晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 949/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 8TDSON |
4,698 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 60A (Tc) | 10V | 6mOhm @ 30A, 10V | 4V @ 30µA | 33nC @ 10V | ±20V | 2650pF @ 25V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-23 | 8-PowerVDFN |
|
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Infineon Technologies |
MOSFET N-CH 8TDSON |
2,304 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 60A (Tc) | 4.5V, 10V | 5.6mOhm @ 30A, 10V | 2.2V @ 30µA | 43nC @ 10V | ±16V | 3600pF @ 25V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-23 | 8-PowerVDFN |
|
|
|
Infineon Technologies |
MOSFET N-CH 8TDSON |
2,430 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 3.3mOhm @ 40A, 10V | 4V @ 60µA | 71nC @ 10V | ±20V | 5720pF @ 25V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-23 | 8-PowerVDFN |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V 10.1A TO252 |
2,754 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 10.1A (Tc) | 10V | 650mOhm @ 2.1A, 10V | 3.5V @ 0.21mA | 23nC @ 10V | ±20V | 440pF @ 100V | Super Junction | 86W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET P-CH TO262-3 |
4,554 |
|
Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 3.8mOhm @ 100A, 10V | 4V @ 340µA | 205nC @ 10V | ±20V | 14790pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET P-CH TO262-3 |
7,020 |
|
Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 4.5V, 10V | 3.4mOhm @ 100A, 10V | 2.2V @ 340µA | 234nC @ 10V | ±16V | 15000pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH TO262-3 |
6,678 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 72A (Tc) | 10V | 9.4mOhm @ 70A, 10V | 4V @ 120µA | 70nC @ 10V | ±20V | 4810pF @ 25V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET P-CH TO262-3 |
6,588 |
|
Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 10V | 5mOhm @ 80A, 10V | 4V @ 253µA | 130nC @ 10V | ±20V | 10300pF @ 25V | - | 137W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET P-CH TO262-3 |
8,892 |
|
Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 5.2mOhm @ 80A, 10V | 4V @ 250µA | 151nC @ 10V | ±20V | 10300pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET P-CH TO262-3 |
5,382 |
|
Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 7.7mOhm @ 80A, 10V | 4V @ 150µA | 89nC @ 10V | ±20V | 6085pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET P-CH TO262-3 |
6,786 |
|
Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 4.7mOhm @ 80A, 10V | 2.2V @ 250µA | 176nC @ 10V | +5V, -16V | 3800pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET P-CH TO262-3 |
6,444 |
|
Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 6.7mOhm @ 80A, 10V | 2.2V @ 150µA | 104nC @ 10V | +5V, -16V | 6580pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET P-CH TO262-3 |
7,416 |
|
Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 8.2mOhm @ 80A, 10V | 2.2V @ 120µA | 92nC @ 10V | +5V, -16V | 5430pF @ 25V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 8TSON |
3,132 |
|
CoolMOS™ C6 | N-Channel | MOSFET (Metal Oxide) | 600V | 2.3A (Tc) | 10V | 2.1Ohm @ 760mA, 10V | 3.5V @ 60µA | 6.7nC @ 10V | ±20V | 140pF @ 100V | - | 21.6W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | Thin-PAK (5x6) | 8-PowerTDFN |
|
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Infineon Technologies |
MOSFET N-CH 4VSON |
8,586 |
|
CoolMOS™ E6 | N-Channel | MOSFET (Metal Oxide) | 650V | 20.2A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 3.5V @ 700µA | 73nC @ 10V | ±20V | 1620pF @ 100V | - | 151W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
|
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Infineon Technologies |
MOSFET N-CH 4VSON |
8,820 |
|
CoolMOS™ E6 | N-Channel | MOSFET (Metal Oxide) | 650V | 13.1A (Tc) | 10V | 310mOhm @ 4.4A, 10V | 3.5V @ 400µA | 45nC @ 10V | ±20V | 950pF @ 100V | - | 104W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | Thin-Pak (8x8) | 4-PowerTSFN |
|
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Infineon Technologies |
MOSFET N-CH 4VSON |
4,176 |
|
CoolMOS™ E6 | N-Channel | MOSFET (Metal Oxide) | 650V | 10.1A (Tc) | 10V | 420mOhm @ 3.4A, 10V | 3.5V @ 300µA | 39nC @ 10V | ±20V | 710pF @ 100V | - | 83W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | Thin-Pak (8x8) | 4-PowerTSFN |
|
|
|
Infineon Technologies |
MOSFET N-CH 4VSON |
3,672 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 8.3A (Tc) | 10V | 460mOhm @ 3.4A, 10V | 4.5V @ 300µA | 31.5nC @ 10V | ±20V | 870pF @ 100V | - | 83.3W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | Thin-Pak (8x8) | 4-PowerTSFN |
|
|
|
Infineon Technologies |
MOSFET N-CH 4VSON |
5,202 |
|
CoolMOS™ E6 | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 660mOhm @ 2.1A, 10V | 3.5V @ 200µA | 23nC @ 10V | ±20V | 440pF @ 100V | - | 63W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | Thin-Pak (8x8) | 4-PowerTSFN |
|
|
|
Infineon Technologies |
MOSFET N-CH 4VSON |
4,194 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 5.8A (Tc) | 10V | 725mOhm @ 2.1A, 10V | 4.5V @ 200µA | 20nC @ 10V | ±20V | 615pF @ 100V | - | 62.5W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | Thin-Pak (8x8) | 4-PowerTSFN |
|
|
|
Infineon Technologies |
MOSFET N-CH TO220-3 |
7,146 |
|
Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 3.8mOhm @ 100A, 10V | 4V @ 340µA | 205nC @ 10V | ±20V | 14790pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V TO-220-3 |
3,222 |
|
Automotive, AEC-Q101, CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 6A (Tc) | 10V | 660mOhm @ 3.2A, 10V | 4.5V @ 200µA | 20nC @ 10V | ±20V | 543pF @ 100V | - | 62.5W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET P-CH TO220-3 |
8,622 |
|
Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 10V | 5mOhm @ 80A, 10V | 4V @ 253µA | 130nC @ 10V | ±20V | 10300pF @ 25V | - | 137W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET P-CH TO220-3 |
3,996 |
|
Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 7.7mOhm @ 80A, 10V | 4V @ 150µA | 89nC @ 10V | ±20V | 6085pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET P-CH TO220-3 |
3,798 |
|
Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 4.7mOhm @ 80A, 10V | 2.2V @ 250µA | 176nC @ 10V | +5V, -16V | 3800pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET P-CH TO220-3 |
5,958 |
|
Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 6.7mOhm @ 80A, 10V | 2.2V @ 150µA | 104nC @ 10V | +5V, -16V | 6580pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET P-CH TO220-3 |
4,536 |
|
Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 8.2mOhm @ 80A, 10V | 2.2V @ 120µA | 92nC @ 10V | +5V, -16V | 5430pF @ 25V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V TO-251-3 |
2,556 |
|
CoolMOS™ C6 | N-Channel | MOSFET (Metal Oxide) | 600V | 3.2A (Tc) | 10V | 1.4Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4nC @ 10V | ±20V | 200pF @ 100V | - | 28.4W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V TO247-4 |
2,592 |
|
CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 77.5A (Tc) | 10V | 41mOhm @ 35.5A, 10V | 4.5V @ 2.96mA | 170nC @ 10V | ±20V | 8180pF @ 100V | - | 481W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
|
|
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Infineon Technologies |
MOSFET N-CH 600V TO247-4 |
3,400 |
|
CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 37.9A (Tc) | 10V | 99mOhm @ 14.5A, 10V | 4.5V @ 1.21mA | 70nC @ 10V | ±20V | 3330pF @ 100V | - | 219W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |