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晶體管-FET,MOSFET-單

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類別半導體 / 晶體管 / 晶體管-FET,MOSFET-單
記錄 29,970
頁面 951/999
圖片
型號
制造商
描述
庫存
數量
系列
FET類型
技術
漏極至源極電壓(Vdss)
電流-25°C時的連續漏極(Id)
驅動電壓(Max Rds On,Min Rds On)
Rds On(Max)@ Id,Vgs
Vgs(th)(最大)@ ID
門電荷(Qg)(最大值)@ Vgs
Vgs(最大)
輸入電容(Ciss)(最大值)@ Vds
FET功能
功耗(最大值)
工作溫度
安裝類型
供應商設備包裝
包裝/箱
BBL4001
ON Semiconductor
MOSFET N-CH 60V 74A TO220
4,644
-
N-Channel
MOSFET (Metal Oxide)
60V
74A (Ta)
4V, 10V
6.1mOhm @ 37A, 10V
2.6V @ 1mA
135nC @ 10V
±20V
6900pF @ 20V
-
2W (Ta), 35W (Tc)
150°C (TJ)
Through Hole
TO-220-3 Fullpack/TO-220F-3SG
TO-220-3 Full Pack
BFL4001-1EX
ON Semiconductor
MOSFET N-CH 900V 6.5A TO220
8,424
-
N-Channel
MOSFET (Metal Oxide)
900V
6.5A (Ta)
10V
2.7Ohm @ 3.25A, 10V
-
44nC @ 10V
±30V
850pF @ 30V
-
2W (Ta), 37W (Tc)
150°C (TA)
Through Hole
TO-220-3 Fullpack/TO-220F-3SG
TO-220-3 Full Pack
AO5401EL
Alpha & Omega Semiconductor
MOSFET P-CH 20V 0.5A SC89-3L
6,084
-
P-Channel
MOSFET (Metal Oxide)
20V
500mA (Ta)
1.8V, 4.5V
800mOhm @ 500mA, 4.5V
0.9V @ 250µA
-
±8V
100pF @ 10V
-
280mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SC-89-3
SC-89, SOT-490
SIR808DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 25V 20A POWERPAK
5,706
TrenchFET®
N-Channel
MOSFET (Metal Oxide)
25V
20A (Tc)
4.5V, 10V
8.9mOhm @ 17A, 10V
2.5V @ 250µA
22.8nC @ 10V
±20V
815pF @ 12.5V
-
29.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SUD45P04-16P-GE3
Vishay Siliconix
MOSFET P-CH 40V 36A TO252
6,174
TrenchFET®
P-Channel
MOSFET (Metal Oxide)
40V
36A (Tc)
4.5V, 10V
16.2mOhm @ 14A, 20V
2.5V @ 250µA
100nC @ 10V
±20V
2765pF @ 20V
-
2.1W (Ta), 41.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPak (2 Leads + Tab), SC-63
SUD50N02-09P-GE3
Vishay Siliconix
MOSFET N-CH 20V 20A TO252
3,294
TrenchFET®
N-Channel
MOSFET (Metal Oxide)
20V
20A (Ta)
4.5V, 10V
14mOhm @ 20A, 10V
3V @ 250µA
16nC @ 10V
±20V
1300pF @ 10V
-
39.5W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-252
TO-252-3, DPak (2 Leads + Tab), SC-63
SUD50N03-12P-GE3
Vishay Siliconix
MOSFET N-CH 30V 16.8A TO252
5,310
TrenchFET®
N-Channel
MOSFET (Metal Oxide)
30V
16.8A (Ta)
4.5V, 10V
17mOhm @ 20A, 10V
3V @ 250µA
42nC @ 10V
±20V
1600pF @ 25V
-
39W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPak (2 Leads + Tab), SC-63
SUM120N04-1M7L-GE3
Vishay Siliconix
MOSFET N-CH 40V 120A D2PAK
8,352
TrenchFET®
N-Channel
MOSFET (Metal Oxide)
40V
120A (Tc)
4.5V, 10V
17mOhm @ 30A, 10V
2.5V @ 250µA
285nC @ 10V
±20V
11685pF @ 20V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2Pak)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SUM25P10-138-E3
Vishay Siliconix
MOSFET P-CH 100V 16.7A D2PAK
7,542
TrenchFET®
N-Channel
MOSFET (Metal Oxide)
100V
16.7A (Tc)
6V, 10V
13.8mOhm @ 6A, 10V
4V @ 250µA
60nC @ 10V
±20V
2110pF @ 25V
-
3.75W (Ta), 88.2W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2Pak)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SUM50P10-42-E3
Vishay Siliconix
MOSFET P-CH 100V 36A D2PAK
6,426
TrenchFET®
N-Channel
MOSFET (Metal Oxide)
100V
36A (Tc)
4.5V, 10V
4.2mOhm @ 14A, 10V
3V @ 250µA
160nC @ 10V
±20V
4600pF @ 50V
-
18.8W (Ta), 125W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2Pak)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SUP25P10-138-GE3
Vishay Siliconix
MOSFET P-CH 100V 16.3A TO220AB
3,744
TrenchFET®
N-Channel
MOSFET (Metal Oxide)
100V
16.3A (Tc)
6V, 10V
13.8mOhm @ 6A, 10V
4V @ 250µA
60nC @ 10V
±20V
2100pF @ 50V
-
3.1W (Ta), 73.5W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
DMT69M8LPS-13
Diodes Incorporated
MOSFET N-CHA 60V 10.2A POWERDI
3,942
Automotive, AEC-Q101
N-Channel
MOSFET (Metal Oxide)
60V
10.2A (Ta), 70A (Tc)
4.5V, 10V
12mOhm @ 13.5A, 10V
2V @ 250µA
33.5nC @ 10V
±16V
1925pF @ 30V
-
2.3W (Ta), 113W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI5060-8
8-PowerTDFN
SPD04N60S5BTMA1
Infineon Technologies
MOSFET N-CH 600V 4.5A TO252
6,012
CoolMOS™
N-Channel
MOSFET (Metal Oxide)
600V
4.5A (Tc)
10V
950mOhm @ 2.8A, 10V
5.5V @ 200µA
22.9nC @ 10V
±20V
580pF @ 25V
-
50W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
IPB160N04S2L03ATMA2
Infineon Technologies
MOSFET N-CH TO262-7
8,658
Automotive, AEC-Q101, OptiMOS™
N-Channel
MOSFET (Metal Oxide)
40V
160A (Tc)
4.5V, 10V
2.7mOhm @ 80A, 10V
2V @ 250µA
230nC @ 5V
±20V
6000pF @ 15V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7-3
TO-263-7, D²Pak (6 Leads + Tab)
IPP90N06S4L04AKSA2
Infineon Technologies
MOSFET N-CH TO220-3
3,726
Automotive, AEC-Q101, OptiMOS™
N-Channel
MOSFET (Metal Oxide)
60V
90A (Tc)
4.5V, 10V
3.7mOhm @ 90A, 10V
2.2V @ 90µA
170nC @ 10V
±16V
13000pF @ 25V
-
150W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
IPI120N06S403AKSA2
Infineon Technologies
MOSFET N-CH TO262-3
3,834
Automotive, AEC-Q101, OptiMOS™
N-Channel
MOSFET (Metal Oxide)
60V
120A (Tc)
10V
3.2mOhm @ 100A, 10V
4V @ 120µA
160nC @ 10V
±20V
13150pF @ 25V
-
167W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO262-3-1
TO-262-3 Long Leads, I²Pak, TO-262AA
IPI120N06S4H1AKSA2
Infineon Technologies
MOSFET N-CH TO262-3
5,886
Automotive, AEC-Q101, OptiMOS™
N-Channel
MOSFET (Metal Oxide)
60V
120A (Tc)
10V
2.4mOhm @ 100A, 10V
4V @ 200µA
270nC @ 10V
±20V
21900pF @ 25V
-
250W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO262-3-1
TO-262-3 Long Leads, I²Pak, TO-262AA
IPI80N06S4L05AKSA2
Infineon Technologies
MOSFET N-CH TO262-3
2,484
Automotive, AEC-Q101, OptiMOS™
N-Channel
MOSFET (Metal Oxide)
60V
80A (Tc)
4.5V, 10V
8.5mOhm @ 40A, 4.5V
2.2V @ 60µA
110nC @ 10V
±16V
8180pF @ 25V
-
107W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO262-3-1
TO-262-3 Long Leads, I²Pak, TO-262AA
IPP70P04P409AKSA1
Infineon Technologies
MOSFET P-CH TO220-3
8,784
Automotive, AEC-Q101, OptiMOS™
P-Channel
MOSFET (Metal Oxide)
40V
72A (Tc)
10V
9.4mOhm @ 70A, 10V
4V @ 120µA
70nC @ 10V
±20V
4810pF @ 25V
-
75W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
IPP80N06S4L05AKSA2
Infineon Technologies
MOSFET N-CH TO220-3
4,482
Automotive, AEC-Q101, OptiMOS™
N-Channel
MOSFET (Metal Oxide)
60V
80A (Tc)
4.5V, 10V
8.5mOhm @ 40A, 4.5V
2.2V @ 60µA
110nC @ 10V
±16V
8180pF @ 25V
-
107W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
IPP80P04P405AKSA1
Infineon Technologies
MOSFET P-CH TO220-3
8,334
Automotive, AEC-Q101, OptiMOS™
P-Channel
MOSFET (Metal Oxide)
40V
80A (Tc)
10V
5.2mOhm @ 80A, 10V
4V @ 250µA
151nC @ 10V
±20V
10300pF @ 25V
-
125W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
64-9149PBF
Infineon Technologies
MOSFET N-CH 60V DIRECTFETL8
5,598
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
64-9150PBF
Infineon Technologies
MOSFET N-CH 40V DIRECTFETL8
2,448
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
94-2355PBF
Infineon Technologies
MOSFET N-CH 100V TO-220AB
4,554
-
-
-
-
-
4V, 10V
-
-
-
±16V
-
-
-
-
-
-
-
94-2503PBF
Infineon Technologies
MOSFET N-CH 100V 57A D2PAK
5,418
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
94-4849PBF
Infineon Technologies
MOSFET P-CH 55V 11A DPAK
8,478
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRFC3306EB
Infineon Technologies
MOSFET N-CH 60V DIE ON WAFER
8,694
*
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRFC4010EB
Infineon Technologies
MOSFET N-CH 100V DIE ON WAFER
3,672
*
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRFC4115EB
Infineon Technologies
MOSFET N-CH 150V DIE ON WAFER
5,274
*
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRFC4310EF
Infineon Technologies
MOSFET N-CH 100V DIE ON FILM
5,166
*
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-