Toshiba Semiconductor and Storage 整流器-單

系列

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二極管類型

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電壓-直流反向（Vr）（最大值）

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電流-平均整流（Io）

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電壓-正向（Vf）（最大值）@如果

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速度

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反向恢復時間（trr）

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當前-反向泄漏@ Vr

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電容@ Vr，F

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安裝類型

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包裝/箱

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供應商設備包裝

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工作溫度-結點

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類別半導體 / 二極管與整流器 / 整流器-單

制造商Toshiba Semiconductor and Storage

記錄 225

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型號	制造商	描述	庫存	系列	二極管類型	電壓-直流反向（Vr）（最大值）	電流-平均整流（Io）	電壓-正向（Vf）（最大值）@如果	速度	反向恢復時間（trr）	當前-反向泄漏@ Vr	電容@ Vr，F	安裝類型	包裝/箱	供應商設備包裝	工作溫度-結點
CTS05F40,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 500MA CST2	6,084	-	Schottky	40V	500mA	810mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	15µA @ 40V	28pF @ 0V, 1MHz	Surface Mount	SOD-882	CST2	150°C (Max)
DSR01S30SC,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 100MA SC2	5,130	-	Schottky	30V	100mA	620mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	700µA @ 30V	8.2pF @ 0V, 1MHz	Surface Mount	2-SMD, No Lead	SC2	125°C (Max)
CUS05F40,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 500MA USC	8,928	-	Schottky	40V	500mA	810mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	15µA @ 40V	28pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	USC	150°C (Max)
1SS294,LF	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 100MA SMINI	2,430	-	Schottky	40V	100mA	600mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 40V	25pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini	125°C (Max)
CUS10F40,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1A USC	2,988	-	Schottky	40V	1A	670mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	20µA @ 40V	74pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	USC	150°C (Max)
CBS10F40,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1A CST2B	6,282	-	Schottky	40V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	20µA @ 40V	74pF @ 0V, 1MHz	Surface Mount	SOD-882	CST2B	150°C (Max)
CBS10S30,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 20V 1A CST2B	5,580	-	Schottky	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	135pF @ 0V, 1MHz	Surface Mount	2-SMD, No Lead	CST2B	125°C (Max)
CBS10S40,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1A CST2B	4,806	-	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 40V	120pF @ 0V, 1MHz	Surface Mount	2-SMD, No Lead	CST2B	125°C (Max)
CRG03(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 1A SFLAT	5,400	-	Standard	400V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	-	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 150°C
CRG01(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE GEN PURP 100V 700MA SFLAT	7,992	-	Standard	100V	700mA	1.1V @ 700mA	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 150°C
CRG07(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 700MA S-FLAT	3,672	-	Standard	400V	700mA	1.1V @ 700mA	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	-	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	175°C (Max)
CRG09(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 1A S-FLAT	7,848	-	Standard	400V	1A	1.1V @ 700mA	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	-	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 150°C
CRG02(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 700MA SFLAT	7,488	-	Standard	400V	700mA	1.1V @ 700mA	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	-	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 150°C
CRG04(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE GEN PURP 600V 1A SFLAT	6,930	-	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	-	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 150°C
CRF03(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE GEN PURP 600V 700MA SFLAT	4,374	-	Standard	600V	700mA	2V @ 700mA	Fast Recovery =< 500ns, > 200mA (Io)	100ns	50µA @ 600V	-	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 150°C
CRG05(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE GEN PURP 800V 1A S-FLAT	6,300	-	Standard	800V	1A	1.2V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 800V	-	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 150°C
CMG05(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 1A M-FLAT	2,772	-	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	-	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 150°C
CRH02(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 500MA S-FLAT	6,012	-	Standard	200V	500mA	950mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	150°C (Max)
CUS10I30A(TE85L,QM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1A US-FLAT	7,020	-	Schottky	30V	1A	390mV @ 700mA	Fast Recovery =< 500ns, > 200mA (Io)	-	60µA @ 30V	50pF @ 10V, 1MHz	Surface Mount	SC-76, SOD-323	US-FLAT (1.25x2.5)	150°C (Max)
CUS06(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 20V 1A US-FLAT	2,502	-	Schottky	20V	1A	450mV @ 700mA	Fast Recovery =< 500ns, > 200mA (Io)	-	30µA @ 20V	40pF @ 10V, 1MHz	Surface Mount	SC-76, SOD-323	US-FLAT (1.25x2.5)	-40°C ~ 150°C
CMG06(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE GEN PURP 600V 1A M-FLAT	4,608	-	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	-	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 150°C
CUS05(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 20V 1A US-FLAT	3,186	-	Schottky	20V	1A	370mV @ 700mA	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 20V	40pF @ 10V, 1MHz	Surface Mount	SC-76, SOD-323	US-FLAT (1.25x2.5)	-40°C ~ 125°C
CUS03(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 700MA US-FLAT	2,448	-	Schottky	40V	700mA	520mV @ 700mA	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 40V	45pF @ 10V, 1MHz	Surface Mount	SC-76, SOD-323	US-FLAT (1.25x2.5)	-40°C ~ 150°C
CUS04(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 60V 700MA US-FLAT	4,248	-	Schottky	60V	700mA	580mV @ 700mA	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	38pF @ 10V, 1MHz	Surface Mount	SC-76, SOD-323	US-FLAT (1.25x2.5)	-40°C ~ 150°C
CMG07(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 1A M-FLAT	8,424	-	Standard	400V	1A	-	Fast Recovery =< 500ns, > 200mA (Io)	100ns	-	-	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-
CMH04(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 1A MFLAT	5,184	-	Standard	200V	1A	980mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 150°C
CRS10I30C(TE85L,QM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1A S-FLAT	4,032	-	Schottky	30V	1A	360mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 30V	82pF @ 10V, 1MHz	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	150°C (Max)
CRS15I30A(TE85L,QM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1.5A S-FLAT	8,640	-	Schottky	30V	1.5A	460mV @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	60µA @ 30V	50pF @ 10V, 1MHz	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	150°C (Max)
CRS15I30B(TE85L,QM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1.5A S-FLAT	6,354	-	Schottky	30V	1.5A	400mV @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 30V	82pF @ 10V, 1MHz	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	150°C (Max)
CRS15I40A(TE85L,QM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1.5A S-FLAT	4,356	-	Schottky	40V	1.5A	550mV @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	60µA @ 40V	35pF @ 10V, 1MHz	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	150°C (Max)

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