EPC 晶體管-FET，MOSFET-陣列
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
展開過濾器
重置過濾器
應用過濾器
類別半導體 / 晶體管 / 晶體管-FET，MOSFET-陣列
制造商EPC
記錄 27
頁面 1/1
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | FET功能 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | 輸入電容（Ciss）（最大值）@ Vds | 功率-最大 | 工作溫度 | 安裝類型 | 包裝/箱 | 供應商設備包裝 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
EPC |
GANFET TRANS SYM 100V BUMPED DIE |
78,744 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 1.7A | 70mOhm @ 2A, 5V | 2.5V @ 600µA | 0.73nC @ 5V | 75pF @ 50V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS SYMMETRICAL HALF BRIDG |
78,798 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS ASYMMETRICAL HALF BRID |
3,137 |
|
- | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 30V | 16A (Ta) | 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V | 2.5V @ 5mA | 2.2nC @ 5V, 5.7nC @ 5V | 230pF @ 15V, 590pF @ 15V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS SYMMETRICAL HALF BRIDG |
87,732 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 23A | 4.4mOhm @ 20A, 5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS SYMMETRICAL HALF BRIDG |
78,552 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 28A | 5.5mOhm @ 20A, 5V | 2.5V @ 7mA | 6.5nC @ 5V | 760pF @ 40V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET TRANS SYM HALF BRDG 80V |
45,828 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 23A | 5.5mOhm @ 20A, 5V | 2.5V @ 7mA | 6.5nC @ 5V | 7600pF @ 40V | - | - | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS 2N-CH 100V BUMPED DIE |
62,904 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 1.7A | 70mOhm @ 2A, 5V | 2.5V @ 600µA | 0.73nC @ 5V | 75pF @ 50V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS 2N-CH 120V BUMPED DIE |
92,868 |
|
eGaN® | 2 N-Channel (Dual) Common Source | GaNFET (Gallium Nitride) | 120V | 3.4A | 60mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET 2 N-CH 30V 9.5A/38A DIE |
26,922 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 30V | 10A (Ta), 40A (Ta) | 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V | 2.5V @ 4mA, 2.5V @ 16mA | 4.9nC @ 15V, 19nC @ 15V | 475pF @ 15V, 1960pF @ 15V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET 2 N-CHANNEL 60V 23A DIE |
53,898 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 23A (Tj) | 4.4mOhm @ 20A, 5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS ASYMMETRICAL HALF BRID |
35,766 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 9.5A, 38A | 11.5mOhm @ 20A, 5V | 2.5V @ 2mA | 2.7nC @ 5V | 300pF @ 30V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS ASYMMETRICAL HALF BRID |
59,664 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 30V | 10A (Ta), 40A (Ta) | 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V | 2.5V @ 4mA, 2.5V @ 16mA | 4.9nC @ 15V, 19nC @ 15V | 475pF @ 15V, 1960pF @ 15V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS ASYMMETRICAL HALF BRID |
98,832 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 9.5A, 38A | 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V | 2.5V @ 3mA, 2.5V @ 12mA | 2.7nC @ 5V, 12nC @ 5V | 300pF @ 30V, 1200pF @ 30V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS ASYMMETRICAL HALF BRID |
100,422 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 9.5A, 38A | 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V | 2.5V @ 2.5mA, 2.5V @ 10mA | 2.5nC @ 5V, 10nC @ 5V | 300pF @ 40V, 1100pF @ 40V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET 3 N-CH 60V/100V 9BGA |
23,286 |
|
eGaN® | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | GaNFET (Gallium Nitride) | 60V, 100V | 1.7A, 500mA | 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V | 2.5V @ 100µA, 2.5V @ 20µA | 0.22nC @ 5V, 0.044nC @ 5V | 22pF @ 30V, 7pF @ 30V | - | -40°C ~ 150°C (TJ) | Surface Mount | 9-VFBGA | 9-BGA (1.35x1.35) |
|
|
|
EPC |
GANFET 3 N-CH 100V 9BGA |
36,030 |
|
eGaN® | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | GaNFET (Gallium Nitride) | 100V | 1.7A, 500mA | 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V | 2.5V @ 100µA, 2.5V @ 20µA | 0.16nC @ 5V, 0.044nC @ 5V | 16pF @ 50V, 7pF @ 50V | - | -40°C ~ 150°C (TJ) | Surface Mount | 9-VFBGA | 9-BGA (1.35x1.35) |
|
|
|
EPC |
GANFET 2NCH 120V 3.4A DIE |
4,680 |
|
eGaN® | 2 N-Channel (Dual) Common Source | GaNFET (Gallium Nitride) | 120V | 3.4A | 60mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V | - | -40°C ~ 150°C (TJ) | - | Die | Die |
|
|
|
EPC |
GANFET 2NCH 100V 23A DIE |
16,584 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET 2NCH 80V 9.5A DIE |
5,076 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 9.5A | 14.5mOhm @ 20A, 5V | 2.5V @ 2.5mA | 2.5nC @ 5V | 300pF @ 40V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS ASYMMETRICAL HALF BRID |
2,430 |
|
- | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 30V | 16A (Ta) | 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V | 2.5V @ 5mA | 2.2nC @ 5V, 5.7nC @ 5V | 230pF @ 15V, 590pF @ 15V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS 3N-CH 100V BUMPED DIE |
4,140 |
|
eGaN® | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | GaNFET (Gallium Nitride) | 100V | 1.7A, 500mA | 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V | 2.5V @ 100µA, 2.5V @ 20µA | 0.16nC @ 5V, 0.044nC @ 5V | 16pF @ 50V, 7pF @ 50V | - | -40°C ~ 150°C (TJ) | Surface Mount | 9-VFBGA | 9-BGA (1.35x1.35) |
|
|
|
EPC |
GAN TRANS 2N-CH 30V BUMPED DIE |
2,502 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 30V | 10A (Ta), 40A (Ta) | 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V | 2.5V @ 4mA, 2.5V @ 16mA | 4.9nC @ 15V, 19nC @ 15V | 475pF @ 15V, 1960pF @ 15V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS 2N-CH 60V BUMPED DIE |
3,384 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 9.5A, 38A | 11.5mOhm @ 20A, 5V | 2.5V @ 2mA | 2.7nC @ 5V | 300pF @ 30V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS 2N-CH 60V BUMPED DIE |
6,804 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 23A | 4.4mOhm @ 20A, 5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS 2N-CH 80V BUMPED DIE |
5,076 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 23A | 5.5mOhm @ 20A, 5V | 2.5V @ 7mA | 6.5nC @ 5V | 760pF @ 40V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS 2N-CH 100V BUMPED DIE |
3,744 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS 2N-CH 80V BUMPED DIE |
5,796 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 9.5A, 38A | 14.5mOhm @ 20A, 5V | 2.5V @ 2.5mA | 2.5nC @ 5V | 300pF @ 40V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |