晶體管-FET，MOSFET-陣列
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-陣列
記錄 3,829
頁面 38/128
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | FET功能 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | 輸入電容（Ciss）（最大值）@ Vds | 功率-最大 | 工作溫度 | 安裝類型 | 包裝/箱 | 供應商設備包裝 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Texas Instruments |
25V POWERBLOCK N CH MOSFET |
4,014 |
|
NexFET™ | 2 N-Channel (Half Bridge) | Logic Level Gate, 5V Drive | 25V | 40A (Ta) | 4.5mOhm @ 20A, 5V, 0.8mOhm @ 20A, 5V | 1.85V @ 250µA, 1.5V @ 250µA | 7.9nC @ 4.5V, 19.3nC @ 4.5V | 1.04nF @ 12.5V, 2.51nF @ 12.5V | 12W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-VSON-CLIP (5x6) |
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Texas Instruments |
MOSFET 2N-CH 30V 8LSON |
8,640 |
|
NexFET™ | 2 N-Channel (Dual) Asymmetrical | Standard | 30V | - | - | 1.9V @ 250µA | 13.7nC @ 4.5V | 1860pF @ 15V | 12W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerLDFN | 8-LSON (5x6) |
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Texas Instruments |
MOSFET 2N-CH 30V 40A 8LSON |
8,172 |
|
NexFET™ | 2 N-Channel (Dual) | Logic Level Gate | 30V | 40A | 5.9mOhm @ 20A, 8V | 2.1V @ 250µA | 10.9nC @ 4.5V | 1770pF @ 15V | 12W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerLDFN | 8-LSON (5x6) |
|
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Vishay Siliconix |
MOSFET 2N-CH 30V 4.9A 1212-8 |
6,930 |
|
- | 2 N-Channel (Dual) | Logic Level Gate | 30V | 4.9A | 36mOhm @ 6.8A, 10V | 1.6V @ 250µA | 11nC @ 4.5V | - | 1.3W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 Dual | PowerPAK® 1212-8 Dual |
|
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|
Texas Instruments |
MOSFET 2N-CH 25V 50A 8SON |
2,614 |
|
NexFET™ | 2 N-Channel (Half Bridge) | Logic Level Gate | 25V | 50A | - | 2.1V @ 250µA | 12.6nC @ 4.5V | 2060pF @ 12.5 | 13W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerLDFN | 8-LSON (5x6) |
|
|
|
Vishay Siliconix |
MOSFET 2 N-CH 40V POWERPAK8X8 |
7,578 |
|
Automotive, AEC-Q101, TrenchFET® | 2 N-Channel (Dual) | Standard | 40V | 100A (Tc) | 3.4mOhm @ 20A, 10V | 3.5V @ 250µA | 75nC @ 10V | 5900pF @ 20V | 75W | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 8 x 8 Dual | PowerPAK® 8 x 8 Dual |
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|
ON Semiconductor |
MOSFET 2N-CH 40V 23A |
6,336 |
|
PowerTrench® | 2 N-Channel (Dual) | Standard | 40V | 23A | 2.6mOhm @ 23A, 10V | 3V @ 250µA | 56nC @ 10V | 4230pF @ 20V | 2.1W | -55°C ~ 150°C (TJ) | Surface Mount | 12-PowerWDFN | 12-Power3.3x5 |
|
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|
ON Semiconductor |
MOSFET 4N-CH 100V 3.1A 12-MLP |
2,232 |
|
GreenBridge™ PowerTrench® | 4 N-Channel (H-Bridge) | Standard | 100V | 3.1A | 110mOhm @ 3A, 10V | 4V @ 250µA | 5nC @ 10V | 215pF @ 15V | 1.9W | -55°C ~ 150°C (TJ) | Surface Mount | 12-WDFN Exposed Pad | 12-MLP (5x4.5) |
|
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|
Vishay Siliconix |
MOSFET N&P-CH COMMON DRAIN |
3,454 |
|
Automotive, AEC-Q101, TrenchFET® | N and P-Channel, Common Drain | Standard | 40V, 200V | 30A (Tc), 20A (Tc) | 9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V | 2.5V @ 250µA, 3.5V @ 250µA | 23nC, 14nC, 30.2nC @ 10V | 1474pF, 1450pF, 1302pF @ 20V, 100V | 48W (Tc), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | Die | Die |
|
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|
ON Semiconductor |
MOSFET 2N-CH 40V 24A POWER3.3X5 |
5,112 |
|
PowerTrench® | 2 N-Channel (Dual) | Standard | 40V | 24A | 2.6mOhm @ 23A, 10V | 3V @ 250µA | 56nC @ 10V | 4230pF @ 20V | 50W | -55°C ~ 175°C (TJ) | Surface Mount | 12-PowerWDFN | 12-Power3.3x5 |
|
|
|
ON Semiconductor |
MOSFET 2N-CH 80V 11A 6-MLP |
2,646 |
|
PowerTrench® | 2 N-Channel (Dual) | Standard | 80V | 11A | 8.2mOhm @ 11A, 10V | 4V @ 250µA | 44nC @ 10V | 3050pF @ 40V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 12-PowerWDFN | 12-Power3.3x5 |
|
|
|
ON Semiconductor |
MOSFET 2N-CH 100V 10A PWR56 |
6,912 |
|
PowerTrench® | 2 N-Channel (Dual) | Logic Level Gate | 100V | 10A | 13mOhm @ 10A, 10V | 4V @ 250µA | 27nC @ 10V | 1800pF @ 50V | 2.2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-MLP (5x6), Power56 |
|
|
|
ON Semiconductor |
MOSFET 2N-CH 100V |
6,066 |
|
PowerTrench® | 2 N-Channel (Half Bridge) | Standard | 100V | 10.4A | 9.9mOhm @ 10.4A, 10V | 4V @ 250µA | 31nC @ 10V | 2230pF @ 50V | 2.2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-Power 5x6 |
|
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|
Vishay Siliconix |
MOSFET 2N-CH 150V 2.6A PPAK SO-8 |
8,136 |
|
TrenchFET® | 2 N-Channel (Dual) | Logic Level Gate | 150V | 2.6A | 105mOhm @ 4.1A, 10V | 4V @ 250µA | 26nC @ 10V | - | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual |
|
|
|
Vishay Siliconix |
MOSFET N/P-CH 20V 6TSOP |
5,562 |
|
Automotive, AEC-Q101, TrenchFET® | N and P-Channel | Standard | 20V | 3.57A (Tc), 2.5A (Tc) | 77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V | 1.5V @ 250µA | 2.5nC @ 4.5V, 3.5nC @ 4.5V | - | 1.67W | -55°C ~ 175°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP |
|
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|
Texas Instruments |
MOSFET 2 N-CH 40V 22-VSON-CLIP |
3,420 |
|
NexFET™ | 2 N-Channel (Half Bridge) | Standard | 40V | - | 0.95mOhm @ 30A, 10V | 2.3V @ 250µA | 88nC @ 4.5V | 12400pF @ 20V | 12W | -55°C ~ 150°C (TJ) | Surface Mount | 22-PowerTFDFN | 22-VSON-CLIP (5x6) |
|
|
|
Texas Instruments |
MOSFET 2 N-CH 60V 22-VSON-CLIP |
3,096 |
|
NexFET™ | 2 N-Channel (Half Bridge) | Standard | 60V | - | 2.1mOhm @ 30A, 10V | 2.5V @ 250µA | 27nC @ 4.5V | 4840pF @ 30V | 12W | -55°C ~ 150°C (TJ) | Surface Mount | 22-PowerTFDFN | 22-VSON-CLIP (5x6) |
|
|
|
Texas Instruments |
MOSFET 2 N-CH 60V 22-VSON-CLIP |
7,290 |
|
NexFET™ | 2 N-Channel (Half Bridge) | Standard | 60V | - | 2.1mOhm @ 30A, 10V | 2.5V @ 250µA | 27nC @ 4.5V | 4840pF @ 30V | 12W | -55°C ~ 150°C (TJ) | Surface Mount | 22-PowerTFDFN | 22-VSON-CLIP (5x6) |
|
|
|
EPC |
GANFET 2NCH 100V 23A DIE |
16,584 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
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|
Microchip Technology |
MOSFET N/P-CH 500V 8SOIC |
8,604 |
|
- | N and P-Channel | Standard | 500V | - | 60Ohm @ 50mA, 10V | 4V @ 1mA | - | 55pF @ 25V | - | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
|
EPC |
GANFET 2NCH 80V 9.5A DIE |
5,076 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 9.5A | 14.5mOhm @ 20A, 5V | 2.5V @ 2.5mA | 2.5nC @ 5V | 300pF @ 40V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
Transphorm |
GANFET 2N-CH 600V 70A MODULE |
8,640 |
|
- | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 600V | 70A (Tc) | 34mOhm @ 30A, 8V | - | 28nC @ 8V | 2260pF @ 100V | 470W | -40°C ~ 150°C (TJ) | Through Hole | Module | Module |
|
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|
Microsemi |
MOSFET 4N-CH 1000V 18A SP4 |
6,822 |
|
POWER MOS 7® | 4 N-Channel (H-Bridge) | Standard | 1000V (1kV) | 18A | 540mOhm @ 9A, 10V | 5V @ 2.5mA | 154nC @ 10V | 4350pF @ 25V | 357W | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
|
|
|
Skyworks Solutions |
MOSFET 8SOP |
130,446 |
|
- | - | - | - | - | - | - | - | - | - | - | Surface Mount | - | 8-SOP |
|
|
|
Infineon Technologies |
MOSFET 2P-CH 20V 1.7A MICRO8 |
2,304 |
|
HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 20V | 1.7A | 270mOhm @ 1.2A, 4.5V | 700mV @ 250µA | 8.2nC @ 4.5V | 240pF @ 15V | 1.25W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ |
|
|
|
Infineon Technologies |
MOSFET 2P-CH 30V 4.9A 8SOIC |
2,970 |
|
HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 30V | 4.9A | 58mOhm @ 4.9A, 10V | 1V @ 250µA | 34nC @ 10V | 710pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Infineon Technologies |
MOSFET 2P-CH 30V 1.7A MICRO8 |
7,614 |
|
HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 30V | 1.7A | 270mOhm @ 1.2A, 10V | 1V @ 250µA | 11nC @ 10V | 180pF @ 25V | 1.25W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ |
|
|
|
Infineon Technologies |
MOSFET 2P-CH 20V 2.3A 8-SOIC |
2,196 |
|
HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 20V | 2.3A | 250mOhm @ 1A, 10V | 3V @ 250µA | 25nC @ 10V | 290pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 30V 6.5A 8-SOIC |
8,838 |
|
HEXFET® | 2 N-Channel (Dual) | Standard | 30V | 6.5A | 29mOhm @ 5.8A, 10V | 1V @ 250µA | 33nC @ 10V | 650pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Infineon Technologies |
MOSFET N/P-CH 30V 4A/3A 8SOIC |
6,174 |
|
HEXFET® | N and P-Channel | Standard | 30V | 4A, 3A | 50mOhm @ 2.4A, 10V | 1V @ 250µA | 25nC @ 4.5V | 520pF @ 15V | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |