Toshiba Semiconductor and Storage 晶體管-FET，MOSFET-單
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
展開過濾器
重置過濾器
應用過濾器
類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
制造商Toshiba Semiconductor and Storage
記錄 786
頁面 4/27
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 9.6A 8TSON |
29,418 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 80V | 9.6A (Tc) | 10V | 30mOhm @ 4.8A, 10V | 4V @ 100µA | 11nC @ 10V | ±20V | 920pF @ 40V | - | 700mW (Ta), 27W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 63A 8TSON |
219,186 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 4.3mOhm @ 20A, 10V | 2.3V @ 200µA | 14.8nC @ 10V | ±20V | 1400pF @ 15V | - | 700mW (Ta), 34W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 63A 8SOP |
33,012 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 4mOhm @ 20A, 10V | 2.3V @ 200µA | 14.8nC @ 10V | ±20V | 1400pF @ 15V | - | 1.6W (Ta), 36W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 47A 8-SOP |
52,056 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 47A (Tc) | 4.5V, 10V | 3.2mOhm @ 23.5A, 10V | 2.3V @ 300µA | 21nC @ 10V | ±20V | 2100pF @ 15V | - | 1.6W (Ta), 44W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
|
|
|
Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
103,212 |
|
U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 60V | 60A (Tc) | 4.5V, 10V | 13.5mOhm @ 10A, 4.5V | 2.5V @ 200µA | 22nC @ 10V | ±20V | 1875pF @ 30V | - | 81W (Tc) | 175°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CHANNEL 650V 7A DPAK |
23,004 |
|
DTMOSV | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 560mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5nC @ 10V | ±30V | 380pF @ 300V | - | 60W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 7A DPAK |
22,512 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 7A (Ta) | 10V | 48mOhm @ 3.5A, 10V | 4V @ 100µA | 7.1nC @ 10V | ±20V | 470pF @ 10V | - | 50W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 8A DPAK |
30,606 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 8A (Ta) | 10V | 560mOhm @ 4A, 10V | 4.5V @ 400µA | 22nC @ 10V | ±30V | 590pF @ 300V | - | 80W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N CH 60V 28A 8-SOP ADV |
43,596 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 28A (Ta) | 10V | 5.9mOhm @ 14A, 10V | 4V @ 300µA | 38nC @ 10V | ±20V | 3100pF @ 30V | - | 1.6W (Ta), 57W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N -CH 600V 30.8A DFN |
24,174 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 109mOhm @ 15.4A, 10V | 4.5V @ 1.5mA | 105nC @ 10V | ±30V | 3000pF @ 300V | - | 240W (Tc) | 150°C (TA) | Surface Mount | 4-DFN-EP (8x8) | 4-VSFN Exposed Pad |
|
|
|
Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
17,622 |
|
U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 4.5V, 10V | 7.2mOhm @ 15A, 4.5V | 2.5V @ 500µA | 48.2nC @ 10V | ±20V | 3280pF @ 30V | - | 87W (Tc) | 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N CH 100V 148A TO220 |
30,546 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 148A (Ta) | 10V | 4.8mOhm @ 32.5A, 10V | 4V @ 1mA | 81nC @ 10V | ±20V | 5400pF @ 50V | - | 192W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 800V 9.5A TO220SIS |
6,732 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 800V | 9.5A (Ta) | 10V | 550mOhm @ 4.8A, 10V | 4V @ 450µA | 19nC @ 10V | ±20V | 1150pF @ 300V | - | 40W (Tc) | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 800V 11.5A TO220SIS |
7,470 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 800V | 11.5A (Ta) | 10V | 450mOhm @ 5.8A, 10V | 4V @ 570µA | 23nC @ 10V | ±20V | 1400pF @ 300V | - | 45W (Tc) | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 800V 11.5A TO220 |
9,324 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 800V | 11.5A (Ta) | 10V | 450mOhm @ 5.8A, 10V | 4V @ 570µA | 23nC @ 10V | ±20V | 1400pF @ 300V | - | 165W (Tc) | 150°C | Through Hole | TO-220 | TO-220-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 100A TO220 |
15,900 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Ta) | 10V | 3.4mOhm @ 50A, 10V | 4V @ 1mA | 140nC @ 10V | ±20V | 8800pF @ 50V | - | 255W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 800V 17A TO220SIS |
15,156 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 800V | 17A (Ta) | 10V | 290mOhm @ 8.5A, 10V | 4V @ 850µA | 32nC @ 10V | ±20V | 2050pF @ 300V | - | 45W (Tc) | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 100A TO-220 |
7,680 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 10V | 3.8mOhm @ 50A, 10V | 4V @ 1mA | 140nC @ 10V | ±20V | 8800pF @ 50V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 25A TO-220SIS |
8,550 |
|
DTMOSIV-H | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Ta) | 10V | 140mOhm @ 7.5A, 10V | 4.5V @ 1.2mA | 60nC @ 10V | ±30V | 2400pF @ 300V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 30.8A TO-247 |
22,656 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 99mOhm @ 15.4A, 10V | 4.5V @ 1.5mA | 105nC @ 10V | ±30V | 3000pF @ 300V | - | 230W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 61.8A TO-247 |
17,748 |
|
DTMOSIV-H | N-Channel | MOSFET (Metal Oxide) | 600V | 61.8A (Ta) | 10V | 40mOhm @ 21A, 10V | 3.5V @ 3.1mA | 135nC @ 10V | ±30V | 6500pF @ 300V | Super Junction | 400W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 38.8A TO-3P(N) |
7,392 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 38.8A (Ta) | 10V | 65mOhm @ 19.4A, 10V | 3.7V @ 1.9mA | 135nC @ 10V | ±30V | 4100pF @ 300V | Super Junction | 270W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 61.8A TO-3P(N) |
6,732 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 61.8A (Ta) | 10V | 38mOhm @ 30.9A, 10V | 3.7V @ 3.1mA | 180nC @ 10V | ±30V | 6500pF @ 300V | Super Junction | 400W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET P CH 20V 6A 2-2AA1A |
25,284 |
|
U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 6A (Ta) | 1.5V, 4.5V | 23.1mOhm @ 4A, 4.5V | 1V @ 1mA | 24.8nC @ 4.5V | ±8V | 1800pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N CH 30V 32A 8SOP |
23,784 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 32A (Ta) | 4.5V, 10V | 11mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5nC @ 10V | ±20V | 660pF @ 15V | - | 1.6W (Ta), 21W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 50A DP TO252-3 |
29,028 |
|
U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Ta) | 4.5V, 10V | 8.7mOhm @ 25A, 10V | 2.3V @ 500µA | 38nC @ 10V | ±20V | 2600pF @ 10V | - | 60W (Tc) | 150°C (TJ) | Surface Mount | DP | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
22,296 |
|
U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 30V | 88A (Tc) | 4.5V, 10V | 4.2mOhm @ 44A, 4.5V | 2.1V @ 300µA | 50nC @ 10V | ±20V | 3825pF @ 15V | - | 90W (Tc) | 175°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CHANNEL 650V 9.7A DPAK |
23,442 |
|
DTMOSV | N-Channel | MOSFET (Metal Oxide) | 650V | 9.7A (Tc) | 10V | 380mOhm @ 4.9A, 10V | 4V @ 360µA | 20nC @ 10V | ±30V | 590pF @ 300V | - | 80W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N CH 60V 22A 8-SOP ADV |
48,144 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 22A (Ta) | 10V | 7.5mOhm @ 11A, 10V | 4V @ 300µA | 31nC @ 10V | ±20V | 2320pF @ 30V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 65A DPAK |
17,010 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 40V | 65A (Ta) | 10V | 4.3mOhm @ 32.5A, 10V | 2.5V @ 300µA | 39nC @ 10V | ±20V | 2550pF @ 10V | - | 107W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |