晶體管-FET，MOSFET-單
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
展開過濾器
重置過濾器
應用過濾器
類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 145/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Siliconix |
MOSFET N-CH 600V 43A TO247AC |
8,982 |
|
E | N-Channel | MOSFET (Metal Oxide) | 600V | 43A (Tc) | 10V | 65mOhm @ 24A, 10V | 4V @ 250µA | 182nC @ 10V | ±30V | 3600pF @ 100V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
|
|
|
ON Semiconductor |
MOSFET N-CH 600V 47A TO-3PN |
9,144 |
|
SuperFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 73mOhm @ 23.5A, 10V | 5V @ 250µA | 270nC @ 10V | ±30V | 8000pF @ 25V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 560V 32A TO-247 |
8,136 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 560V | 32A (Tc) | 10V | 110mOhm @ 20A, 10V | 3.9V @ 1.8mA | 170nC @ 10V | ±20V | 4200pF @ 25V | - | 284W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
|
|
|
STMicroelectronics |
MOSFET N-CH 650V 49A TO247 |
14,880 |
|
MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 650V | 49A (Tc) | 10V | 62mOhm @ 24.5A, 10V | 4V @ 250µA | 93nC @ 10V | ±25V | 3900pF @ 100V | - | 358W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 170A SUPER247 |
41,664 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 170A (Tc) | 10V | 9mOhm @ 100A, 10V | 5V @ 250µA | 390nC @ 10V | ±30V | 6790pF @ 25V | - | 580W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | SUPER-247™ (TO-274AA) | TO-274AA |
|
|
|
ON Semiconductor |
MOSFET N CH 600V 77A TO-247 |
20,856 |
|
SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 77A (Tc) | 10V | 41mOhm @ 39A, 10V | 3.5V @ 250µA | 380nC @ 10V | ±20V | 13700pF @ 100V | - | 592W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
|
IXYS |
MOSFET N-CH 500V 24A TO-247AD |
6,888 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 24A (Tc) | 10V | 230mOhm @ 12A, 10V | 4V @ 4mA | 160nC @ 10V | ±20V | 4200pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
|
|
|
IXYS |
MOSFET N-CHANNEL 250V 120A TO3P |
6,900 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 120A (Tc) | 10V | 12mOhm @ 60A, 10V | 4.5V @ 4mA | 122nC @ 10V | ±20V | 7870pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 600V 47A TO-247AD |
9,684 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 64mOhm @ 24A, 10V | 4V @ 250µA | 220nC @ 10V | ±20V | 9620pF @ 100V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-3P-3 Full Pack |
|
|
|
Vishay Siliconix |
MOSFET N-CH 600V 26A TO-247AC |
14,820 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 26A (Tc) | 10V | 250mOhm @ 16A, 10V | 5V @ 250µA | 180nC @ 10V | ±30V | 5020pF @ 25V | - | 470W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V 53.5A TO247 |
10,152 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 53.5A (Tc) | 10V | 70mOhm @ 17.6A, 10V | 3.5V @ 1.76mA | 170nC @ 10V | ±20V | 3900pF @ 100V | - | 391W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 61.8A TO-247 |
17,748 |
|
DTMOSIV-H | N-Channel | MOSFET (Metal Oxide) | 600V | 61.8A (Ta) | 10V | 40mOhm @ 21A, 10V | 3.5V @ 3.1mA | 135nC @ 10V | ±30V | 6500pF @ 300V | Super Junction | 400W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
|
|
STMicroelectronics |
N-CHANNEL 600V M6 POWER MOSFET |
11,148 |
|
MDmesh™ | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-247-3 | TO-247-3 |
|
|
|
IXYS |
MOSFET N-CH 650V 80A TO-247 |
8,964 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 80A (Tc) | 10V | 40mOhm @ 40A, 10V | 4.5V @ 4mA | 144nC @ 10V | ±30V | 7753pF @ 25V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
|
|
Rohm Semiconductor |
MOSFET N-CHANNEL 600V 35A TO3PF |
7,956 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 35A (Tc) | 10V | 102mOhm @ 18.1A, 10V | 5V @ 1mA | 72nC @ 10V | ±20V | 3000pF @ 25V | - | 102W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 38.8A TO-3P(N) |
7,392 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 38.8A (Ta) | 10V | 65mOhm @ 19.4A, 10V | 3.7V @ 1.9mA | 135nC @ 10V | ±30V | 4100pF @ 300V | Super Junction | 270W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V 46A TO-247-3 |
16,596 |
|
CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 46A (Tc) | 10V | 45mOhm @ 24.9A, 10V | 4V @ 1.25mA | 93nC @ 10V | ±20V | 4340pF @ 400V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
|
Transphorm |
GANFET N-CH 600V 17A TO220 |
9,192 |
|
- | N-Channel | GaNFET (Gallium Nitride) | 600V | 17A (Tc) | 10V | 180mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | ±18V | 760pF @ 480V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
GeneSiC Semiconductor |
TRANS SJT 1200V 15A |
20,400 |
|
- | - | SiC (Silicon Carbide Junction Transistor) | 1200V | 15A (Tc) | - | - | - | - | - | - | - | 106W (Tc) | 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V 46A TO-220-3 |
10,920 |
|
CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 46A (Tc) | 10V | 45mOhm @ 24.9A, 10V | 4V @ 1.25mA | 93nC @ 10V | ±20V | 4340pF @ 400V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
IXYS |
MOSFET N-CH 250V 140A TO264 |
8,724 |
|
GigaMOS™ | N-Channel | MOSFET (Metal Oxide) | 250V | 140A (Tc) | 10V | 17mOhm @ 60A, 10V | 5V @ 4mA | 255nC @ 10V | ±20V | 19000pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
|
|
|
Microsemi |
MOSFET N-CH 1200V 3.5A TO-247 |
9,228 |
|
POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 1200V | 3.5A (Tc) | 10V | 4.7Ohm @ 1.75A, 10V | 5V @ 1mA | 31nC @ 10V | ±30V | 715pF @ 25V | - | 135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 600V 80A TO247AC |
10,152 |
|
E | N-Channel | MOSFET (Metal Oxide) | 600V | 80A (Tc) | 10V | 30mOhm @ 40A, 10V | 4V @ 250µA | 443nC @ 10V | ±30V | 6900pF @ 100V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
|
|
|
IXYS |
MOSFET N-CH 200V 42A TO-247AD |
12,642 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 42A (Tc) | 10V | 60mOhm @ 500mA, 10V | 4V @ 4mA | 220nC @ 10V | ±20V | 4400pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V 77.5A TO247-3 |
8,496 |
|
CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 77.5A (Tc) | 10V | 41mOhm @ 35.5A, 10V | 4.5V @ 2.96mA | 170nC @ 10V | ±20V | 8180pF @ 100V | - | 481W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
|
|
|
IXYS |
MOSFET N-CH 70V 110A TO-264AA |
9,432 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 70V | 110A (Tc) | 10V | 6mOhm @ 55A, 10V | 4V @ 8mA | 480nC @ 10V | ±20V | 9000pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
|
|
|
STMicroelectronics |
MOSFET N-CHANNEL 950V 38A TO247 |
12,576 |
|
MDmesh™ DK5 | N-Channel | MOSFET (Metal Oxide) | 950V | 38A (Tc) | 10V | 130mOhm @ 19A, 10V | 5V @ 100µA | 100nC @ 10V | ±30V | 3480pF @ 100V | - | 450W (Tc) | -55°C ~ 150°C | Through Hole | TO-247 Long Leads | TO-247-3 |
|
|
|
STMicroelectronics |
MOSFET N-CH 650V 42A TO-247 |
21,594 |
|
MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 42A (Tc) | 10V | 63mOhm @ 21A, 10V | 5V @ 250µA | 98nC @ 10V | ±25V | 4200pF @ 100V | - | 250W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
|
|
IXYS |
MOSFET N-CH 600V 30A TO-268 |
8,946 |
|
Linear L2™ | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 240mOhm @ 15A, 10V | 4.5V @ 250µA | 335nC @ 10V | ±20V | 10700pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
|
|
|
STMicroelectronics |
MOSFET N-CH 650V TO-247 |
14,424 |
|
Automotive, AEC-Q101, MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 46A (Tc) | 10V | 49mOhm @ 23A, 10V | 5V @ 250µA | 142nC @ 10V | ±25V | 6420pF @ 100V | - | 330W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |