整流器-數組
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類別半導體 / 二極管與整流器 / 整流器-數組
記錄 11,588
頁面 205/387
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管配置 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io）（每個二極管） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 工作溫度-結點 | 安裝類型 | 包裝/箱 | 供應商設備包裝 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Phoenix Contact |
DIODE MODULE 1.3KV 700MA |
2,322 |
|
- | 7 Common Cathode | Standard | 1300V | 700mA | - | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1300V | -55°C ~ 150°C | DIN Rail/Channel | Module | Module |
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|
Phoenix Contact |
DIODE MODULE 1KV |
4,428 |
|
- | 4 Common Cathode | Standard | 1000V | - | - | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | -20°C ~ 50°C | DIN Rail | Module | Module |
|
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|
Phoenix Contact |
DIODE MODULE 1KV |
4,266 |
|
- | 14 Common Anode | Standard | 1000V | - | - | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | -20°C ~ 50°C | DIN Rail | Module | Module |
|
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|
Infineon Technologies |
DIODE MODULE GP 1600V 25A |
7,794 |
|
- | 3 Independent | Standard | 1600V | 25A (DC) | 1.3V @ 1600A | Standard Recovery >500ns, > 200mA (Io) | - | 5mA @ 1600V | -40°C ~ 150°C | Chassis Mount | Module | Module |
|
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GeneSiC Semiconductor |
DIODE MODULE 100V 120A 2TOWER |
7,128 |
|
- | 1 Pair Common Anode | Schottky | 100V | 120A (DC) | 840mV @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
|
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GeneSiC Semiconductor |
DIODE MODULE 100V 120A 2TOWER |
2,070 |
|
- | 1 Pair Common Cathode | Schottky | 100V | 120A (DC) | 840mV @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
|
|
|
Microsemi |
DIODE MODULE 600V 60A ISOTOP |
6,804 |
|
- | 2 Independent | Silicon Carbide Schottky | 600V | 60A | 1.8V @ 60A | No Recovery Time > 500mA (Io) | 0ns | 1.2mA @ 600V | - | Chassis Mount | SOT-227-4, miniBLOC | ISOTOP® |
|
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Microsemi |
DIODE MODULE 600V 60A SOT227 |
6,138 |
|
- | 2 Independent | Silicon Carbide Schottky | 600V | 60A | 1.8V @ 60A | No Recovery Time > 500mA (Io) | 0ns | 1.2mA @ 600V | - | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 |
|
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|
GeneSiC Semiconductor |
DIODE MODULE 35V 200A 2TOWER |
2,034 |
|
- | 1 Pair Common Cathode | Schottky | 35V | 200A (DC) | 650mV @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | - | 8mA @ 20V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
|
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|
GeneSiC Semiconductor |
DIODE MODULE 80V 200A 2TOWER |
5,436 |
|
- | 1 Pair Common Cathode | Schottky | 80V | 200A (DC) | 840mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
|
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|
GeneSiC Semiconductor |
DIODE MODULE 100V 300A 2TOWER |
8,550 |
|
- | 1 Pair Common Anode | Schottky | 100V | 300A (DC) | 840mV @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | - | 8mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
|
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|
GeneSiC Semiconductor |
DIODE MODULE 20V 300A 2TOWER |
3,096 |
|
- | 1 Pair Common Cathode | Schottky | 20V | 300A (DC) | 650mV @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | - | 8mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
|
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|
GeneSiC Semiconductor |
DIODE MODULE 45V 300A 2TOWER |
127 |
|
- | 1 Pair Common Cathode | Schottky | 45V | 300A (DC) | 650mV @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | - | 8mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
|
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|
GeneSiC Semiconductor |
DIODE MODULE 80V 300A 2TOWER |
2,232 |
|
- | 1 Pair Common Cathode | Schottky | 80V | 300A (DC) | 840mV @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | - | 8mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
|
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|
IXYS |
DIODE MODULE 1.6KV 200A |
7,488 |
|
- | 1 Pair Series Connection | Standard | 1600V | 200A | 1.13V @ 200A | Standard Recovery >500ns, > 200mA (Io) | - | 200µA @ 1600V | - | - | Module | Module |
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GeneSiC Semiconductor |
DIODE MODULE 35V 200A 3TOWER |
8,226 |
|
- | 1 Pair Common Anode | Schottky | 35V | 200A (DC) | 750mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
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|
GeneSiC Semiconductor |
DIODE MODULE 40V 200A 3TOWER |
3,508 |
|
- | 1 Pair Common Anode | Schottky, Reverse Polarity | 40V | 200A (DC) | 750mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
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GeneSiC Semiconductor |
DIODE MODULE 35V 200A 3TOWER |
3,960 |
|
- | 1 Pair Common Cathode | Schottky | 35V | 200A (DC) | 750mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
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|
GeneSiC Semiconductor |
DIODE MODULE 30V 200A 2TOWER |
7,020 |
|
- | 1 Pair Common Cathode | Schottky | 30V | 200A (DC) | 650mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
|
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|
GeneSiC Semiconductor |
DIODE MODULE 30V 200A 2TOWER |
3,780 |
|
- | 1 Pair Common Anode | Schottky | 30V | 200A (DC) | 650mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
|
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GeneSiC Semiconductor |
DIODE MODULE 20V 200A 2TOWER |
2,250 |
|
- | 1 Pair Common Cathode | Schottky | 20V | 200A (DC) | 650mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
|
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GeneSiC Semiconductor |
DIODE MODULE 20V 200A 2TOWER |
3,330 |
|
- | 1 Pair Common Anode | Schottky | 20V | 200A (DC) | 650mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
|
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|
GeneSiC Semiconductor |
DIODE MODULE 35V 200A 2TOWER |
2,178 |
|
- | 1 Pair Common Cathode | Schottky | 35V | 200A (DC) | 650mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
|
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|
GeneSiC Semiconductor |
DIODE MODULE 35V 200A 2TOWER |
8,604 |
|
- | 1 Pair Common Anode | Schottky | 35V | 200A (DC) | 650mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
|
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GeneSiC Semiconductor |
DIODE MODULE 40V 200A 2TOWER |
6,552 |
|
- | 1 Pair Common Cathode | Schottky | 40V | 200A (DC) | 650mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
|
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|
GeneSiC Semiconductor |
DIODE MODULE 40V 200A 2TOWER |
3,006 |
|
- | 1 Pair Common Anode | Schottky | 40V | 200A (DC) | 650mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
|
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|
GeneSiC Semiconductor |
DIODE MODULE 45V 200A 2TOWER |
7,470 |
|
- | 1 Pair Common Anode | Schottky | 45V | 200A (DC) | 650mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
|
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|
GeneSiC Semiconductor |
DIODE MODULE 80V 200A 2TOWER |
7,758 |
|
- | 1 Pair Common Anode | Schottky | 80V | 200A (DC) | 840mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
|
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GeneSiC Semiconductor |
DIODE MODULE 100V 200A 3TOWER |
4,122 |
|
- | 1 Pair Common Anode | Schottky, Reverse Polarity | 100V | 200A (DC) | 880mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 20V 200A 3TOWER |
6,138 |
|
- | 1 Pair Common Cathode | Schottky | 20V | 200A (DC) | 750mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |