Infineon Technologies 晶體管-FET，MOSFET-陣列
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-陣列
制造商Infineon Technologies
記錄 393
頁面 5/14
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | FET功能 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | 輸入電容（Ciss）（最大值）@ Vds | 功率-最大 | 工作溫度 | 安裝類型 | 包裝/箱 | 供應商設備包裝 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET 2N-CH 20V 2.1A 6TSOP |
6,354 |
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Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate, 2.5V Drive | 20V | 2.1A | 70mOhm @ 2.1A, 4.5V | 1.2V @ 11µA | 2.1nC @ 4.5V | 419pF @ 10V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | PG-TSOP-6-1 |
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Infineon Technologies |
MOSFET 2P-CH 30V 1.5A 6TSOP |
3,294 |
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Automotive, AEC-Q101, OptiMOS™ | 2 P-Channel (Dual) | Logic Level Gate, 4.5V Drive | 30V | 1.5A | 140mOhm @ 1.5A, 10V | 2V @ 6.3µA | 2.9nC @ 10V | 294pF @ 15V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | PG-TSOP-6-6 |
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Infineon Technologies |
MOSFET 2N-CH 30V 2.3A 6TSOP |
6,876 |
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Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate, 4.5V Drive | 30V | 2.3A | 57mOhm @ 2.3A, 10V | 2V @ 11µA | 1.6nC @ 5V | 275pF @ 15V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | PG-TSOP-6-6 |
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Infineon Technologies |
MOSFET 2N-CH 30V 3.5A 8-SOIC |
4,266 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 3.5A | 100mOhm @ 2.2A, 10V | 1V @ 250µA | 14nC @ 10V | 190pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 30V 15A TISON8 |
6,660 |
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OptiMOS™ | 2 N Channel (Dual Buck Chopper) | Standard | 30V | 15A | 5mOhm @ 20A, 10V | 2V @ 250µA | 17nC @ 10V | 1157pF @ 15V | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TISON-8 |
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Infineon Technologies |
MOSFET 2N-CH 30V 11A 8PQFN |
8,154 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 11A | 14.9mOhm @ 10A, 10V | 2.35V @ 25µA | 15nC @ 10V | 1165pF @ 10V | 2.7W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-PQFN (3.3x3.3), Power33 |
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Infineon Technologies |
MOSFET 2N-CH 8TDSON |
7,560 |
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Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Standard | 100V | 16A | 61mOhm @ 16A, 10V | 3.5V @ 9µA | 7nC @ 10V | 490pF @ 25V | 29W | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-PowerVDFN | PG-TDSON-8-10 |
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Infineon Technologies |
MOSFET 2N-CH 8TDSON |
2,790 |
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Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 100V | 16A | 61mOhm @ 16A, 10V | 2.1V @ 90µA | 11nC @ 10V | 845pF @ 25V | 29W | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-PowerVDFN | PG-TDSON-8-10 |
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Infineon Technologies |
MOSFET N/P-CH 60V 2A 8-SOIC |
7,974 |
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SIPMOS® | N and P-Channel | Standard | 60V | 3A, 2A | 120mOhm @ 3A, 10V | 4V @ 20µA | 15.5nC @ 10V | 340pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | PG-DSO-8 |
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Infineon Technologies |
MOSFET 2N-CH 30V 6.4A/9.7A 8SOIC |
4,320 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6.4A, 9.7A | 22.6mOhm @ 6.4A, 10V | 2.25V @ 25µA | 6.9nC @ 4.5V | 580pF @ 15V | 1.4W, 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2P-CH 20V 4A 8DSO |
5,382 |
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OptiMOS™ | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4A | 67mOhm @ 4.6A, 4.5V | 1.2V @ 25µA | 10nC @ 4.5V | 1095pF @ 15V | 1.6W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | PG-DSO-8 |
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Infineon Technologies |
MOSFET 2P-CH 20V 5A 8DSO |
4,014 |
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OptiMOS™ | 2 P-Channel (Dual) | Logic Level Gate | 20V | 5A | 45mOhm @ 5.7A, 4.5V | 1.2V @ 44µA | 16nC @ 4.5V | 1650pF @ 15V | 1.6W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | PG-DSO-8 |
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Infineon Technologies |
MOSFET 2N-CH 20V 15A DIRECTFET |
4,788 |
|
HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 20V | 15A | 4.9mOhm @ 15A, 4.5V | 1.1V @ 35µA | 54nC @ 10V | 2245pF @ 10V | 1.7W | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SA | DIRECTFET™ SA |
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Infineon Technologies |
MOSFET 2N-CH 8TDSON |
6,498 |
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Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Standard | 40V | 20A | 12.2mOhm @ 17A, 10V | 4V @ 15µA | 18nC @ 10V | 1470pF @ 25V | 41W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
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Infineon Technologies |
MOSFET 2N-CH 30V 17A/32A TISON8 |
2,916 |
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OptiMOS™ | 2 N-Channel (Dual) Asymmetrical | Logic Level Gate, 4.5V Drive | 30V | 17A, 32A | 5mOhm @ 20A, 10V | 2V @ 250µA | 10nC @ 4.5V | 1160pF @ 15V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TISON-8 |
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Infineon Technologies |
MOSFET 2N-CH 30V 17A/32A TISON8 |
5,850 |
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OptiMOS™ | 2 N-Channel (Dual) Asymmetrical | Logic Level Gate, 4.5V Drive | 30V | 17A, 32A | 5mOhm @ 20A, 10V | 2V @ 250µA | 10nC @ 4.5V | 1160pF @ 15V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TISON-8 |
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Infineon Technologies |
MOSFET N/P-CH 20V 8TDSON |
5,184 |
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Automotive, AEC-Q101, OptiMOS™ | N and P-Channel Complementary | Logic Level Gate, 2.5V Drive | 20V | 5.1A, 3.2A | 55mOhm @ 5.1A, 4.5V | 1.4V @ 110µA | 2.8nC @ 4.5V | 419pF @ 10V | 2.5W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TSDSON-8 |
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Infineon Technologies |
MOSFET 2N-CH 8TDSON |
3,454 |
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Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 100V | 20A | 35mOhm @ 17A, 10V | 2.1V @ 16µA | 17.4nC @ 10V | 1105pF @ 25V | 43W | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-PowerVDFN | PG-TDSON-8-10 |
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Infineon Technologies |
MOSFET 2N-CH 8TDSON |
2,952 |
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Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Standard | 40V | 20A | 12.2mOhm @ 17A, 10V | 4V @ 15µA | 18nC @ 10V | 1470pF @ 25V | 41W | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-PowerVDFN | PG-TDSON-8-10 |
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Infineon Technologies |
MOSFET 2N-CH 55V 20A TDSON-8-4 |
3,690 |
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OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 55V | 20A | 50mOhm @ 15A, 10V | 2V @ 19µA | 17nC @ 10V | 560pF @ 25V | 51W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
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Infineon Technologies |
MOSFET 2N-CH 8TDSON |
5,526 |
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Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 40V | 20A | 8.2mOhm @ 17A, 10V | 2.2V @ 22µA | 39nC @ 10V | 3050pF @ 25V | 54W | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-PowerVDFN | PG-TDSON-8-10 |
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Infineon Technologies |
MOSFET 2N-CH 8TDSON |
4,122 |
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Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 55V | 20A | 50mOhm @ 15A, 10V | 2V @ 19µA | 17nC @ 10V | 560pF @ 25V | 51W | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-PowerVDFN | PG-TDSON-8-10 |
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Infineon Technologies |
MOSFET 2N-CH 8TDSON |
8,208 |
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Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 60V | 20A | 13.7mOhm @ 17A, 10V | 2.2V @ 20µA | 39nC @ 10V | 2890pF @ 25V | 50W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
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Infineon Technologies |
MOSFET 2N-CH 8TDSON |
7,038 |
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Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 60V | 20A | 13.7mOhm @ 17A, 10V | 2.2V @ 20µA | 39nC @ 10V | 2890pF @ 25V | 50W | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-PowerVDFN | PG-TDSON-8-10 |
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Infineon Technologies |
MOSFET 2N-CH 8TDSON |
7,254 |
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Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Standard | 100V | 20A | 36mOhm @ 17A, 10V | 3.5V @ 16µA | 15nC @ 10V | 990pF @ 25V | 43W | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-PowerVDFN | PG-TDSON-8-10 |
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Infineon Technologies |
MOSFET N/P-CH 30V 3.5A/2.3A 8SO |
6,732 |
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HEXFET® | N and P-Channel | Logic Level Gate | 30V | 3.5A, 2.3A | 100mOhm @ 2.2A, 10V | 3V @ 250µA | 14nC @ 10V | 190pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
TRENCH <= 40V |
6,480 |
|
- | 2 N-Channel (Dual) | Standard | 40V | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET 2P-CH 20V 7A 8DSO |
7,542 |
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OptiMOS™ | 2 P-Channel (Dual) | Logic Level Gate | 20V | 7A | 21mOhm @ 8.2A, 4.5V | 1.2V @ 100µA | 39nC @ 4.5V | 3750pF @ 15V | 1.6W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | P-DSO-8 |
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Infineon Technologies |
MOSFET 2N-CH 55V 5A 8DSO |
2,664 |
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OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 55V | 5A | 35mOhm @ 2.5A, 10V | 2V @ 30µA | 26nC @ 10V | 870pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | P-DSO-8 |
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Infineon Technologies |
MOSFET 2P-CH 20V 4A 8SOIC |
4,950 |
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HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4.3A | 90mOhm @ 2.2A, 4.5V | 1.5V @ 250µA | 22nC @ 4.5V | 610pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |