晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 952/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 100V DIE ON WAFER |
3,580 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
ON Semiconductor |
MOSFET N-CH 100V 20A 5DFN |
7,884 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | - | 4.5V, 10V | 4mOhm @ 20A, 10V | 3V @ 250µA | 9.4nC @ 10V | ±16V | 5320pF @ 25V | - | 3.9W (Ta), 198W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
|
|
|
ON Semiconductor |
MOSFET N-CH 100V 20A 5DFN |
5,832 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | - | 4.5V, 10V | 4mOhm @ 20A, 10V | 3V @ 250µA | 9.4nC @ 10V | ±16V | 5320pF @ 25V | - | 3.9W (Ta), 198W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
|
|
|
ON Semiconductor |
MOSFET N-CH 100V 20A 5DFN |
4,896 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | - | 4.5V, 10V | 4mOhm @ 20A, 10V | 3V @ 250µA | 9.4nC @ 10V | ±16V | 5320pF @ 25V | - | 3.9W (Ta), 198W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
|
|
|
ON Semiconductor |
MOSFET N-CH 100V 20A 5DFN |
7,632 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | - | 4.5V, 10V | 4mOhm @ 20A, 10V | 3V @ 250µA | 9.4nC @ 10V | ±16V | 5320pF @ 25V | - | 3.9W (Ta), 198W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
|
|
|
ON Semiconductor |
MOSFET N-CH 100V 17A 5DFN |
4,896 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | - | 4.5V, 10V | 5.6mOhm @ 20A, 10V | 3V @ 250µA | 6.8nC @ 10V | ±16V | 3980pF @ 25V | - | 3.8W (Ta), 165W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
|
|
|
ON Semiconductor |
MOSFET N-CH 100V 17A 5DFN |
3,996 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | - | 4.5V, 10V | 5.6mOhm @ 20A, 10V | 3V @ 250µA | 6.8nC @ 10V | ±16V | 3980pF @ 25V | - | 3.8W (Ta), 165W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
|
|
|
ON Semiconductor |
MOSFET N-CH 100V 17A 5DFN |
3,816 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | - | 4.5V, 10V | 5.6mOhm @ 20A, 10V | 3V @ 250µA | 6.8nC @ 10V | ±16V | 3980pF @ 25V | - | 3.8W (Ta), 165W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
|
|
|
ON Semiconductor |
MOSFET N-CH 100V 17A 5DFN |
5,328 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | - | 4.5V, 10V | 5.6mOhm @ 20A, 10V | 3V @ 250µA | 6.8nC @ 10V | ±16V | 3980pF @ 25V | - | 3.8W (Ta), 165W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
|
|
|
ON Semiconductor |
MOSFET N-CH 100V 11A 5DFN |
2,538 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | 11A (Ta), 55A (Tc) | 4.5V, 10V | 13mOhm @ 20A, 10V | 3V @ 250µA | 8nC @ 4.5V | ±16V | 1680pF @ 25V | - | 3.8W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
|
|
|
ON Semiconductor |
MOSFET N-CH 100V 11A 5DFN |
4,932 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | 11A (Ta), 55A (Tc) | 4.5V, 10V | 13mOhm @ 20A, 10V | 3V @ 250µA | 8nC @ 4.5V | ±16V | 1680pF @ 25V | - | 3.8W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
|
|
|
Infineon Technologies |
MOSFET NCH 100V 58A PQFN |
7,524 |
|
Automotive, AEC-Q101, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 58A (Tc) | 10V | 14.5mOhm @ 35A, 10V | 4V @ 100µA | 74nC @ 10V | ±20V | 3050pF @ 25V | - | 4.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
|
|
|
Infineon Technologies |
MOSFET NCH 100V 23A PQFN |
4,266 |
|
FASTIRFET™, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 23A (Ta), 157A (Tc) | 10V | 3.9mOhm @ 50A, 10V | 3.6V @ 250µA | 74nC @ 10V | ±20V | 3120pF @ 50V | - | 4W (Ta), 195W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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|
|
Infineon Technologies |
MOSFET NCH 100V 128A TO247AC |
5,976 |
|
Automotive, AEC-Q101, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 128A (Tc) | 10V | 6mOhm @ 77A, 10V | 4V @ 150µA | 188nC @ 10V | ±20V | 7120pF @ 50V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
|
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|
ON Semiconductor |
MOSFET NCH 60V 60A POWER56 |
3,222 |
|
Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 60A (Tc) | 4.5V, 10V | 8.5mOhm @ 60A, 10V | 3V @ 250µA | 72nC @ 10V | ±20V | 3695pF @ 30V | - | 150W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
|
|
|
Microsemi |
POWER MOSFET - SIC |
7,434 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 25A (Tc) | 20V | 175mOhm @ 10A, 20V | 2.5V @ 1mA | 72nC @ 20V | +25V, -10V | - | - | 175W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
|
|
Microsemi |
POWER MOSFET - SIC |
6,750 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 25A (Tc) | - | 175mOhm @ 10A, 20V | 2.5V @ 1mA | 72nC @ 20V | - | - | - | 175W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | D3 | D-3 Module |
|
|
|
Microsemi |
POWER MOSFET - SIC |
7,668 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 700V | 65A (Tc) | 20V | 70mOhm @ 32.5A, 20V | 2.5V @ 1mA | 125nC @ 20V | +25V, -10V | - | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
|
|
|
Microsemi |
POWER MOSFET - SIC |
5,076 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 700V | 49A (Tc) | 20V | 70mOhm @ 32.5A, 20V | 2.5V @ 1mA | 125nC @ 20V | +25V, -10V | - | - | 165W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
|
|
|
Microsemi |
POWER MOSFET - SIC |
3,852 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 700V | 65A (Tc) | 20V | 70mOhm @ 32.5A, 20V | 2.5V @ 1mA | 125nC @ 20V | +25V, -10V | - | - | 220W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D3Pak | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Microsemi |
POWER MOSFET - SIC |
8,316 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 80A (Tc) | 20V | 55mOhm @ 40A, 20V | 2.5V @ 1mA | 235nC @ 20V | +25V, -10V | - | - | 555W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
|
|
Microsemi |
POWER MOSFET - SIC |
6,552 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 51A (Tc) | 20V | 55mOhm @ 40A, 20V | 2.5V @ 1mA | 235nC @ 20V | +25V, -10V | - | - | 273W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
|
|
|
Microsemi |
POWER MOSFET - SIC |
5,688 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 80A (Tc) | 20V | 55mOhm @ 40A, 20V | 2.5V @ 1mA | 235nC @ 20V | +25V, -10V | - | - | 625W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D3Pak | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Microsemi |
MOSFET P-CHANNEL 100V 25A TO3 |
6,282 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 25A (Tc) | 10V | 200mOhm @ 15.8A, 10V | 4V @ 250µA | - | ±20V | 3000pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3 | TO-204AA, TO-3 |
|
|
|
Microsemi |
MOSFET P-CHANNEL 100V 25A TO3 |
3,798 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 25A (Tc) | 10V | 200mOhm @ 15.8A, 10V | 4V @ 250µA | - | ±20V | 3000pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3 | TO-204AA, TO-3 |
|
|
|
Microsemi |
MOSFET P-CHANNEL 100V 25A TO3 |
3,996 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 25A (Tc) | 10V | 200mOhm @ 15.8A, 10V | 4V @ 250µA | - | ±20V | 3000pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3 | TO-204AA, TO-3 |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 20V 10A/12A 8-SOIC |
4,482 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 10A (Ta), 12A (Tc) | 10V | 13.4mOhm @ 10A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | - | 900pF @ 10V | - | 2W | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 19A 8-SOIC |
2,466 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 19A (Ta) | 10V | 4.5mOhm @ 19A, 10V | 2.25V @ 250µA | 44nC @ 4.5V | ±20V | 3710pF @ 15V | - | 2.5W | -55°C ~ 150°C (TA) | Surface Mount | - | - |
|
|
|
Infineon Technologies |
MOSFET NCH 600V 10.6A TO252 |
2,304 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 3.5V @ 300µA | 32nC @ 10V | ±20V | 700pF @ 100V | Super Junction | 83W (Tc) | -55°C ~ 155°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET NCH 600V 3.2A TO251 |
5,004 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 3.2A (Tc) | 10V | 1.4Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4nC @ 10V | ±20V | 200pF @ 100V | Super Junction | 28.4W (Tc) | -55°C ~ 155°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |