晶體管-FET，MOSFET-陣列
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-陣列
記錄 3,829
頁面 21/128
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | FET功能 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | 輸入電容（Ciss）（最大值）@ Vds | 功率-最大 | 工作溫度 | 安裝類型 | 包裝/箱 | 供應商設備包裝 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Texas Instruments |
MOSFET 2N-CH 30V 25A 5PTAB |
47,136 |
|
NexFET™ | 2 N-Channel (Half Bridge) | Logic Level Gate | 30V | 25A | 9.6mOhm @ 15A, 10V | 1.9V @ 250µA | 4.1nC @ 4.5V | 736pF @ 15V | 6W | -55°C ~ 150°C (TJ) | Surface Mount | 5-LGA | 5-PTAB (5x3.5) |
|
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|
Diodes Incorporated |
MOSFET 2N-CH 60V 4.3A 8-SOIC |
15,234 |
|
- | 2 N-Channel (Dual) | Logic Level Gate | 60V | 4.3A | 40mOhm @ 8.2A, 10V | 3V @ 250µA | 24.2nC @ 5V | 1407pF @ 40V | 1.25W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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|
ON Semiconductor |
MOSFET 2N-CH 8MLP |
26,556 |
|
PowerTrench® | 2 N-Channel (Dual) Common Drain | Logic Level Gate | - | - | 4.3mOhm @ 27A, 10V | 3V @ 250µA | 49nC @ 10V | 3215pF @ 15V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | Powerclip-33 |
|
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|
Texas Instruments |
MOSFET 2 N-CH 40V 22-VSON-CLIP |
18,078 |
|
NexFET™ | 2 N-Channel (Half Bridge) | Standard | 40V | - | 0.95mOhm @ 30A, 10V | 2.3V @ 250µA | 88nC @ 4.5V | 12400pF @ 20V | 12W | -55°C ~ 150°C (TJ) | Surface Mount | 22-PowerTFDFN | 22-VSON-CLIP (5x6) |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 200V 9.1A TO-220FP |
8,112 |
|
- | 2 N-Channel (Dual) | Standard | 200V | 9.1A | 100mOhm @ 5.5A, 10V | 4.9V @ 100µA | 29nC @ 10V | 1240pF @ 25V | 21W | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 Full Pack | TO-220-5 Full-Pak |
|
|
|
Advanced Linear Devices Inc. |
MOSFET 4P-CH 10.6V 14SOIC |
19,368 |
|
- | 4 P-Channel, Matched Pair | Standard | 10.6V | - | 1800Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
|
|
|
Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8SOIC |
9,960 |
|
EPAD® | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 500Ohm @ 5.9V | 3.35V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
|
Advanced Linear Devices Inc. |
MOSFET 2P-CH 10.6V 8DIP |
7,974 |
|
- | 2 P-Channel (Dual) Matched Pair | Standard | 10.6V | - | 1800Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
|
Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8SOIC |
8,946 |
|
EPAD® | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | 12mA, 3mA | 500Ohm @ 4.8V | 810mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
|
EPC |
GANFET TRANS SYM HALF BRDG 80V |
45,828 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 23A | 5.5mOhm @ 20A, 5V | 2.5V @ 7mA | 6.5nC @ 5V | 7600pF @ 40V | - | - | Surface Mount | Die | Die |
|
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|
Sanken |
MOSFET 4N-CH 60V 7A 15-SIP |
18,336 |
|
- | 4 N-Channel | Standard | 60V | 7A | 100mOhm @ 3.5A, 10V | 2V @ 250µA | - | 660pF @ 10V | 4.8W | 150°C (TJ) | Through Hole | 15-SIP Exposed Tab, Formed Leads | 15-ZIP |
|
|
|
Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8DIP |
7,326 |
|
- | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 75Ohm @ 5V | 1V @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
|
Advanced Linear Devices Inc. |
MOSFET 2P-CH 10.6V 8DIP |
7,110 |
|
- | 2 P-Channel (Dual) Matched Pair | Standard | 10.6V | - | 270Ohm @ 5V | 1.2V @ 10µA | - | 10pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
|
Sanken |
MOSFET 3N/3P-CH 60V 6A 12-SIP |
17,796 |
|
- | 3 N and 3 P-Channel (3-Phase Bridge) | Logic Level Gate | 60V | 6A | 220mOhm @ 3A, 4V | - | - | 320pF @ 10V | 5W | 150°C (TJ) | Through Hole | 12-SIP | 12-SIP w/fin |
|
|
|
Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8SOIC |
8,136 |
|
- | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 75Ohm @ 5V | 1V @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
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|
Sanken |
MOSFET 3N/3P-CH 60V 10A 12-SIP |
13,794 |
|
- | 3 N and 3 P-Channel (3-Phase Bridge) | Standard | 60V | 10A | 140mOhm @ 5A, 4V | 2V @ 250µA | - | 460pF @ 10V | 4W | 150°C (TJ) | Through Hole | 12-SIP | 12-SIP |
|
|
|
Sanken |
MOSFET 5P-CH 60V 5A 12-SIP |
20,232 |
|
- | 5 P-Channel, Common Source | Logic Level Gate | 60V | 5A | 220mOhm @ 3A, 10V | 2V @ 250µA | - | 790pF @ 10V | 5W | 150°C (TJ) | Through Hole | 12-SIP | 12-SIP w/fin |
|
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|
Sanken |
MOSFET 3N/3P-CH 60V 10A/6A 12SIP |
2,354 |
|
- | 3 N and 3 P-Channel (3-Phase Bridge) | Logic Level Gate | 60V | 10A, 6A | 140mOhm @ 5A, 4V | - | - | 460pF @ 10V | 5W | 150°C (TJ) | Through Hole | 12-SIP | 12-SIP w/fin |
|
|
|
ON Semiconductor |
MOSFET 6N-CH 40V 150A MODULE |
60 |
|
SPM® | 6 N-Channel (3-Phase Bridge) | Logic Level Gate | 40V | 150A | 1.66mOhm @ 80A, 10V | - | - | - | 115W | 175°C (TJ) | Through Hole | 19-PowerDIP Module | Module |
|
|
|
Nexperia |
MOSFET 2P-CH 30V 0.41A 6DFN |
105,240 |
|
- | 2 P-Channel (Dual) | Standard | 30V | 410mA | 1.4Ohm @ 410mA, 4.5V | 950mV @ 250µA | 1.2nC @ 4.5V | 43.2pF @ 15V | 285mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-XFDFN Exposed Pad | DFN1010B-6 |
|
|
|
Rohm Semiconductor |
MOSFET 2N-CH 30V 0.3A EMT5 |
89,358 |
|
- | 2 N-Channel (Dual) | Standard | 30V | 300mA | 600mOhm @ 300mA, 4.5V | - | - | - | 150mW | - | Surface Mount | 6-SMD (5 Leads), Flat Lead | EMT5 |
|
|
|
Rohm Semiconductor |
MOSFET N/P-CH 30V/20V EMT6 |
254,610 |
|
- | N and P-Channel | Logic Level Gate | 30V, 20V | 100mA, 200mA | 8Ohm @ 10mA, 4V | - | 0.9nC @ 4.5V | 13pF @ 5V | 150mW | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | EMT6 |
|
|
|
ON Semiconductor |
MOSFET 2P-CH 20V 0.35A SOT-563F |
23,484 |
|
PowerTrench® | 2 P-Channel (Dual) | Logic Level Gate | 20V | 350mA | 1.2Ohm @ 350mA, 4.5V | 1.5V @ 250µA | 1.4nC @ 4.5V | 100pF @ 10V | 446mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563F |
|
|
|
Central Semiconductor Corp |
MOSFET 2N-CH 50V 0.28A SOT563 |
27,972 |
|
- | 2 N-Channel (Dual) | Standard | 50V | 280mA | 2Ohm @ 50mA, 5V | 1V @ 250µA | 0.76nC @ 4.5V | 50pF @ 25V | 350mW | -65°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET 2 P-CH 20V 4.7A 8SOP |
22,410 |
|
- | 2 P-Channel (Dual) | Standard | 20V | 4.7A (Tc) | 60mOhm @ 4.7A, 4.5V | 1.4V @ 250µA | 8.5nC @ 4.5V | 640pF @ 10V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET 2 N-CH 20V 6.5A 8TSSOP |
23,394 |
|
- | 2 N-Channel (Dual) | Standard | 20V | 6.5A (Ta) | 22mOhm @ 6.5A, 4.5V | 1V @ 250µA | 15nC @ 4.5V | 950pF @ 10V | 1.04W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
|
|
|
Panasonic Electronic Components |
MOSFET 2N-CH 20V 4A WSMINI8-F1-B |
147,042 |
|
- | 2 N-Channel (Dual) | Standard | 20V | 4A | 25mOhm @ 2A, 4V | 1.3V @ 1mA | - | 1100pF @ 10V | 150mW | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | WSMini8-F1-B |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET 2P-CH 20V 4A 2-2Y1A |
22,698 |
|
- | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4A | 95mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.6nC @ 4.5V | 290pF @ 10V | 1W | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFN (2x2) |
|
|
|
Diodes Incorporated |
MOSFET 2N-CH 12V U-WLB1818-4 |
27,048 |
|
- | 2 N-Channel (Dual) Common Drain | Logic Level Gate | - | - | - | - | 37nC @ 4.5V | - | 1.45W | -55°C ~ 150°C (TJ) | Surface Mount | 4-UFBGA, WLBGA | U-WLB1818-4 |
|
|
|
Rohm Semiconductor |
-30V PCH+PCH MIDDLE POWER MOSFET |
58,284 |
|
- | 2 P-Channel (Dual) | - | 30V | 4A | 70mOhm @ 4A, 10V | 2.5V @ 1mA | 6.7nC @ 10V | 305pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 6-PowerUDFN | HUML2020L8 |