |
5,760 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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|
Infineon Technologies |
MOSFET N-CH 16SOIC |
6,624 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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|
Infineon Technologies |
MOSFET N-CH WAFER |
8,982 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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|
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Infineon Technologies |
MOSFET N-CH WAFER |
8,712 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH WAFER |
4,572 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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|
|
Infineon Technologies |
MOSFET N-CH WAFER |
2,538 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |