Toshiba Semiconductor and Storage 整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
制造商Toshiba Semiconductor and Storage
記錄 225
頁面 7/8
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1A SFLAT |
6,408 |
|
- | Schottky | 30V | 1A | 360mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5mA @ 30V | - | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 125°C |
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|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1A USFLAT |
4,518 |
|
- | Schottky | 30V | 1A | 390mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5mA @ 30V | - | Surface Mount | SC-76, SOD-323 | US-FLAT (1.25x2.5) | -40°C ~ 125°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1A USFLAT |
2,736 |
|
- | Schottky | 30V | 1A | 470mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 30V | - | Surface Mount | SC-76, SOD-323 | US-FLAT (1.25x2.5) | -40°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 1A PWMINI |
4,842 |
|
- | Schottky | 40V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | TO-243AA | PW-MINI | -40°C ~ 125°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 700MA USC |
4,464 |
|
- | Schottky | 30V | 700mA | 450mV @ 700mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 30V | 170pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | USC | 125°C (Max) |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 500MA USC |
2,808 |
|
- | Schottky | 30V | 500mA | 450mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | - | - | Surface Mount | SC-76, SOD-323 | USC | 125°C (Max) |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 1A MFLAT |
41,662 |
|
- | Standard | 400V | 1A | 1.8V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
|
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|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 100MA ESC |
4,176 |
|
- | Schottky | 40V | 100mA | 600mV @ 50mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 10V | 25pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | ESC | 125°C (Max) |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 100MA SC2 |
6,588 |
|
- | Schottky | 30V | 100mA | 500mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 50µA @ 30V | 9.3pF @ 0V, 1MHz | Surface Mount | 2-SMD, No Lead | SC2 | 125°C (Max) |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 100MA SC2 |
3,454 |
|
- | Schottky | 30V | 100mA | 620mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 700µA @ 30V | 8.2pF @ 0V, 1MHz | Surface Mount | 2-SMD, No Lead | SC2 | 125°C (Max) |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 500MA CST2B |
2,556 |
|
- | Schottky | 30V | 500mA | 450mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 30V | 118pF @ 0V, 1MHz | Surface Mount | 2-SMD, No Lead | CST2B | 125°C (Max) |
|
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|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 20V 1.5A CST2C |
2,538 |
|
- | Schottky | 20V | 1.5A | 400mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | 200pF @ 0V, 1MHz | Surface Mount | 0603 (1608 Metric) | CST2C | 125°C (Max) |
|
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|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 80V 100MA SMINI |
2,736 |
|
- | Standard | 80V | 100mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 500nA @ 80V | 3pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 125°C (Max) |
|
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|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 200V 3A L-FLAT |
8,532 |
|
- | Standard | 200V | 3A (DC) | 0.98V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 200V 3A L-FLAT |
7,668 |
|
- | Standard | 200V | 3A (DC) | 0.98V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 300V 3A L-FLAT |
6,840 |
|
- | Standard | 300V | 3A (DC) | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 300V | - | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 300V 3A L-FLAT |
4,986 |
|
- | Standard | 300V | 3A (DC) | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 300V | - | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 3A L-FLAT |
2,070 |
|
- | Standard | 400V | 3A (DC) | - | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | - | - | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | - |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 3A L-FLAT |
4,194 |
|
- | Standard | 400V | 3A (DC) | - | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | - | - | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | - |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 200V 5A L-FLAT |
2,772 |
|
- | Standard | 200V | 5A (DC) | 0.98V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 200V 5A L-FLAT |
6,372 |
|
- | Standard | 200V | 5A (DC) | 0.98V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 200V 5A L-FLAT |
4,752 |
|
- | Standard | 200V | 5A (DC) | 0.98V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 300V 5A L-FLAT |
6,354 |
|
- | Standard | 300V | 5A (DC) | - | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | - | - | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | - |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 300V 5A L-FLAT |
6,210 |
|
- | Standard | 300V | 5A (DC) | - | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | - | - | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | - |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 5A L-FLAT |
7,020 |
|
- | Standard | 400V | 5A (DC) | 1.8V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | - | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 5A L-FLAT |
4,770 |
|
- | Standard | 400V | 5A (DC) | 1.8V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | - | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 10A L-FLAT |
3,454 |
|
- | Schottky | 30V | 10A (DC) | 0.47V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 30V | 530pF @ 10V, 1MHz | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 125°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 10A L-FLAT |
3,366 |
|
- | Schottky | 30V | 10A (DC) | 0.47V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 30V | 530pF @ 10V, 1MHz | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 125°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 10A L-FLAT |
5,580 |
|
- | Schottky | 30V | 10A (DC) | 0.47V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 30V | 530pF @ 10V, 1MHz | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 125°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 10A L-FLAT |
7,236 |
|
- | Schottky | 30V | 10A (DC) | 0.47V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 30V | 530pF @ 10V, 1MHz | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 125°C |