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Infineon Technologies 整流器-單

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類別半導體 / 二極管與整流器 / 整流器-單
制造商Infineon Technologies
記錄 720
頁面 13/24
圖片
型號
制造商
描述
庫存
數量
系列
二極管類型
電壓-直流反向(Vr)(最大值)
電流-平均整流(Io)
電壓-正向(Vf)(最大值)@如果
速度
反向恢復時間(trr)
當前-反向泄漏@ Vr
電容@ Vr,F
安裝類型
包裝/箱
供應商設備包裝
工作溫度-結點
BAT 60B E6433
Infineon Technologies
DIODE SCHOTTKY 10V 3A SOD323-2
2,124
-
Schottky
10V
3A (DC)
600mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
25µA @ 8V
30pF @ 5V, 1MHz
Surface Mount
SC-76, SOD-323
PG-SOD323-2
150°C (Max)
BAT 64-02W E6327
Infineon Technologies
DIODE SCHOTTKY 40V 120MA SCD80-2
8,352
-
Schottky
40V
120mA
750mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 30V
6pF @ 1V, 1MHz
Surface Mount
SC-80
SCD-80
150°C (Max)
IDH04S60CAKSA1
Infineon Technologies
DIODE SCHOTTKY 600V 4A TO220-2
4,248
CoolSiC™+
Silicon Carbide Schottky
600V
4A (DC)
1.9V @ 4A
No Recovery Time > 500mA (Io)
0ns
50µA @ 600V
130pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-2
-55°C ~ 175°C
IDH05S60CAKSA1
Infineon Technologies
DIODE SCHOTTKY 600V 5A TO220-2
8,334
CoolSiC™+
Silicon Carbide Schottky
600V
5A (DC)
1.7V @ 5A
No Recovery Time > 500mA (Io)
0ns
70µA @ 600V
240pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-2
-55°C ~ 175°C
IDH06S60CAKSA1
Infineon Technologies
DIODE SCHOTTKY 600V 6A TO220-2
4,770
CoolSiC™+
Silicon Carbide Schottky
600V
6A (DC)
1.7V @ 6A
No Recovery Time > 500mA (Io)
0ns
80µA @ 600V
280pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-2
-55°C ~ 175°C
IDH08S60CAKSA1
Infineon Technologies
DIODE SCHOTTKY 600V 8A TO220-2
6,246
CoolSiC™+
Silicon Carbide Schottky
600V
8A (DC)
1.7V @ 8A
No Recovery Time > 500mA (Io)
0ns
100µA @ 600V
310pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-2
-55°C ~ 175°C
IDH10S60CAKSA1
Infineon Technologies
DIODE SCHOTTKY 600V 10A TO220-2
3,024
CoolSiC™+
Silicon Carbide Schottky
600V
10A (DC)
1.7V @ 10A
No Recovery Time > 500mA (Io)
0ns
140µA @ 600V
480pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-2
-55°C ~ 175°C
IDH12S60CAKSA1
Infineon Technologies
DIODE SCHOTTKY 600V 12A TO220-2
630
CoolSiC™+
Silicon Carbide Schottky
600V
12A (DC)
1.7V @ 12A
No Recovery Time > 500mA (Io)
0ns
160µA @ 600V
530pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-2
-55°C ~ 175°C
IDH16S60CAKSA1
Infineon Technologies
DIODE SCHOTTKY 600V 16A TO220-2
242
CoolSiC™+
Silicon Carbide Schottky
600V
16A (DC)
1.7V @ 16A
No Recovery Time > 500mA (Io)
0ns
200µA @ 600V
650pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-2
-55°C ~ 175°C
MMBD914LT3HTMA1
Infineon Technologies
DIODE GEN PURP 100V 250MA SOT23
6,858
-
Standard
100V
250mA (DC)
1.25V @ 150mA
Fast Recovery =< 500ns, > 200mA (Io)
4ns
100nA @ 75V
2pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
150°C (Max)
SDB06S60
Infineon Technologies
DIODE SCHOTTKY 600V 6A D2PAK
2,124
CoolSiC™+
Silicon Carbide Schottky
600V
6A (DC)
1.7V @ 6A
No Recovery Time > 500mA (Io)
0ns
200µA @ 600V
300pF @ 0V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D²PAK
-55°C ~ 175°C
SDD04S60
Infineon Technologies
DIODE SCHOTTKY 600V 4A TO252-3
7,272
CoolSiC™+
Silicon Carbide Schottky
600V
4A (DC)
1.9V @ 4A
No Recovery Time > 500mA (Io)
0ns
200µA @ 600V
150pF @ 0V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
