晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 358/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXYS |
MOSFET N-CH 75V 340A TO-247 |
3,366 |
|
GigaMOS™, HiPerFET™, TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 75V | 340A (Tc) | 10V | 3.2mOhm @ 100A, 10V | 4V @ 3mA | 300nC @ 10V | ±20V | 19000pF @ 25V | - | 935W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 800V 24A TO-247 |
6,876 |
|
HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 800V | 24A (Tc) | 10V | 400mOhm @ 12A, 10V | 5V @ 4mA | 105nC @ 10V | ±30V | 7200pF @ 25V | - | 650W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS-RF |
MOSFET N-CH 1000V 6A TO247 |
3,348 |
|
HiPerRF™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 6A (Tc) | 10V | 1.9Ohm @ 3A, 10V | 5.5V @ 2.5mA | 54nC @ 10V | ±20V | 1770pF @ 25V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 1000V 6A TO-247AD |
7,506 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 6A (Tc) | 10V | 1.9Ohm @ 3A, 10V | 4.5V @ 2.5mA | 48nC @ 10V | ±20V | 2200pF @ 25V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
|
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|
IXYS |
MOSFET N-CH 300V 88A TO-247 |
7,614 |
|
PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 300V | 88A (Tc) | 10V | 40mOhm @ 44A, 10V | 5V @ 250µA | 180nC @ 10V | ±20V | 6300pF @ 25V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 650V 22A TO-247 |
2,070 |
|
MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 22A (Tc) | 10V | 139mOhm @ 11A, 10V | 5V @ 250µA | 64nC @ 10V | ±25V | 2880pF @ 100V | - | 140W (Tc) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 200V 140A TO-264 |
5,094 |
|
PolarHT™ HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 140A (Tc) | 10V, 15V | 18mOhm @ 70A, 10V | 5V @ 4mA | 240nC @ 10V | ±20V | 7500pF @ 25V | - | 830W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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|
IXYS |
250V/120A ULTRA JUNCTION X3-CLAS |
2,664 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 120A (Tc) | 10V | 12mOhm @ 60A, 10V | 4.5V @ 4mA | 122nC @ 10V | ±20V | 7870pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268HV | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 300V 40A TO-247AD |
8,676 |
|
MegaMOS™ | N-Channel | MOSFET (Metal Oxide) | 300V | 40A (Tc) | 10V | 85mOhm @ 500mA, 10V | 4V @ 250µA | 220nC @ 10V | ±20V | 4600pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 30A TO-247 |
5,148 |
|
Linear L2™ | N-Channel | MOSFET (Metal Oxide) | 500V | 30A (Tc) | 10V | 200mOhm @ 15A, 10V | 4.5V @ 250µA | 240nC @ 10V | ±20V | 8100pF @ 25V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
|
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Infineon Technologies |
MOSFET N-CH 650V 46A TO247-4 |
2,664 |
|
CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 46A (Tc) | 10V | 45mOhm @ 24.9A, 10V | 4V @ 1.25mA | 93nC @ 10V | ±20V | 4340pF @ 400V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247 | TO-247-4 |
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Infineon Technologies |
MOSFET N-CH 600V 50A TO247-4 |
2,898 |
|
CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 600V | 50A (Tc) | 10V | 40mOhm @ 24.9A, 10V | 4V @ 1.24mA | 107nC @ 10V | ±20V | 4340pF @ 400V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
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IXYS |
MOSFET N-CH 500V 64A TO-264 |
5,922 |
|
HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 500V | 64A (Tc) | 10V | 85mOhm @ 32A, 10V | 5.5V @ 8mA | 150nC @ 10V | ±30V | 8700pF @ 25V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 1000V 17A TO-247 |
6,948 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1000V | 17A (Tc) | 10V | 800mOhm @ 9A, 10V | 5V @ 1mA | 150nC @ 10V | ±30V | 4845pF @ 25V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 1200V 14A TO-247 |
4,122 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1200V | 14A (Tc) | 10V | 1.2Ohm @ 7A, 10V | 5V @ 1mA | 145nC @ 10V | ±30V | 4765pF @ 25V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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IXYS |
850V/50A ULTRA JUNCTION X-CLASS |
5,850 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 850V | 50A (Tc) | 10V | 105mOhm @ 500mA, 10V | 5.5V @ 4mA | 152nC @ 10V | ±30V | 4480pF @ 25V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 100V 67A TO247AD |
4,626 |
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MegaMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 67A (Tc) | 10V | 25mOhm @ 33.5A, 10V | 4V @ 4mA | 260nC @ 10V | ±20V | 4500pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 98A TO264 |
8,406 |
|
HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 500V | 98A (Tc) | 10V | 50mOhm @ 500mA, 10V | 5V @ 8mA | 197nC @ 10V | ±30V | 13100pF @ 25V | - | 1300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
850V/50A ULTRA JUNCTION X-CLASS |
4,230 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 850V | 50A (Tc) | 10V | 105mOhm @ 500mA, 10V | 5.5V @ 4mA | 152nC @ 10V | ±30V | 4480pF @ 25V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 650V 100A TO-264 |
5,040 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 650V | 100A (Tc) | 10V | 30mOhm @ 50A, 10V | 5.5V @ 4mA | 180nC @ 10V | ±30V | 11300pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 600V 47A TO-247 |
6,516 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 70mOhm @ 30A, 10V | 3.9V @ 2.7mA | 260nC @ 10V | ±20V | 7015pF @ 25V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 200V 67A D3PAK |
2,178 |
|
POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 200V | 67A (Tc) | 10V | 38mOhm @ 500mA, 10V | 4V @ 1mA | 225nC @ 10V | ±30V | 6120pF @ 25V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3 [S] | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
|
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|
IXYS |
MOSFET P-CH 500V 7A TO-247AD |
6,876 |
|
- | P-Channel | MOSFET (Metal Oxide) | 500V | 7A (Tc) | 10V | 1.5Ohm @ 500mA, 10V | 5V @ 250µA | 130nC @ 10V | ±20V | 3400pF @ 25V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 38A SUPER247 |
2,916 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 38A (Tc) | 10V | 150mOhm @ 23A, 10V | 5V @ 250µA | 320nC @ 10V | ±30V | 7990pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | SUPER-247™ (TO-274AA) | TO-274AA |
|
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IXYS |
MOSFET N-CH 1000V 32A PLUS247 |
5,958 |
|
HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 32A (Tc) | 10V | 320mOhm @ 16A, 10V | 6.5V @ 1mA | 225nC @ 10V | ±30V | 14200pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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Microsemi |
MOSFET N-CH 600V 106A TO-247 |
7,146 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 106A (Tc) | 10V | 35mOhm @ 53A, 10V | 3.5V @ 3.4mA | 308nC @ 10V | ±20V | 8390pF @ 25V | - | 833W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
|
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Microsemi |
MOSFET N-CH 500V 46A TO-264 |
4,392 |
|
POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 500V | 46A (Tc) | 10V | 100mOhm @ 23A, 10V | 5V @ 2.5mA | 95nC @ 10V | ±30V | 4360pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
|
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|
IXYS |
MOSFET N-CH 600V 110A PLUS264 |
8,028 |
|
HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 600V | 110A (Tc) | 10V | 56mOhm @ 55A, 10V | 5V @ 8mA | 245nC @ 10V | ±30V | 18000pF @ 25V | - | 1890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS264™ | TO-264-3, TO-264AA |
|
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Microsemi |
MOSFET N-CH 1000V 32A TO264 |
6,336 |
|
POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 32A (Tc) | 10V | 400mOhm @ 16A, 10V | 5V @ 2.5mA | 260nC @ 10V | ±30V | 8500pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 800V 41A TO-264 |
8,514 |
|
POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 800V | 41A (Tc) | 10V | 240mOhm @ 20A, 10V | 5V @ 2.5mA | 260nC @ 10V | ±30V | 8070pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |