晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 281/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ON Semiconductor |
MOSFET N-CH 100V 43.5A TO-220 |
16,356 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 43.5A (Tc) | 10V | 39mOhm @ 21.75A, 10V | 4V @ 250µA | 62nC @ 10V | ±25V | 1800pF @ 25V | - | 146W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 8A TO-220AB |
13,068 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 39nC @ 10V | ±30V | 1100pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 200V 3.3A D2PAK |
18,408 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 3.3A (Tc) | 10V | 1.5Ohm @ 2A, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 3W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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ON Semiconductor |
MOSFET N-CH 250V 16A TO-220 |
8,448 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 16A (Tc) | 10V | 230mOhm @ 8A, 10V | 5V @ 250µA | 35nC @ 10V | ±30V | 1200pF @ 25V | - | 142W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
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|
Vishay Siliconix |
MOSFET N-CH 900V 1.7A D2PAK |
7,128 |
|
- | N-Channel | MOSFET (Metal Oxide) | 900V | 1.7A (Tc) | 10V | 8Ohm @ 1A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 490pF @ 25V | - | 3.1W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
15,972 |
|
U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 3.8mOhm @ 30A, 4.5V | 2.4V @ 500µA | 63.4nC @ 10V | ±20V | 4670pF @ 20V | - | 87W (Tc) | 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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|
Infineon Technologies |
MOSFET N-CH TO220-3 |
17,052 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 73A (Tc) | 6V, 10V | 8.3mOhm @ 73A, 10V | 3.8V @ 49µA | 37nC @ 10V | ±20V | 2730pF @ 50V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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|
ON Semiconductor |
MOSFET N-CH 600V 6.26A TO-220F |
17,400 |
|
FRFET® | N-Channel | MOSFET (Metal Oxide) | 600V | 6.26A (Tc) | 10V | 1.5Ohm @ 3.13A, 10V | 4V @ 250µA | 36nC @ 10V | ±30V | 1255pF @ 25V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 8A TO-220SIS |
5,490 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 8A (Ta) | 10V | 540mOhm @ 4A, 10V | 4.5V @ 400µA | 22nC @ 10V | ±30V | 590pF @ 300V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 500V 4.5A TO-220F |
15,240 |
|
UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 4.5A (Tc) | 10V | 1.55Ohm @ 2.25A, 10V | 5V @ 250µA | 8nC @ 10V | ±30V | 700pF @ 25V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 400V 10.5A TO-220F |
15,000 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 400V | 10.5A (Tc) | 10V | 530mOhm @ 5.25A, 10V | 4V @ 250µA | 35nC @ 10V | ±30V | 1090pF @ 25V | - | 44W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 100V 69A TO220-3 |
7,044 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 69A (Tc) | 4.5V, 10V | 12mOhm @ 69A, 10V | 2.4V @ 83µA | 58nC @ 10V | ±20V | 5600pF @ 50V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Microchip Technology |
MOSFET P-CH 500V 0.054A TO92-3 |
16,368 |
|
- | P-Channel | MOSFET (Metal Oxide) | 500V | 54mA (Tj) | 5V, 10V | 125Ohm @ 10mA, 10V | 4.5V @ 1mA | - | ±20V | 70pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Vishay Siliconix |
MOSFET N-CH 400V 3.1A DPAK |
9,156 |
|
- | N-Channel | MOSFET (Metal Oxide) | 400V | 3.1A (Tc) | 10V | 1.8Ohm @ 1.9A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 350pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 100V 13A DPAK |
18,876 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 13A (Tc) | 10V | 205mOhm @ 7.8A, 10V | 4V @ 250µA | 58nC @ 10V | ±20V | 760pF @ 25V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 60V 14A TO220FP |
7,668 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 14A (Tc) | 10V | 100mOhm @ 8.4A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 640pF @ 25V | - | 37W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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ON Semiconductor |
MOSFET N-CH 60V 30A |
8,928 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Ta) | 4V, 10V | 26mOhm @ 15A, 10V | - | 40nC @ 10V | ±20V | 1780pF @ 20V | - | 2W (Ta), 25W (Tc) | 150°C (TJ) | Through Hole | TO-220F-3SG | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 30V 140A TO-220AB |
16,788 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 140A (Tc) | 4.5V, 10V | 6mOhm @ 71A, 10V | 1V @ 250µA | 140nC @ 4.5V | ±16V | 5000pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 650V 7A TO220 |
8,628 |
|
aMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 650mOhm @ 3.5A, 10V | 4V @ 250µA | 9.2nC @ 10V | ±30V | 434pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 900V 3A TO-220 |
16,632 |
|
SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 900V | 3A (Tc) | 10V | 4.8Ohm @ 1.5A, 10V | 4.5V @ 50µA | 22.7nC @ 10V | ±30V | 590pF @ 25V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 5A D2PAK |
13,356 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 1.4Ohm @ 3A, 10V | 4.5V @ 250µA | 24nC @ 10V | ±30V | 620pF @ 25V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 100V 28A D2PAK |
17,124 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 28A (Tc) | 4V, 5V | 77mOhm @ 17A, 5V | 2V @ 250µA | 64nC @ 5V | ±10V | 2200pF @ 25V | - | 3.7W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 40A TO-220 |
11,868 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 40A (Tc) | 10V | 8.2mOhm @ 20A, 10V | 4V @ 500µA | 49nC @ 10V | ±20V | 3000pF @ 50V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
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Infineon Technologies |
MOSFET N-CH 60V 20A TO220-3 |
13,608 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 20A (Ta), 80A (Tc) | 6V, 10V | 4mOhm @ 80A, 10V | 2.8V @ 50µA | 38nC @ 10V | ±20V | 2700pF @ 30V | - | 3W (Ta), 107W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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|
IXYS |
MOSFET N-CH 75V 70A TO-220 |
7,968 |
|
TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 75V | 70A (Tc) | 10V | 12mOhm @ 25A, 10V | 4V @ 250µA | 46nC @ 10V | ±20V | 2725pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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|
IXYS |
MOSFET N-CH 40V 100A TO-220 |
6,714 |
|
TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 7mOhm @ 25A, 10V | 4V @ 250µA | 25.5nC @ 10V | ±20V | 2690pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 500V 800MA D2PAK |
7,398 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 800mA (Tc) | - | 4.6Ohm @ 400mA, 0V | - | 12.7nC @ 5V | ±20V | 312pF @ 25V | Depletion Mode | 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET P-CH 85V 24A TO-220 |
6,552 |
|
TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 85V | 24A (Tc) | 10V | 65mOhm @ 12A, 10V | 4.5V @ 250µA | 41nC @ 10V | ±15V | 2090pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Texas Instruments |
MOSFET N-CH 60V 100A |
14,268 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Ta) | 6V, 10V | 3.4mOhm @ 25A, 10V | 3.4V @ 250µA | 64nC @ 10V | ±20V | 5340pF @ 30V | - | 3.1W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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IXYS |
MOSFET N-CH 100V 60A TO-220 |
12,876 |
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TrenchMV™ | N-Channel | MOSFET (Metal Oxide) | 100V | 60A (Tc) | 10V | 18mOhm @ 25A, 10V | 4.5V @ 50µA | 49nC @ 10V | ±30V | 2650pF @ 25V | - | 176W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |