晶體管-FET，MOSFET-陣列
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
展開過濾器
重置過濾器
應用過濾器
類別半導體 / 晶體管 / 晶體管-FET，MOSFET-陣列
記錄 3,829
頁面 39/128
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | FET功能 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | 輸入電容（Ciss）（最大值）@ Vds | 功率-最大 | 工作溫度 | 安裝類型 | 包裝/箱 | 供應商設備包裝 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
MOSFET 2P-CH 30V 2.3A 8-SOIC |
5,598 |
|
HEXFET® | 2 P-Channel (Dual) | Standard | 30V | 2.3A | 250mOhm @ 1A, 10V | 1V @ 250µA | 12nC @ 10V | 190pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Infineon Technologies |
MOSFET 2P-CH 30V 3.6A 8-SOIC |
4,068 |
|
HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 30V | 3.6A | 100mOhm @ 1.8A, 10V | 1V @ 250µA | 25nC @ 10V | 440pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 8TDSON |
7,128 |
|
Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Standard | 100V | 16A | 61mOhm @ 16A, 10V | 3.5V @ 9µA | 7nC @ 10V | 490pF @ 25V | 29W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 20V 10A 8-SOIC |
7,470 |
|
HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 20V | 10A | 13.4mOhm @ 10A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 960pF @ 10V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 30V 7.6A/11A 8-SOIC |
7,110 |
|
HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 7.6A, 11A | 16.2mOhm @ 7.6A, 10V | 2.25V @ 25µA | 11nC @ 4.5V | 910pF @ 15V | 1.4W, 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Infineon Technologies |
MOSFET 2P-CH 20V 4.7A 8SOIC |
2,610 |
|
OptiMOS™ | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4.7A | 67mOhm @ 4.7A, 4.5V | 1.2V @ 25µA | 23.9nC @ 4.5V | 920pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | P-DSO-8 |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 30V 7.8A/8.9A 8SOIC |
7,704 |
|
HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 7.8A, 8.9A | 21.8mOhm @ 7.8A, 10V | 2.25V @ 25µA | 6.9nC @ 4.5V | 600pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Infineon Technologies |
MOSFET N/P-CH 30V 8-SOIC |
6,462 |
|
HEXFET® | N and P-Channel | Standard | 30V | 5.8A, 4.3A | 45mOhm @ 5.8A, 10V | 1V @ 250µA | 25nC @ 10V | 520pF @ 25V | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 30V 9.1A/11A 8-SOIC |
6,624 |
|
HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 9.1A, 11A | 16.4mOhm @ 9.1A, 10V | 2.35V @ 25µA | 10nC @ 4.5V | 850pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 20V 10A/12A 8-SOIC |
4,374 |
|
HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 20V | 10A, 12A | 9.3mOhm @ 12A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 900pF @ 10V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Infineon Technologies |
MOSFET N/P-CH 20V 8-SOIC |
8,982 |
|
HEXFET® | N and P-Channel | Logic Level Gate | 20V | 6.6A, 5.3A | 29mOhm @ 6A, 4.5V | 700mV @ 250µA | 27nC @ 4.5V | 900pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Infineon Technologies |
MOSFET 2P-CH 55V 3.4A 8-SOIC |
6,246 |
|
HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 55V | 3.4A | 105mOhm @ 3.4A, 10V | 1V @ 250µA | 38nC @ 10V | 690pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Infineon Technologies |
MOSFET 2 N-CH 30V 20A WISON-8 |
4,122 |
|
OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate, 4.5V Drive | 30V | 20A (Tc) | 18mOhm @ 9A, 10V | 2V @ 250µA | 2.6nC @ 4.5V | 360pF @ 15V | 17W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PG-WISON-8 |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 8TDSON |
8,208 |
|
Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 40V | 20A | 11.6mOhm @ 17A, 10V | 2.2V @ 15µA | 26nC @ 10V | 1990pF @ 25V | 41W | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-PowerVDFN | PG-TDSON-8-10 |
|
|
|
Infineon Technologies |
DIFFERENTIATED MOSFETS |
2,268 |
|
OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate, 4.5V Drive | 30V | 9.5A (Ta), 25A (Tc) | 9.5mOhm @ 9A, 10V | 2V @ 250µA | 5.6nC @ 4.5V | 800pF @ 15V | 1.9W (Ta), 31W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PG-WISON-8 |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 30V 11.5A 8TDSON |
4,644 |
|
OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 30V | 11.5A | 7.2mOhm @ 20A, 10V | 2.2V @ 250µA | 41nC @ 10V | 3500pF @ 15V | 57W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
|
|
|
Infineon Technologies |
MOSFET 2P-CH 30V 8A 8-SOIC |
4,500 |
|
HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 30V | 8A | 21mOhm @ 8A, 10V | 2.5V @ 250µA | 78nC @ 10V | 2675pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 8TISON |
7,146 |
|
OptiMOS™ | 2 N-Channel | Standard | - | 17A (Ta) | 5mOhm @ 7A, 10V | 2V @ 250µA | - | - | - | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TISON-8 |
|
|
|
Infineon Technologies |
MOSFET 2P-CH 30V 7A 8DSO |
7,848 |
|
OptiMOS™ | 2 P-Channel (Dual) | Logic Level Gate | 30V | 7A | 21mOhm @ 8.2A, 10V | 2V @ 100µA | 49nC @ 10V | 2678pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | PG-DSO-8 |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 50V 3A 8SOIC |
8,280 |
|
Automotive, AEC-Q101, HEXFET® | 2 N-Channel (Dual) | Standard | 50V | 3A | 130mOhm @ 3A, 10V | 3V @ 250µA | 15nC @ 10V | 255pF @ 25V | 2.4W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 40V 20A TDSON-8 |
5,256 |
|
OptiMOS™ | 2 N-Channel (Dual) | Standard | 40V | 20A | 7.6mOhm @ 17A, 10V | 4V @ 30µA | 36nC @ 10V | 2940pF @ 25V | 65W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 8TDSON |
4,986 |
|
Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Standard | 40V | 20A | 7.6mOhm @ 17A, 10V | 4V @ 30µA | 36nC @ 10V | 2940pF @ 25V | 65W | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-PowerVDFN | PG-TDSON-8-10 |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 8TDSON |
8,082 |
|
Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 40V | 20A | 7.2mOhm @ 17A, 10V | 2.2V @ 30µA | 50nC @ 10V | 3980pF @ 25V | 65W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 30V 6.5A 8SOIC |
5,958 |
|
HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6.9A | 29mOhm @ 6.9A, 10V | 3V @ 250µA | 33nC @ 10V | 755pF @ 25V | 2.4W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Infineon Technologies |
MOSFET 2P-CH 55V 3.4A 8SOIC |
5,130 |
|
Automotive, AEC-Q101, HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 55V | 3.4A | 105mOhm @ 3.4A, 10V | 3V @ 250µA | 38nC @ 10V | 690pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 55V 5.1A 8SOIC |
6,840 |
|
Automotive, AEC-Q101, HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 55V | 5.1A | 50mOhm @ 5.1A, 10V | 3V @ 250µA | 44nC @ 10V | 780pF @ 25V | 2.4W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Infineon Technologies |
MOSFET 2 N-CH 1200V 100A MODULE |
8,316 |
|
CoolSiC™+ | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 100A | 11mOhm @ 100A, 15V | 5.55V @ 40mA | 250nC @ 15V | 7950pF @ 800V | - | -40°C ~ 150°C (TJ) | Chassis Mount | Module | Module |
|
|
|
Rohm Semiconductor |
SIC POWER MODULE-1200V-80A |
4,878 |
|
- | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 80A (Tc) | - | 4V @ 13.2mA | - | 800pF @ 10V | 600W | 175°C (TJ) | Chassis Mount | Module | Module |
|
|
|
Rohm Semiconductor |
MOSFET 2N-CH 1200V 300A |
7,416 |
|
- | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 300A (Tc) | - | 4V @ 68mA | - | 35000pF @ 10V | 1875W | -40°C ~ 150°C (TJ) | Chassis Mount | Module | Module |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 100V 11A TO-220FP-5 |
8,496 |
|
- | 2 N-Channel (Dual) | Standard | 100V | 11A | 72.5mOhm @ 6.6A, 10V | 5V @ 250µA | 18nC @ 10V | 490pF @ 50V | 18W | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 Full Pack | TO-220-5 Full-Pak |