P-TO252-3
-55°C ~ 175°C
SDP10S30
Infineon Technologies
DIODE SCHOTTKY 300V 10A TO220-3
7,902
CoolSiC™+
Silicon Carbide Schottky
300V
10A (DC)
1.7V @ 10A
No Recovery Time > 500mA (Io)
0ns
200µA @ 300V
600pF @ 0V, 1MHz
Through Hole
TO-220-3
PG-TO220-3
-55°C ~ 175°C
SDT05S60
Infineon Technologies
DIODE SCHOTTKY 600V 5A TO220-2
3,856
CoolSiC™+
Silicon Carbide Schottky
600V
5A (DC)
1.7V @ 5A
No Recovery Time > 500mA (Io)
0ns
200µA @ 600V
170pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-2
-55°C ~ 175°C
SDT08S60
Infineon Technologies
DIODE SCHOTTKY 600V 8A TO220-2
331
CoolSiC™+
Silicon Carbide Schottky
600V
8A (DC)
1.7V @ 8A
No Recovery Time > 500mA (Io)
0ns
300µA @ 600V
280pF @ 0V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-2
-55°C ~ 175°C
SDT10S60
Infineon Technologies
DIODE SCHOTTKY 600V 10A TO220-2
8,658
CoolSiC™+
Silicon Carbide Schottky
600V
10A (DC)
1.7V @ 10A
No Recovery Time > 500mA (Io)
0ns
350µA @ 600V
350pF @ 0V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-2
-55°C ~ 175°C
SIDC01D120H6
Infineon Technologies
DIODE GEN PURP 1.2KV 600MA WAFER
4,320
-
Standard
1200V
600mA (DC)
1.6V @ 600mA
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC01D60C6
Infineon Technologies
DIODE GEN PURP WAFER
4,284
-
Standard
-
-
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC02D60C6X1SA4
Infineon Technologies
DIODE GEN PURP 600V 6A WAFER
2,880
-
Standard
600V
6A (DC)
1.95V @ 6A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
SIDC02D60F6X1SA1
Infineon Technologies
DIODE GEN PURP 600V 3A WAFER
8,100
-
Standard
600V
3A (DC)
1.6V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 150°C
SIDC03D120F6X1SA1
Infineon Technologies
DIODE GEN PURP 1.2KV 2A WAFER
8,226
-
Standard
1200V
2A (DC)
2.1V @ 2A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC03D120H6X1SA3
Infineon Technologies
DIODE GEN PURP 1.2KV 3A WAFER
8,046
-
Standard
1200V
3A (DC)
1.6V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC03D60C6X1SA2
Infineon Technologies
DIODE GEN PURP 600V 10A WAFER
2,106
-
Standard
600V
10A (DC)
1.95V @ 10A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
SIDC03D60F6X1SA2
Infineon Technologies
DIODE GEN PURP 600V 6A WAFER
6,012
-
Standard
600V
6A (DC)
1.6V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 150°C
SIDC04D60F6X1SA3
Infineon Technologies
DIODE GEN PURP 600V 9A WAFER
4,950
-
Standard
600V
9A (DC)
1.6V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 150°C
SIDC05D60C6X1SA2
Infineon Technologies
DIODE GEN PURP 600V 15A WAFER
2,754
-
Standard
600V
15A (DC)
1.95V @ 15A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
SIDC06D120E6X1SA3
Infineon Technologies
DIODE GEN PURP 1.2KV 5A WAFER
3,492
-
Standard
1200V
5A (DC)
1.9V @ 5A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC06D120F6X1SA2
Infineon Technologies
DIODE GEN PURP 1.2KV 5A WAFER
6,300
-
Standard
1200V
5A (DC)
2.1V @ 5A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC06D120H6X1SA4
Infineon Technologies
DIODE GEN PURP 1.2KV 7.5A WAFER
8,298
-
Standard
1200V
7.5A (DC)
1.6V @ 7.5A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC06D60AC6X1SA1
Infineon Technologies
DIODE GEN PURP 600V 20A WAFER
7,668
-
Standard
600V
20A (DC)
1.95V @ 20A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C